High Efficiency 5W/10W 32 - 38GHz Power Amplifier MMICs Utilizing Advanced 0.15µm GaN HEMT Technology

Chen, Shuoqi; Nayak, Sabyasachi; Campbell, Carol; Reese, E.

doi:10.1109/csics.2016.7751040

Cited by 25 publications

(18 citation statements)

References 3 publications

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“…In the passive load‐pull system, limited by the tuning region in Ka‐band and the test precision in high gamma, the direct load‐pull measurement on unit power cell of 4 × 70 μm is not ideal. An alternative method is introduced to prematch unit FET cell first, and then de‐embeds the load‐pull data of prematched FET cell to acquire the output impedance of 4 × 70 μm FET cell as shown in Figure . The conjugate output impedance of unit power cell and designed load impedance (ZL) are shown in Figure .…”

Section: Circuit Designmentioning

confidence: 99%

“… Microphotograph of pre‐matched transistor of 4 × 70 μm. [Color figure can be viewed at http://wileyonlinelibrary.com]…”

Section: Circuit Designmentioning

confidence: 99%

“… MU stability coefficient and MSG/MAG of unit FET cell of 4 × 70 μm with (symbol lines) and without (solid lines) stability circuit. [Color figure can be viewed at http://wileyonlinelibrary.com]…”

Section: Circuit Designmentioning

confidence: 99%

“…The high output power and high power added efficiency (PAE) are important in these systems, which can effectively improve the system's output power and reduce the cost of heat dissipation. Recently, published papers show steady progress in improving the efficiency and the output power of GaN based Ka‐band power amplifier MMIC . However, there are few reports for GaN HPA MMIC in 33–37 GHz and detailed design approach yet.…”

Section: Introductionmentioning

confidence: 99%

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High efficiency 33–37 GHz 20 W GaN HEMT power amplifier MMIC

Tao

Wang

Zhang³

et al. 2017

Micro & Optical Tech Letters

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A high efficiency Ka‐band GaN high power amplifier (HPA) utilizing 0.15‐μm gallium nitride (GaN) high electron mobility transistor (HEMT) technology is presented in this letter. The MMIC is designed with load‐pull method, with the final stage matched to compromise between output power and power added efficiency (PAE). An output power of more than 43 dBm and a power added efficiency of more than 30% over the band of 33–37 GHz under a drain voltage of 24 V at 100 μs pulse‐width and 10% duty‐cycle have been achieved. The chip size is 2.8 mm × 3.4 mm (9.52 mm2).

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Section: Circuit Designmentioning

confidence: 99%

“… Microphotograph of pre‐matched transistor of 4 × 70 μm. [Color figure can be viewed at http://wileyonlinelibrary.com]…”

Section: Circuit Designmentioning

confidence: 99%

Section: Circuit Designmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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High efficiency 33–37 GHz 20 W GaN HEMT power amplifier MMIC

Tao

Wang

Zhang³

et al. 2017

Micro & Optical Tech Letters

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“…Many works has been reported as given in Refs. , all of these works are based on GaN/SiC technology. GaN/SiC technology has good thermal conductivity but the substrate cost is high.…”

Section: Introductionmentioning

confidence: 99%

23.5‐30 GHz gallium nitride on silicon power amplifier MMIC with 7.6‐12.4 W saturation output power

Tong

Zhang

Peng

et al. 2019

Micro & Optical Tech Letters

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A 23.5‐30 GHz power amplifier (PA) using 0.1‐μm gallium nitride (GaN) on silicon (Si) microwave monolithic integrated circuit (MMIC) process is presented in this work. The area of this PA MMIC is 3.7 mm × 3.2 mm (11.8 mm2). The measured linear gain is 16.4‐19.4 dB with input/output return loss over 10 dB. The measured saturation output power (Psat) is 7.6‐12.4 W under pulsed working condition. The drain voltage is 12 V and the total drain current is 2.6 A, which induce a power added efficiency (PAE) of 26%‐37%. The reported GaN on Si (GaN/Si) PA has high power, high efficiency and low cost. It is more suitable for massive commercial application compared with the traditional GaN on silicon‐carbon (GaN/SiC) PA. As we know, there has been no high output power GaN/Si PA as high as 10 W level reported in the 20‐30 GHz frequency region.

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GaN‐Based HEMTs for Millimeter‐wave Applications

Harrouche

Medjdoub

2020

Nitride Semiconductor Technology

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High Efficiency 5W/10W 32 - 38GHz Power Amplifier MMICs Utilizing Advanced 0.15µm GaN HEMT Technology

Cited by 25 publications

References 3 publications

High efficiency 33–37 GHz 20 W GaN HEMT power amplifier MMIC

High efficiency 33–37 GHz 20 W GaN HEMT power amplifier MMIC

23.5‐30 GHz gallium nitride on silicon power amplifier MMIC with 7.6‐12.4 W saturation output power

GaN‐Based HEMTs for Millimeter‐wave Applications

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