High-Density Optical Disk Mastering Using Multilayer Coating Method

Umezawa, Takeshi; Sugiyama, Ikuto; Fujii, Eiichi; Kaseya, Hiroyasu; Yamada, Hideaki

doi:10.1143/jjap.41.1709

Cited by 5 publications

(2 citation statements)

References 7 publications

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“…Pattern resolution would decrease accordingly. 23) The size of the pattern is shown to be a function of the extinction coefficient (k) value when the exposure power is kept at a constant level. Among the GSS23-A-C samples, the developed groove pattern in the GSS23-A sample demonstrates the clearest pattern edge with a smooth groove wall, as shown by the AFM image in Fig.…”

Section: Optimized Exposure and Development Processmentioning

confidence: 99%

“…To obtain marks with a large depth and clear edges, the pattern formed by etching crystalline and noncrystalline structures of Ge-Sb-Sn also needs to be clearly differentiated by gaining distinguishable dissolution rates between the two states. 23) This can be achieved by adjusting the optical absorption of the phase change layer for laser irradiation. In this study, we modulate the Ge-Sb-Sn-O inorganic resist film by sputtering with a Ge-Sb-Sn target under Ar/O 2 atmosphere.…”

Section: Introductionmentioning

confidence: 99%

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Optimization of Ge–Sb–Sn–O Films for Thermal Lithography of Submicron Structures

Chen

Lin

Chen

et al. 2012

Jpn. J. Appl. Phys.

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Ge-Sb-Sn inorganic resist materials are developed to fabricate submicron structures that have a pattern size smaller than 150 nm and a depth over 100 nm via thermal lithography. The materials are sputtered under Ar:O 2 atmospheres by varying O 2 flow rate and Ge level. Both increasing O 2 flow rate and Ge level can decrease the extinction coefficient, k , at 405 nm wavelength to within a range of 0.58-0.89. Films with appropriate absorption of laser power are chosen to optimize exposure and development processes. A continuous 2.0 mW laser power is used to crystallize the Ge-Sb-Sn-O films. 175-nm-wide and 107-nm-deep grooves are formed after development using alkaline solutions. The 175 nm width is well below half of the 380 nm diffraction limit. A laser pulse strategy is also developed to fabricate discrete dot patterns. By shortening the write 1 time to 0.5 T (7.8 ns), the dot patterns change from oval to round shape. A pit pattern as small as 140 nm diameter and 100 nm depth is achieved.

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Section: Optimized Exposure and Development Processmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%