HfO2 films with high laser damage threshold

Laser damage of silica and hafnia thin films made with different deposition technologies

“…1,3,6,15 In our study however, we observe that the dense layers (obtained with ion-assisted process) exhibit a very good threshold in the infrared (DIBS) and the UV (IAD) compared with layers manufactured by classical EBD. This indicate that a good quality in terms of defects has been obtained for these dense layers.…”

“…[4][5][6][7][8] But these last techniques have better optical, mechanical and environmental properties. The improvement of the laser damage resistance of dense layers has therefore a considerable interest for the community.…”

Deposition of HfO2 Films by Liquid Injection MOCVD Using a New Monomeric Alkoxide Precursor, [Hf(dmop)4]

“…Hafnium dioxide (HfO 2 ) has a number of important potential applications in gas sensing devices, [1] tunnel junctions, [2] optical coatings, [3] and thin film capacitors. [4] HfO 2 has a high permittivity (k), and is relatively stable in contact with silicon making it a promising material to replace SiO 2 as the gate dielectric insulating layer in sub-0.1 lm complementary metal-oxide-semiconductor (CMOS) devices.…”

“…[10] Although the fluorinated complex [Hf(tfac) 4 ] is more volatile, [11] the presence of fluorine can lead to etching of the silicon substrate. The metal nitrate complex [Hf(NO 3 ) 4 ] has been used for the MOCVD of high purity HfO 2 at low growth temperatures, [12] but anhydrous metal nitrate complexes are hazardous, highly reactive oxidants. Metal alkylamide complexes, such as [Hf(NMe 2 ) 4 ] [13,14] and [Hf(NEt 2 ) 4 ], [13] have also been used for the MOCVD of HfO 2 , but they are highly air-sensitive, and varying amounts of residual nitrogen and carbon can be incorporated in the oxide film.…”

Laser-induced damage threshold of ZrO2 thin films prepared at different oxygen partial pressures by electron-beam evaporation

“…[1][2][3] However, the problem of laser induced damage of ZrO 2 films has not yet been solved, and further study is required to elucidate the factors that influence on the laser damage resistance. The laser-induced damage thresholds (LIDTs) depend on different factors for various layer-forming materials, coating processes, deposition parameters, etc., [4][5][6][7] and the oxygen partial pressure is one of the important deposition parameters relate to the LIDT of the oxide coatings. The influence of the oxygen partial pressure on LIDT of Ta 2 O 5 films prepared by reactive radio frequency sputtering method was studied by Hacker et al 8 Demiryont et al 9 had investigated the oxygen threshold for ion-beam sputter deposited oxide coatings like SiO 2 , TiO 2 , and Ta 2 O 5 .…”