High- and Reproducible-Performance Graphene/II-VI Semiconductor Film Hybrid Photodetectors

Abstract

High- and reproducible-performance photodetectors are critical to the development of many technologies, which mainly include one-dimensional (1D) nanostructure based and film based photodetectors. The former suffer from a huge performance variation because the performance is quite sensitive to the synthesis microenvironment of 1D nanostructure. Herein, we show that the graphene/semiconductor film hybrid photodetectors not only possess a high performance but also have a reproducible performance. As a demo, the as-produced graphene/ZnS film hybrid photodetector shows a high responsivity of 1.7 × 107 A/W and a fast response speed of 50 ms, and shows a highly reproducible performance, in terms of narrow distribution of photocurrent (38–65 μA) and response speed (40–60 ms) for 20 devices. Graphene/ZnSe film and graphene/CdSe film hybrid photodetectors fabricated by this method also show a high and reproducible performance. The general method is compatible with the conventional planar process, and would be easily standardized and thus pay a way for the photodetector applications.

Plasmon-enhanced reduced graphene oxide photodetector with monometallic of Au and Ag nanoparticles at VIS–NIR region

“… 0.14 µs and 0.09 µs (Ag NPs PD), 0.17 µs and 0.11 µs (Au NPs PD). Huang Fan et al 34 produced all type of devices with narrow distribution for photocurrent and response time, suggesting that semiconductor film with fixed amount of photo-generated carriers and uniform charge transfer behaviour at semiconductor-graphene interface. This indicates the potential for standardizing the production of high- and reproducible-performance graphene/semiconductor film hybrid photodetectors.…”

2D Materials for Efficient Photodetection: Overview, Mechanisms, Performance and UV-IR Range Applications

“…The device responsivity of photodetectors can be improved by graphene-based hybridization in their fabrications. For instance, responsivity of three graphene-based photodetectors made by hybridization of ZnS, ZnSe, and CdSe nanosheets were reported as 1.7 × 10 7 , 3.9 × 10 6 , and 2.3 × 10 6 AW −1 , respectively ( Huang et al, 2016 ). From these measured values, we can confirm actual enhancement of the responsivity.…”

Visible photodetector based on transition metal-doped ZnO NRs/PEDOT:PSS hybrid materials

“…Most of the main materials in PDs are direct bandgap materials such as silicon and II-VI semiconductors. 11 Photodetectors are applied in many elds in practical life such as optical communication, biomedical imaging, security, environmental sensing, safety, optical sensors, hot engine ame detection, leak detection, and motion detection. 12 In optical sensor applications, metal oxide nanostructures are emerging as potential semiconductors for active materials in photodetectors due to their excellent optical properties.…”

“…Most of the main materials in PDs are direct bandgap materials such as silicon and II–VI semiconductors. 11 Photodetectors are applied in many fields in practical life such as optical communication, biomedical imaging, security, environmental sensing, safety, optical sensors, hot engine flame detection, leak detection, and motion detection. 12 …”