High-dose helium-implanted single-crystal silicon: Annealing behavior

Abstract

Articles you may be interested inOptical models for cavity profiles in high-dose helium-implanted and annealed silicon measured by ellipsometry

Vacancy Cluster Distributions in He Implanted Silicon Studied by Slow Positron Annihilation Spectroscopy

“…At the annealing temperature of 700°C there is the appearance of the first cavities (Sd = 1.0112) confirmed by TEM measurements. From this annealing temperature the smaller clusters (V4* , V6 * ) d i s a p p e a r a n d t h e He depletion is complete around 800°C [3]. The formation of cavities is activated by the He detrapping from big agglomerates but the increase in the size of cavities is also due to migration and coalescence of open volume defects [2].…”

“…Two series were treated isothermally at 250°C in the 2 min -24 h time range. By Monte-Carlo simulation the He projected range ΔRp w a s f o u n d t o b e a b o u t 2 3 0 n m w i t h a s t r a g g l i n g ΔR p of 85 nm [3].…”

“…Recently, the subject was systematically investigated with several techniques applied at samples implanted at a He fluence below (5 x 10 15 cm -2 ) and above (2 x 10 16 cm -2 ) the threshold for cavities formation. Information about the evolution of He and of the displaced silicon atoms distributions was obtained by elastic recoil detection (ERD) and Rutherford backscattering in channelling (RBS-C) [3,4]. Thermal programmed desorption (TPD) [5] was employed to obtain information about thermodynamics and kinetics quantity.…”

Roles of local He concentration and Si sample orientation on cavity growth in amorphous silicon

“…Crucial phenomena, i.e. He desorption [5] and transition of He-related defects from platelets to bubbles/cavities [6], occur during annealing at temperatures between 400°C and 600°C. In multi He + implanted samples in the keV range the cavity size starts changing at 700°C [7] until an equilibrium distribution is reached at 800°C-900°C [6].…”

“…He desorption [5] and transition of He-related defects from platelets to bubbles/cavities [6], occur during annealing at temperatures between 400°C and 600°C. In multi He + implanted samples in the keV range the cavity size starts changing at 700°C [7] until an equilibrium distribution is reached at 800°C-900°C [6]. A more recent model [8] predicts 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 F o r P e e r R e v i e w O n l y 3 formation of nano-sized voids during rapid thermal processes in as grown Si wafers.…”