High-breakdown-voltage pn-junction diodes on GaN substrates

Formation of definite GaN p–n junction by Mg-ion implantation to n−-GaN epitaxial layers grown on a high-quality free-standing GaN substrate

“…Gallium Nitride (GaN) is suited for applications in high power, high frequency, and high temperature devices, because GaN has a wide band gap, a high breakdown electric field, a high saturation-drift velocity for electrons, and high thermal conductivity [1]. A selective area doping technology, which is frequently used in processing Si and SiC devices, is required for making high performance GaN devices.…”

Over 3.0 $\hbox{GW/cm}^{2}$ Figure-of-Merit GaN p-n Junction Diodes on Free-Standing GaN Substrates

“…The defects are mainly composed of high-density threading dislocations (over 10 9 /cm 2 ) and cause crucial leakages of current. Thus, a homoepitaxial structure on a free-standing GaN substrate is advantageous in achieving a higher breakdown voltage and lower specific ON-resistance [1], [2].…”

The low leakage current in floating body GaN metal oxide semiconductor field effect transistors

“…Yoshizumi et al also confirmed J R in the GaN-based pn-junction diode was dependent on the number of TDs, where J R for the case of freestanding GaN substrates (TD density $3 Â 10 6 /cm 2 ) was overwhelmingly smaller J R for the case of sapphire substrates (TD density $3 Â 10 8 /cm 2 ) [15]. Because DV p is determined by leakage currents as derived in this paper, additional leakage currents (e.g., current caused by TDs) break our framework for discussion.…”