2015
DOI: 10.1063/1.4929773
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HgCdTe e-avalanche photodiode detector arrays

Abstract: Initial results on the MWIR e-APD detector arrays with 30 μm pitch fabricated on LPE grown compositionally graded p-HgCdTe epilayers are presented. High dynamic resistance times active area (R0A) product 2 × 106 Ω-cm2, low dark current density 4 nA/cm2 and high gain 5500 at -8 V were achieved in the n+-υ-p+ HgCdTe e-APD at 80 K. LPE based HgCdTe e-APD development makes this technology amenable for adoption in the foundries established for the conventional HgCdTe photovoltaic detector arrays without any additio… Show more

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Cited by 9 publications
(5 citation statements)
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“…These conditions are met by HgCdTe since the bandgap can be tuned to the particular requirement. HgCdTe APDs show a close to linear exponential gain up to M ~ 1000 with very low excess noise, close to F ( M ) ~ 1 [ 4 , 5 , 6 , 7 , 8 , 9 , 10 , 11 ] in short-wave (SWIR) mid-wave infrared (MWIR) to long-wave infrared (LWIR) covering niche strategic applications from 1.3 μm to 16 μm. Asymmetry between the effective mass of electron in the conduction band and heavy hole results in the unequal ionization coefficient for electron and hole in HgCdTe material.…”
Section: Introductionmentioning
confidence: 78%
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“…These conditions are met by HgCdTe since the bandgap can be tuned to the particular requirement. HgCdTe APDs show a close to linear exponential gain up to M ~ 1000 with very low excess noise, close to F ( M ) ~ 1 [ 4 , 5 , 6 , 7 , 8 , 9 , 10 , 11 ] in short-wave (SWIR) mid-wave infrared (MWIR) to long-wave infrared (LWIR) covering niche strategic applications from 1.3 μm to 16 μm. Asymmetry between the effective mass of electron in the conduction band and heavy hole results in the unequal ionization coefficient for electron and hole in HgCdTe material.…”
Section: Introductionmentioning
confidence: 78%
“…In addition, HgCdTe based APD operates at a low reverse bias to achieve large internal gain ( M ) with low excess noise factor [ F ( M )] rather than III-V material based APD. However, the highest performance is obtained at low cryogenic temperatures ( T = 77 K) [ 4 , 5 , 6 , 7 , 8 , 9 , 10 , 11 ].…”
Section: Introductionmentioning
confidence: 99%
“…HgCdTe Infrared Focal Plane Array (IRFPA) detectors have been widely used in infrared night vision, remote sensing, sky observation and environmental monitoring, etc [1][2][3][4][5][6][7] . With the development of IRFPA detector technology, the number of pixels has increased from a few hundred to several million.…”
Section: Introductionmentioning
confidence: 99%
“…These disturbing effects can be avoided, in part, by employing graded alloy compositions. Here, the capability to produce nanostructures with intentional composition gradings is a particular strength of the LPE, facilitating the fine-tuning of the electronic properties together with a significant increase in the crystal quality.…”
Section: Introductionmentioning
confidence: 99%