High bandwidth planar InP/InGaAs avalanche photodiodes

Ekholm, D. T.; Geary, J.; Hollenhorst, J. N.; Mattera, V. D.; Pawelek, R.

doi:10.1109/16.8843

Cited by 9 publications

(3 citation statements)

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“…The generation term is written as (7) where is the photogenerated current density per unit length in the layer under consideration. Since these equations are linear, the currents on the left and right sides of the layer can be related through the use of a transfer matrix as follows: (8) or in shorthand . The subscript refers to the current density on left side of the layer and the subscript refers to the right side.…”

Section: Modelsmentioning

confidence: 99%

Performance of thin separate absorption, charge, and multiplication avalanche photodiodes

Anselm

Nie

et al. 1998

IEEE J. Quantum Electron.

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Abstract-Previously, it has been demonstrated that resonantcavity-enhanced separate-absorption-and-multiplication (SAM) avalanche photodiodes (APD's) can achieve high bandwidths and high gain-bandwidth products while maintaining good quantum efficiency. In this paper, we describe a GaAs-based resonant-cavity-enhanced SAM APD that utilizes a thin charge layer for improved control of the electric field profile. These devices have shown RC-limited bandwidths above 30 GHz at low gains and gain-bandwidth products as high as 290 GHz. In order to gain insight into the performance of these APD's, homojunction APD's with thin multiplication regions were studied. It was found that the gain and noise have a dependence on the width of the multiplication region that is not predicted by conventional models. Calculations using width-dependent ionization coefficients provide good fits to the measured results. These calculations indicate that the gain-bandwidth product depends strongly on the charge layer doping and on the multiplication layer thickness and, further, that even higher gain-bandwidth products can be achieved with optimized structures.

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Section: Modelsmentioning

confidence: 99%

Performance of thin separate absorption, charge, and multiplication avalanche photodiodes

Anselm

Nie

et al. 1998

IEEE J. Quantum Electron.

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“…1. This is an example with considerable practical importance [ 11, [3], [4], [8], [9], [lo]. Light is incident from the bottom and is absorbed in the InGaAs absorption layer of thickness I,.…”

Section: Sam-apdmentioning

confidence: 99%

“…1. This is an InGaAs/InP separated absorption and multiplication avalance photodiode (SAM-APD) [4]. We are interested in the response to light injected from the bottom of the device.…”

Section: Introductionmentioning

confidence: 99%

Frequency response theory for multilayer photodiodes

Hollenhorst

1990

J. Lightwave Technol.

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An exact solution is developed for the frequency response of photodiodes composed of multiple spatially uniform layers. Each layer is analyzed separately to obtain a set of linear response coefficients. The response of the multilayer diodes is calculated using matrix algebra. Effects of carrier transit, electron and hole tapping, avalanche decay, and finite absorption length are included in the analysis. The results of Emmons and Lucovsky for APD's and p-i-n's are obtained as special cases. The theory is illustrated by applying it to the separated absorption and multiplication avalance photodiode.

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Heterojunction Photodetectors for Optical Communications

Campbell

1994

VLSI Electronics Microstructure Science

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High bandwidth planar InP/InGaAs avalanche photodiodes

Cited by 9 publications

References 0 publications

Performance of thin separate absorption, charge, and multiplication avalanche photodiodes

Performance of thin separate absorption, charge, and multiplication avalanche photodiodes

Frequency response theory for multilayer photodiodes

Heterojunction Photodetectors for Optical Communications

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