High efficiency LDMOS power FET for low voltage wireless communications

Ma, G.; Burger, W.; Dragon, C.; Gillenwater, Todd

doi:10.1109/iedm.1996.553129

Cited by 29 publications

(8 citation statements)

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“…Because of the low breakdown voltages for fast CMOS devices, other technologies, such as GaAs HBT [26], [27], Si bipolar [28], [29], SiGe HBT [30]- [32], and low-voltage LDMOS [33], [34], have so far dominated the small-size PAs. See [35] for CMOS vs. GaAs comparison for mobile phone PAs, and [36] for comparison of different bipolar technologies for similar applications.…”

Section: A Cmos For Wireless Socmentioning

confidence: 99%

A Review of Watt-Level CMOS RF Power Amplifiers

Johansson

Fritzin

2014

IEEE Trans. Microwave Theory Techn.

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Abstract-This paper reviews the design of watt-level integrated CMOS RF power amplifiers (PAs) and state-of-the-art results in the literature. To reach watt-level output power from a single-chip CMOS PA, two main strategies can be identified: use of high supply voltage, and use of matching and power combination. High supply voltage limits are closely related to device design in the fabrication process. However, the maximum operating voltage can be improved by amplifier class selection, circuit solutions, and process modifications or mask changes. High output power can also be reached by the use of on-chip matching and power combination, commonly using on-chip transformers. Reliability often sets the limits for the PA design, and PA degradation mechanisms are reviewed. A compilation of state-of-the-art published results for linear and switched wattlevel PAs, as well as a few fully integrated CMOS PAs, is presented and discussed.

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Section: A Cmos For Wireless Socmentioning

confidence: 99%

A Review of Watt-Level CMOS RF Power Amplifiers

Johansson

Fritzin

2014

IEEE Trans. Microwave Theory Techn.

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“…There is an increasing interest in using several types of silicon MOSFETs (CMOS, SOI, LDMOS, etc.) in analog RF applications in the 0.5 GHz to 2.5 GHz frequency band (8,9). For microwave applications, compound semiconductor materials, in particular gallium arsenide, are preferred.…”

Section: Microwave and Millimeter Wave Transistorsmentioning

confidence: 99%

Microwave Solid State Devices

Schreurs

1999

Wiley Encyclopedia of Electrical and Electronics Engineering

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“…Such features are adverse to RF performance although favorable for breakdown characteristics, thus making the devices less suitable for higher frequency applications. Ma et al [9] and Qu et al [10] incorporated a silicided gate into LDMOS, while left the source-drain unsilicided. Matsumoto et al [11] employed a single oxide sidewall to define the drift length and form a salicide.…”

Section: Introductionmentioning

confidence: 99%

A Short-Channel SOI RF Power LDMOS Technology With$hboxTiSi_2$Salicide on Dual Sidewalls With Cutoff Frequency$f_T sim hbox19.3 hboxGHz$

Yang

et al. 2006

IEEE Electron Device Lett.

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In this letter, a CMOS-compatible silicon-oninsulator (SOI) RF laterally diffused MOS (LDMOS) technology is proposed based on TiSi 2 salicide with SiO 2 /Si 3 N 4 dual sidewalls. The use of dual sidewalls yields a large process margin for defining drift regions and preventing source-gate silicide bridging. This technology improves the cutoff frequencies and the maximum oscillation frequencies by 27%-42% and 14%-22%, respectively, for a gate length in the range of 0.5-0.25 µm. For the shortest 0.25-µm gate length, a record cutoff frequency of 19.3 GHz and a high breakdown voltage of 16.3 V are achieved simultaneously for SOI RF LDMOS. This LDMOS technology is suitable for 3.6-V-supply 0-3-GHz power RFIC applications. Index Terms-Breakdown voltage (BV), cutoff frequency f T , laterally diffused MOS (LDMOS), maximum oscillation frequency f max , RF, salicide.

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High efficiency LDMOS power FET for low voltage wireless communications

Cited by 29 publications

References 0 publications

A Review of Watt-Level CMOS RF Power Amplifiers

A Review of Watt-Level CMOS RF Power Amplifiers

Microwave Solid State Devices

A Short-Channel SOI RF Power LDMOS Technology With$hboxTiSi_2$Salicide on Dual Sidewalls With Cutoff Frequency$f_T sim hbox19.3 hboxGHz$

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