High compositional homogeneity in In-rich InGaAs nanowire arrays on nanoimprinted SiO<sub>2</sub>/Si (111)

Hertenberger, Simon; Funk, Stefan; Vizbaras, Kristijonas; Yadav, Anandi; Rudolph, Daniel; Becker, Jonathan; Bolte, S.; Döblinger, Markus; Bichler, Max; Scarpa, Giuseppe; Lugli, Paolo; Zardo, Ilaria; Finley, Jonathan J.; Amann, Markus‐Christian; Abstreiter, G.; Koblmüller, Gregor

doi:10.1063/1.4738769

Cited by 60 publications

(71 citation statements)

References 20 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…For such integrated photonics applications, we note that the emission wavelength must also be shifted further into the infrared, for example, by replacing the GaAs core with InGaAs. Recently, promising first results have been obtained showing that InGaAs NWs with very high uniformity can be grown site selectively on Si and their composition can be tuned over large ranges 42 . This provides significant prospects to extend the emission wavelength into the telecommunications window and beyond for which NW lasing could be obtained providing that Auger losses, which are more significant at longer wavelengths, can be overcome.…”

Section: Discussionmentioning

confidence: 99%

Lasing from individual GaAs-AlGaAs core-shell nanowires up to room temperature

et al. 2013

View full text Add to dashboard Cite

Semiconductor nanowires are widely considered to be the next frontier in the drive towards ultra-small, highly efficient coherent light sources. While NW lasers in the visible and ultraviolet have been widely demonstrated, the major role of surface and Auger recombination has hindered their development in the near infrared. Here we report infrared lasing up to room temperature from individual core-shell GaAs-AlGaAs nanowires. When subject to pulsed optical excitation, NWs exhibit lasing, characterized by single-mode emission at 10 K with a linewidth o60 GHz. The major role of non-radiative surface recombination is obviated by the presence of an AlGaAs shell around the GaAs-active region. Remarkably low threshold pump power densities down to B760 W cm À 2 are observed at 10 K, with a characteristic temperature of T 0 ¼ 109 ± 12 K and lasing operation up to room temperature. Our results show that, by carefully designing the materials composition profile, high-performance infrared NW lasers can be realised using III/V semiconductors.

show abstract

Section: Discussionmentioning

confidence: 99%

Lasing from individual GaAs-AlGaAs core-shell nanowires up to room temperature

et al. 2013

View full text Add to dashboard Cite

show abstract

“…The catalyst-free technique has been heavily explored for MOVPE growth of III-V NWs, including GaAs, GaP, InAs and InP [82]. Recently, this technique has also been extended to MBE growth of GaAs [83], InAs [84][85][86][87], InGaAs [88,89], and InAsP [90] NWs.…”

Section: Nw Growth Mechanismsmentioning

confidence: 99%

Position-Controlled Uniform GaAs Nanowires on Silicon using Nanoimprint Lithography

et al. 2014

View full text Add to dashboard Cite

This thesis deals with the growth of GaAs nanowires (NWs) by molecular beam epitaxy (MBE) using vapor-liquid-solid method on various substrates including GaAs(111)B, Si(111) and graphene. The growth of the NWs on GaAs substrates was carried out by Au-catalyzed technique, whereas the growths on Si and graphene substrates were carried out using self-catalyzed technique that has been the main focus of this thesis. The long-term goal of this work was to produce p-n radial junction GaAs NWs for solar cell applications.Necessary conditions were established for obtaining vertical self-catalyzed GaAs NWs on Si(111), which is reproducible from run-to-run. One of the major issues in these NWs grown by both Au-and self-catalyzed techniques is their crystal structure. The Au-catalyzed GaAs NWs usually adopt a wurtzite (WZ) crystal phase, whereas the self-catalyzed NWs a zinc blende (ZB) phase. However, in both the cases the NWs contain stacking faults, rotational twins or/and a mixed crystal phase. The ZB and WZ phases show different optical properties, and one phase might be favored over other for certain applications. Therefore the crystal phase was controlled within single NWs by tuning the V/III ratio and introducing GaAsSb inserts. The change of the crystal phases was correlated with the change in the contact angle of the Ga droplet.Since the discovery of graphene, an ultra-thin two-dimensional material, the research on graphene has become an active field in recent years due to its remarkable properties including excellent electrical and thermal conductivities, mechanical strength and flexibility, and optical transparency. By growing the semiconductor NWs on graphene, a completely new hybrid system can be envisioned where the unique properties of both NWs and graphene can be utilized. Therefore we established a method for the growth of semiconductor NWs on graphene by demonstrating epitaxial growth of vertical GaAs and InAs NWs on different graphitic substrates.Core-shell heterostructure, doping, optical properties, and position controlled growth of self-catalyzed GaAs NWs were investigated. Growth of GaAs/GaAsSb coreshell NWs where the Sb content was tuned from about 10% -70% was studied. The effect of growth temperature and the Sb flux on the morphology of GaAsSb shell was investigated. In addition, by utilizing the core-shell geometry where the shell copies the crystal phase of the core, WZ phase of GaAsSb was demonstrated. Successful p-type doping of GaAs core using Be as dopant, and n-type doping of GaAs shell using Si and Te as dopants were achieved. To investigate the optical properties, GaAs/AlGaAs coreshell NWs were grown with different V/III ratios during the core growth. The NWs grown with high V/III ratio, despite containing a higher density of twinned ZB and WZ GaAs with SFs, were found to have superior optical quality as compared to the NWs grown with low V/III ratio that contain pure ZB GaAs. The observed V/III ratio dependent optical quality was correlated to the intrinsic defects such as As vac...

show abstract

“…32. High-resolution XRD spectra of InGaAs NWs grown by SAG method showed narrow full-width-at-half-maximum width over wide indium content range [163]. The composition uniformity of the SAG grown NWs is also studied by EDS, and STEM carefully [156].…”

Section: Science China Materialsmentioning

confidence: 99%

“…This strongly indicates that there is a large dispersion in NW length, diameter, and composition fluctuations over the as-grown ensemble NWs [149]. Therefore, a catalyst-free, site-selective growth NWs arrays on a substrate with pre-patterned masks, i.e., selective area growth (SAG), became an ideal solution to achieve the high quality InGaAs NWs with uniform composition over the sample [19,163]. The template SiO 2 masks were defined by either EBL or nanoimprint lithography, and etched by wet etching or sputtering deposition.…”

Section: Science China Materialsmentioning

confidence: 99%

Growth of III-V semiconductor nanowires and their heterostructures

Zou

Han

2016

Sci. China Mater.

View full text Add to dashboard Cite

introduced by Wagner and Ellis in the 1960's to grow Si submicrosize whiskers [2]. Although Si nanowires are useful, particular their easy incorporation with mature Si technology, which makes products cheap and suitable for mass production, the indirect band gap of Si is hindering the application of this material in many fields where direct band gap is essential, such as optoelectronics. In this regard, III-V compound semiconductors are dominating due to their direct band gap and flexibility in band gap and lattice engineering. In the early 1990s, Scientists from Hitachi employed the VLS approach to grow III-V nanowires [3,4]. At that time, good position and orientation control was achieved as well as the demonstration of the first p-n junctions based on heterostructured nanowires [5]. These novel one-dimensional (1D) III-V nanostructures provide a good model system for investigating the dependence of electronic transport, optical, and mechanical properties on their confinement effects. They demonstrated the potential of these nanowires in the next-generation integrated circuits and functional devices, such as field-effect transistors [6−8], single-electron transistors [9], light-emitting devices [10], chemical sensors [11−14], and THz detectors [15].The control of NW growth is considered to be one of the key points and the foundation of successful NW-based device fabrication. The benefit of NWs is that due to their small radial dimension and the large aspect ratio, the strain in axial heterostructures induced by the lattice mismatch can be relaxed within a small region close to the interface. Therefore, there is virtually no limitation in the choice of materials by the requirement of lattice-matching.Another benefit of III-V semiconductor NWs is that by carefully choosing substrates, the growth of NWs can be self-assembled, and as-grown epitaxial NWs are free-standing. Additionally, by employing nanoscale lithography techniques, e.g., electron beam lithography, it is possible to realize the growth of NWs on pre-patterned substrates [16−20].ABSTRACT In this paper, we present a review about recent progress on the growth of III-V semiconductor homo-and heterostructured nanowires. We will first deliver a general discussion on the crystal structure and the conventional growth mechanism of one dimensional nanowires. Then we provide a review about most widely used growth techniques, sample preparation and the cutting edge characterization techniques including advanced electron microscopy, in situ electron diffraction, micro-Raman spectroscopy, and atom probe tomography. In the end, the growth of different heteostructured III-V semiconductor nanowires will be reviewed. We will focus on the morphology dependence, temperature influence, and III/ V flux ratio dependent growth. The perspective and an outlook of this field is discussed in order to foresee the future of the fundamental research and application of these one dimensional nanostructures.

show abstract

High compositional homogeneity in In-rich InGaAs nanowire arrays on nanoimprinted SiO₂/Si (111)

Cited by 60 publications

References 20 publications

Lasing from individual GaAs-AlGaAs core-shell nanowires up to room temperature

Lasing from individual GaAs-AlGaAs core-shell nanowires up to room temperature

Position-Controlled Uniform GaAs Nanowires on Silicon using Nanoimprint Lithography

Growth of III-V semiconductor nanowires and their heterostructures

Contact Info

Product

Resources

About

High compositional homogeneity in In-rich InGaAs nanowire arrays on nanoimprinted SiO2/Si (111)

Cited by 60 publications

References 20 publications

Lasing from individual GaAs-AlGaAs core-shell nanowires up to room temperature

Lasing from individual GaAs-AlGaAs core-shell nanowires up to room temperature

Position-Controlled Uniform GaAs Nanowires on Silicon using Nanoimprint Lithography

Growth of III-V semiconductor nanowires and their heterostructures

Contact Info

Product

Resources

About

High compositional homogeneity in In-rich InGaAs nanowire arrays on nanoimprinted SiO₂/Si (111)