High Efficiency Multi-busbar Solar Cells and Modules

Braun, Stefan; Nissler, Robin; Ebert, Christian; Habermann, D.; Hahn, Giso

doi:10.1109/jphotov.2013.2286525

Cited by 24 publications

(10 citation statements)

References 7 publications

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“…Indeed, this method has been employed in photovoltaic cells, where metallic busbars are deposited on the front contact of the cells. 46,47 Photocurrent improvements on 50 cm 2 BiVO 4 photoelectrodes have also been demonstrated by depositing conducting nickel lines on top of the FTO substrates. 21 Decreasing d contact to less than 1 cm will further reduce V ohmic,substrate .…”

Section: Voltage Losses In the Substratesmentioning

confidence: 97%

Mitigating voltage losses in photoelectrochemical cell scale-up

Abdi

Perez

Haussener

2020

Sustainable Energy Fuels

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Section: Voltage Losses In the Substratesmentioning

confidence: 97%

Mitigating voltage losses in photoelectrochemical cell scale-up

Abdi

Perez

Haussener

2020

Sustainable Energy Fuels

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“…4, the optimized emitter can also be transferred to novel multibusbar solar cell designs [16]. According to the initial results, efficiencies > 19.5% may be achieved.…”

Section: P-precipitationmentioning

confidence: 99%

Towards an optimized emitter for screen-printed solar cells

Dastgheib-Shirazi

Micard

Wagner³

et al. 2013

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) PART 2

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-The determination of suitable process parameters for POCl 3 diffusion, with the aim of minimizing emitter recombination and obtaining satisfactory contactability of the homogeneous emitter, is the aim of this study. It can be shown that different emitters with low R sheet < 60 Ω/sq can result in significantly different emitter saturation current densities. Regarding the screen-printing metallization procedure, we observe that the resistance of a semiconductor-metal contact can vary on different emitters despite of the same sheet resistance.In this study, the relevant process parameters for emitter optimization using POCl 3 -diffusion were determined with the help of a design of experiment (DoE). Thus, it is also possible to find optimized diffusion parameters without increasing the sheet resistance of the optimized emitter. To verify the efficiency potential of the emitter, a standard industrial solar cell process is applied, and the outcome is compared with results from simulations using Sentaurus Device. A significant increase in efficiency can be reached, with open circuit voltages >640 mV and average efficiencies well above 19%.

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“…Another way to achieve a more reliable Cu plating process is to remove the complication of having busbars on the cells by using a wire‐based cell interconnection method . As mentioned earlier in this section, the presence of busbars as well as fingers in the grid pattern can result in a non‐uniform plating rate across the cell that can be difficult to control .…”

Section: Challenges For Copper‐plated Silicon Solar Cellsmentioning

confidence: 99%

Challenges facing copper‐plated metallisation for silicon photovoltaics: Insights from integrated circuit technology development

Lennon

Colwell

Rodbell

2018

Progress in Photovoltaics

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Copper‐plated interconnects were widely adopted for volume manufacture of integrated circuits after more than a decade of intensive research to demonstrate that use of Cu would not impact device reliability. However, although Cu‐plated metallisation promises significantly reduced costs for Si photovoltaics, its adoption in manufacturing has not gained the same traction. This review identifies some key challenges facing the introduction of Cu‐plated metallisation for Si photovoltaics. These include the following: (1) increased carrier recombination due to the use of Cu for metal contact formation; (2) reduced module reliability due to adhesion or contact integrity failures; and (3) limited availability of cost‐effective processes and equipment for metal plating. For integrated circuits, Cu's low electrical resistance and high resistance to electromigration provided an impetus for the large investment in process development that was required to realise Cu‐plated interconnects. However, the technical advantages of using Cu for Si solar cell contacts are not as compelling, as solar cells can tolerate larger feature sizes thus reducing the criticality of the contact metal's conductivity and electromigration properties. Additionally, for Si photovoltaics, low cost is paramount, and new challenges arise from the need for modules to absorb light and operate in the field for 25+ years in diverse outdoor climates. However, with the scale of Si photovoltaic manufacturing expected to increase dramatically in the next decade, the use of large quantities of silver for cell metallisation will provide an incentive to address reliability concerns regarding the use of Cu for Si photovoltaic metallisation.

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High Efficiency Multi-busbar Solar Cells and Modules

Cited by 24 publications

References 7 publications

Mitigating voltage losses in photoelectrochemical cell scale-up

Mitigating voltage losses in photoelectrochemical cell scale-up

Towards an optimized emitter for screen-printed solar cells

Challenges facing copper‐plated metallisation for silicon photovoltaics: Insights from integrated circuit technology development

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