High-efficiency 35-GHz GaAs MESFET's

Taylor, G.; Eron, M.; Bechtle, D.; Liu, Shing-Gong; Camisa, R.L.

doi:10.1109/t-ed.1987.23079

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Implant Limitation1

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1988

1993

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Cited by 3 publications

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“…Finally, the confined retrograde active N layer improves the linearity of the amplifier. This hybrid profile is similar to but removes the E Z I v I inherent limit from our all-implanted microwave power MESFET [6]. Thus it provides a thicker N÷ layer and a well-defined and controlled low-high retrograde doping for recessed gate and channel.…”

Section: Implant Limitationmentioning

confidence: 87%

Buried-shallow-implant (Bsi) process for High Efficiency Microwave power Mesfets

Liu

Capewell

1988

MRS Proc.

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We present a hybrid implant-epitaxy process that alleviates the inherent depth-width-dependent limitation of ion implantation. This technique allows shallow implants, which produce a thin active N layer with a controlled doping gradient, to be buried at an arbitrary depth below the less-critical, epitaxiallygrown surface layer. The formation and characteristics of GaAs buriedshallow-implant (BSI) layers for microwave power FETs will be discussed.

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Section: Implant Limitationmentioning

confidence: 87%