High Aspect Ratio Sub‐15 nm Silicon Trenches From Block Copolymer Templates

Gu, Xiaodan; Liu, Zuwei; Gunkel, Ilja; Chourou, Slim; Hong, Sung Woo; Olynick, Deirdre L.; Russell, Thomas P.

doi:10.1002/adma.201202361

Cited by 82 publications

(83 citation statements)

References 29 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Reconstruction in a selective solvent is a convenient way of obtaining a porous polymer template of PS-b-PEO BCP. The use of ethanol, a good solvent for PEO but a bad solvent for PS, allows for fabrication of a hexagonally packed porous polymer template of PS-b-PEO [74]. In another study, it was shown that HI acid cleaves the PEO domains in PS-b-PEO, producing porous PS templates [75].…”

Section: (A) Ps-b-pi and Ps-b-pbmentioning

confidence: 99%

“…For example, Gu et al [74] used a solvent-annealed and reconstructed PS-b-PEO mask to pattern high-aspect-ratio silicon holes using SF 6 and O 2 lowtemperature RIE (etch recipe: flow rate 34 sccm SF 6 and 16 sccm O 2 , RF power 1000 W, 10 mTorr pressure and a temperature of −120 • C). The low-temperature etching was used to condense a passivation layer on the sidewall of the silicon, which allows an almost vertical etch profile.…”

Section: (A) Ps-b-pi and Ps-b-pbmentioning

confidence: 99%

“…An etching selectivity up to 8 : 1 was obtained between the organic mask and the silicon wafer. A hexagonally packed array of 20 nm silicon holes was etched into the silicon substrate to a depth of 60 nm [74]. Moreover, other patterning methods were used related to PS-b-PEO porous templates.…”

Section: (A) Ps-b-pi and Ps-b-pbmentioning

confidence: 99%

See 2 more Smart Citations

Pattern transfer using block copolymers

Gunkel

Russell

2013

Phil. Trans. R. Soc. A.

Self Cite

View full text Add to dashboard Cite

To meet the increasing demand for patterning smaller feature sizes, a lithography technique is required with the ability to pattern sub-20 nm features. While top-down photolithography is approaching its limit in the continued drive to meet Moore's law, the use of directed self-assembly (DSA) of block copolymers (BCPs) offers a promising route to meet this challenge in achieving nanometre feature sizes. Recent developments in BCP lithography and in the DSA of BCPs are reviewed. While tremendous advances have been made in this field, there are still hurdles that need to be overcome to realize the full potential of BCPs and their actual use.

show abstract

Section: (A) Ps-b-pi and Ps-b-pbmentioning

confidence: 99%

Section: (A) Ps-b-pi and Ps-b-pbmentioning

confidence: 99%

See 1 more Smart Citation

Pattern transfer using block copolymers

Gunkel

Russell

2013

Phil. Trans. R. Soc. A.

Self Cite

View full text Add to dashboard Cite

show abstract

“…[27] However, the pattern transfer of the cylindrical phase system is extremely challenging because of the distribution of one block in a matrix of the other and the small diameter of the cylinders which results in poor etch selectivity and shape control. [28][29][30] The pattern transfer performance is generally judged by etch rate, selectivity, uniformity, directionality, etched surface quality and reproducibility. Dielectric materials (SiO2, Al2O3 and Si3N4 etc.…”

Section: Introductionmentioning

confidence: 99%

Development of a facile block copolymer method for creating hard mask patterns integrated into semiconductor manufacturing

et al. 2016

View full text Add to dashboard Cite

Original citationGhoshal, T., Shaw, M. T., Holmes, J. D. and Morris, M. A. (2016) 'Development of a facile block copolymer method for creating hard mask patterns integrated into semiconductor manufacturing', NanoResearch, 9(10), pp. ABSTRACT:The aim here is the development of a facile process to create patterns of inorganic oxides and metals on a substrate that can act as hard masks within a lithographic process. These materials should have high etch contrast (to silicon) and so allow high aspect, high fidelity pattern transfer whilst being readily integrate-able in modern semiconductor fabrication (FAB friendly). Here, we show that ultra-small dimension hard masks can be used to develop large areas of densely packed vertically and horizontally orientated Si nanowire arrays. The inorganic and metal hard masks (Ni, NiO and ZnO) of different morphologies and dimensions were formed using microphase separated polystyrene-b-poly(ethylene oxide) (PSb-PEO) block copolymer (BCP) thin films though the variation of BCP molecular weight and the annealing conditions such as temperature, solvent/s etc.. The self-assembled polymer patterns were solvent processed and metal ions included into chosen domains via a selective inclusion method and subsequent inorganic oxide nanopatterns were developed using standard techniques. It is shown by high resolution transmission electron microscopy studies that high aspect pattern transfer could be affected by standard plasma etch techniques. The masking ability of the different materials was compared in order to create the highest quality uniform and smooth sidewall profile of the Si nanowire arrays. Notably, good performance of metal mask was seen and this could impact the use of these materials at small dimension where conventional methods are severely limited.

show abstract

“…Some periodic nanostructures of Si and SiO2 have been successfully fabricated with this technology in recent years [15][16][17]. Despite the numerous advantages and fruitful achievements of patterning nanostructures offered by the self-assembly, there are some challenges to restrict the patterning transfer of block copolymer patterns to various substrate materials.…”

Section: Introductionmentioning

confidence: 99%

CMOS-Compatible Top-Down Fabrication of Periodic SiO2 Nanostructures using a Single Mask

Meng¹,

Gao²,

He³

et al. 2016

Nano Online

View full text Add to dashboard Cite

(http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.We propose a CMOS-compatible top-down fabrication technique of highly-ordered and periodic SiO2 nanostructures using a single amorphous silicon (α-Si) mask layer. The α-Si mask pattern is precisely transferred into the underlying SiO2 substrate material with a high fidelity by a novel top-down fabrication. It is the first time for α-Si film used as an etch mask to fabricate SiO2 nanostructures including nanoline, nanotrench, and nanohole arrays. It is observed that the α-Si mask can significantly reduce the pattern edge roughness and achieve highly uniform and smooth sidewalls. This behavior may be attributed to the presence of high concentration of dangling bonds in α-Si mask surface. By controlling the process condition, it is possible to achieve a desired vertical etched profile with a controlled size. Our results demonstrate that SiO2 pattern as small as sub-20 nm may be achievable. The obtained SiO2 pattern can be further used as a nanotemplate to produce periodic or more complex silicon nanostructures. Moreover, this novel top-down approach is a potentially universal method that is fully compatible with the currently existing Si-based CMOS technologies. It offers a greater flexibility for the fabrication of various nanoscale devices in a simple and efficient way.

show abstract

High Aspect Ratio Sub‐15 nm Silicon Trenches From Block Copolymer Templates

Cited by 82 publications

References 29 publications

Pattern transfer using block copolymers

Pattern transfer using block copolymers

Development of a facile block copolymer method for creating hard mask patterns integrated into semiconductor manufacturing

CMOS-Compatible Top-Down Fabrication of Periodic SiO2 Nanostructures using a Single Mask

Contact Info

Product

Resources

About