High-efficiency InGaN MQW blue and green LEDs

Lester, S. D.; Ludowise, M. J.; Killeen, Kevin; Perez, B.H; Miller, J. N.; Rosner, S. J.

doi:10.1016/s0022-0248(98)00294-2

Cited by 47 publications

(17 citation statements)

References 1 publication

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…In recent years, remarkable progress in the technology of bright blue-green AlGaInN light emitting diodes (LEDs) and laser diodes has been achieved [1] [2]. The active region of these LEDs with either single-or multiple-quantum well structure are created from doped and undoped InGaN films.…”

Section: Introductionmentioning

confidence: 99%

Heterostructure for UV LEDs Based on Thick AlGaN Layers

Sakharov

Lundin

Usikov

et al. 1998

MRS Internet j. nitride semicond. res.

View full text Add to dashboard Cite

Thick AlGaN layers and GaN/AlGaN heterostructures were grown by low pressure MOCVD on (0001) sapphire substrates utilizing a low temperature AlGaN buffer layer. The distribution of Al in the thick AlGaN layers was observed to be non-uniform as a function of depth. The Al content gradually increases from the substrate towards the epilayer surface. Moreover, fluctuations of Al content are also noticeable. The saturation of impurity-related emission with increasing current density was observed in EL spectra of LEDs consisting of AlGaN/GaN/AlGaN DH sandwiched by a 2 µ m-thick bottom layer of GaN:Si and 0.5 µ m-thick layer of GaN:Mg. The dominant near-band edge emission of the GaN active layer was found to be strongly absorbed in the thick bottom layer. Utilizing a 2 µ m-thick AlGaN bottom layer instead of the GaN one allowed the absorption edge to be shifted towards higher energies. A single peak at 362 nm with FWHM of 14 nm was observed in this type of LED. Luminescence properties of various types of heterostructures are also discussed.

show abstract

Section: Introductionmentioning

confidence: 99%

Heterostructure for UV LEDs Based on Thick AlGaN Layers

Sakharov

Lundin

Usikov

et al. 1998

MRS Internet j. nitride semicond. res.

View full text Add to dashboard Cite

show abstract

“…1. The growth time of the well layer is 195 s. Figure 1(a) shows that MQW is well grown without any defect generation [2]. In Fig.…”

Section: Resultsmentioning

confidence: 99%

Evaluation of wavelength shifts of green and blue light emitting diodes with InN/GaN multiple quantum wells

Kim

Lee

Hong

2006

Phys. Status Solidi (c)

View full text Add to dashboard Cite

InN/GaN multiple quantum wells were grown by metalorganic chemical vapor deposition. The structural and electrical properties were characterized by transmission electron microscopy and electroluminescence measurements. From the transmission electron micrographs, it was shown that the well layer was grown like a quantum dot. The well layer is expected to be the nano-size structures in the InN multiple quantum well layers. The multi-photon confocal laser scanning microscopy was used to investigate the optical properties of the light emitting diode structures with InN active layers. It was found that the two-photon excitation was possible in InN system. The pit density was measured by using the far-field optical technique. In the varied current conditions, the blue light emitting diode with the InN multiple quantum well structures did not have the wavelength shift. With this result, we can expect that the white light emitting diodes with the InN multiple quantum well structures do not show the color temperature changes with the variations of applied currents.

show abstract

“…GaN-based light-emitting diodes (LEDs) have become a potential alternative to conventional light sources due to their high energy-efficiency, high reliability, long life-time, high colour rendering index, good performance even during frequent on-off cycles, environmental friendliness and resistance to thermal and vibrational shocks [1][2][3][4][5][6][7]. LEDs are widely being used in various applications like lighting, backlight modules in liquid crystal displays, architecture decoration, traffic signals etc.…”

Section: Introductionmentioning

confidence: 99%