2019
DOI: 10.1016/j.apsusc.2019.02.106
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High-efficiency nitrene-based crosslinking agent for robust dielectric layers and high-performance solution-processed organic field-effect transistors

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Cited by 16 publications
(12 citation statements)
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“…[ 34 ] Au NPs were introduced through the thermal evaporation at the interface between the previously reported solution‐based crosslinked polystyrene (PS) with the FPA crosslinker. [ 35 ] The crosslinked printed polymeric dielectrics (FMBHSt and FMBHCa) were applied to the memory devices to minimize the adverse influence of the fabrication of charge storage layers. As shown in the AFM image in Figure 7b, a small amount of Au thermal evaporation (2 nm) induces the deposition of distributed AuNPs (with a diameter of ≈20 nm) on the polymeric layers.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…[ 34 ] Au NPs were introduced through the thermal evaporation at the interface between the previously reported solution‐based crosslinked polystyrene (PS) with the FPA crosslinker. [ 35 ] The crosslinked printed polymeric dielectrics (FMBHSt and FMBHCa) were applied to the memory devices to minimize the adverse influence of the fabrication of charge storage layers. As shown in the AFM image in Figure 7b, a small amount of Au thermal evaporation (2 nm) induces the deposition of distributed AuNPs (with a diameter of ≈20 nm) on the polymeric layers.…”
Section: Resultsmentioning
confidence: 99%
“…To fabricate the floating gate memory devices, a PS (Sigma‐Aldrich) and FPA blend solution was prepared, [ 35 ] spin coated onto the gate/polymeric dielectric deposited substrates, and subsequently crosslinked under deep UV irradiation to form crosslinked thin FPS layers. The Au layer (2 nm) was then thermally deposited through thermal evaporation to form Au NPs.…”
Section: Methodsmentioning
confidence: 99%
“…The water contact angle and surface energy of the FAGPTi film were 105° and 29.53 mJ m −2 , respectively (shown in the inset of Figure 2b; Table S1, Supporting Information), which are comparable to conventional polymeric dielectrics. [ 7c,27 ] The smooth and hydrophobic surface can eliminate the trapping sites for mobile carriers, [ 5 ] which can enhance the reliability and stability of the devices. The 1D‐XRD data also confirm that the FAGPTi film has a homogeneous and amorphous surface that induces isotropic dielectric properties and can eliminate disorderly dipoles owing to the crystallinity of the oxide (Figure 2c).…”
Section: Resultsmentioning
confidence: 99%
“…For example, the bisazide ethylene glycol bis(4-azido-2,3,5,6tetrafluorobenzoate) (FPA) allows crosslinking of polymers with high efficiency and is readily photopatterned by deep UV and a shadow mask. It was used to produce a chemically robust dielectric film based on PS that provided a favorable environment for growth of a triethylsilylethynyl--anthradithiophene (TES-ADT) semiconductor film, yielding OFETs with much higher field-effect mobility than those with plain PS layers [72]. The sterically hindered bis(fluorophenyl azide) sFPA (Figure 4), was used to fabricate a photo-patterned poly(9,9dioctylfluorene-alt-benzothiadiazole) (F8BT) film.…”
Section: Multilayered and Photopatternable Ofets And Organic Light-emmentioning
confidence: 99%