HgCdTe Growth on 6 cm × 6 cm CdZnTe Substrates for Large-Format Dual-Band Infrared Focal-Plane Arrays

Reddy, M. Muralidhar; Peterson, Jeffrey M.; Lofgreen, D. D.; Vang, T.; Patten, E. A.; Radford, W. A.; Johnson, S. M.

doi:10.1007/s11664-010-1141-4

Cited by 12 publications

(7 citation statements)

References 10 publications

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“…In 1985, Rogalski A. and Larkowski W. proposed p-on-n configuration [38], shown in Figure 3c, and demonstrated its advantage of operating at high temperature. A series of configurations based on p-on-n configuration have been proposed and manufactured, such as double-layer heterojunction (DLHJ) [54] and double-layer planar heterostructure (DLPH) [55]. In the 1990s, the third generation of photodetectors focused on very large FPAs.…”

Section: Hg X Cd 1−x Te Mwir and Lwir Photodetectormentioning

confidence: 99%

Recent Progress in Improving the Performance of Infrared Photodetectors via Optical Field Manipulations

Chen

Wang

et al. 2022

Sensors

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Benefiting from the inherent capacity for detecting longer wavelengths inaccessible to human eyes, infrared photodetectors have found numerous applications in both military and daily life, such as individual combat weapons, automatic driving sensors and night-vision devices. However, the imperfect material growth and incomplete device manufacturing impose an inevitable restriction on the further improvement of infrared photodetectors. The advent of artificial microstructures, especially metasurfaces, featuring with strong light field enhancement and multifunctional properties in manipulating the light–matter interactions on subwavelength scale, have promised great potential in overcoming the bottlenecks faced by conventional infrared detectors. Additionally, metasurfaces exhibit versatile and flexible integration with existing detection semiconductors. In this paper, we start with a review of conventionally bulky and recently emerging two-dimensional material-based infrared photodetectors, i.e., InGaAs, HgCdTe, graphene, transition metal dichalcogenides and black phosphorus devices. As to the challenges the detectors are facing, we further discuss the recent progress on the metasurfaces integrated on the photodetectors and demonstrate their role in improving device performance. All information provided in this paper aims to open a new way to boost high-performance infrared photodetectors.

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Section: Hg X Cd 1−x Te Mwir and Lwir Photodetectormentioning

confidence: 99%

Recent Progress in Improving the Performance of Infrared Photodetectors via Optical Field Manipulations

Chen

Wang

et al. 2022

Sensors

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“…[9] It is observed that HgCdSe alloy is nearly lattice matched to GaSb substrate, which is a high-quality III-V substrate with features of larger wafer size (up to 6 inches in diameter), lower wafer cost, and higher crystal quality (etch pit density as low as < 10 3 cm −2 ). [3,6] Considering that the lattice mismatch between HgCdSe layer and GaSb substrate is only around 0.4%, the ultimate dislocation density in HgCdSe layers grown on GaSb should be below the level of 10 5 cm −2 , which will be comparable to that in HgCdTe grown on latticematched CdZnTe substrates, [10] and thus be suitable for making high-performance infrared detectors. In the meantime, as shown in Fig.…”

Section: Hgcdse Infrared Materials and Detectorsmentioning

confidence: 99%

A review on MBE-grown HgCdSe infrared materials on GaSb (211)B substrates

Zhang¹,

Pan²,

Liu³

et al. 2019

Chinese Phys. B

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We review our recent efforts on developing HgCdSe infrared materials on GaSb substrates via molecular beam epitaxy (MBE) for fabricating next generation infrared detectors with features of lower production cost and larger focal plane array format size. In order to achieve high-quality HgCdSe epilayers, ZnTe buffer layers are grown before growing HgCdSe, and the study of misfit strain in ZnTe buffer layers shows that the thickness of ZnTe buffer layer needs to be below 300 nm in order to minimize the generation of misfit dislocations. The cut-off wavelength/alloy composition of HgCdSe materials can be varied in a wide range by varying the ratio of Se/Cd beam equivalent pressure during the HgCdSe growth. Growth temperature presents significant impact on the material quality of HgCdSe, and lower growth temperature leads to higher material quality for HgCdSe. Typically, long-wave infrared HgCdSe (x = 0.18, cut-off wavelength of 10.4 µm at 80 K) presents an electron mobility as high as 1.3×10 5 cm 2 •V −1 •s −1 , a background electron concentration as low as 1.6×10 16 cm −3 , and a minority carrier lifetime as long as 2.2 µs. These values of electron mobility and minority carrier lifetime represent a significant improvement on previous studies of MBE-grown HgCdSe reported in the open literatures, and are comparable to those of counterpart HgCdTe materials grown on lattice-matched CdZnTe substrates. These results indicate that HgCdSe grown at the University of Western Australia, especially long-wave infrared can meet the basic material quality requirements for making high performance infrared detectors although further effort is required to control the background electron concentration to below 10 15 cm −3 . More importantly, even higher quality HgCdSe materials on GaSb are expected by further optimizing the growth conditions, using higher purity Se source material, and implementing postgrowth thermal annealing and defect/impurity gettering/filtering. Our results demonstrate the great potential of HgCdSe infrared materials grown on GaSb substrates for fabricating next generation infrared detectors with features of lower cost and larger array format size.

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“…17 and 18 that both FPAs show some of the highest pixel operabilities and low cluster outages. 8,10 Improved composition uniformity on these wafers helped achieve higher operability by minimizing the variability in pixel k c and the associated dark current variations 11 across the FPAs. Further, the low cluster outages in these FPAs can be attributed to the low density of relatively larger defects (size >30 lm) on these wafers.…”

Section: Hgcdte On Cdzntementioning

confidence: 99%

Molecular Beam Epitaxy Growth of HgCdTe on Large-Area Si and CdZnTe Substrates

Reddy

Peterson

Vang

et al. 2011

Journal of Elec Materi

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This paper presents the status of HgCdTe growth on large-area Si and CdZnTe substrates at Raytheon Vision Systems (RVS). The different technological tools that were used to scale up the growth from 4 inch to 6 inch diameter on Si and from 4 cm 9 4 cm to 8 cm 9 8 cm on CdZnTe without sacrificing the quality of the layers are described. Extremely high compositional uniformity and low macrodefect density were achieved for single-and two-color HgCdTe layers on both Si and CdZnTe substrates. Finally, a few examples of detector and focal-plane array results are included to highlight the importance of high compositional uniformity and uniformly low macrodefect density of the epitaxial layers in obtaining high operability and low cluster outages in single-and two-color focal-plane arrays (FPAs).

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HgCdTe Growth on 6 cm × 6 cm CdZnTe Substrates for Large-Format Dual-Band Infrared Focal-Plane Arrays

Cited by 12 publications

References 10 publications

Recent Progress in Improving the Performance of Infrared Photodetectors via Optical Field Manipulations

Recent Progress in Improving the Performance of Infrared Photodetectors via Optical Field Manipulations

A review on MBE-grown HgCdSe infrared materials on GaSb (211)B substrates

Molecular Beam Epitaxy Growth of HgCdTe on Large-Area Si and CdZnTe Substrates

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