High efficiency selective emitter enabled through patterned ion implantation

Low, R.J.; Gupta, Atul; Gossmann, Hans‐Joachim L.; Mullin, J. P.; Yelundur, Vijay; Damiani, Ben; Chandrasekaran, V.; Meier, D.L.; McPherson, Bruce P.; Rohatgi, A.

doi:10.1109/pvsc.2011.6186328

Cited by 9 publications

(7 citation statements)

References 18 publications

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“…There are various techniques and applications to form selective emitter structures [48]. Double-diffusion with masking [49,50], selective diffusion barrier process [51], oxide masking process and etch back [45,52], implantation process [53] are among these techniques. Depending on the technique, need of laser ablation, additional steps like masking, repeated diffusions, etch back processes are among the drawbacks of such techniques.…”

Section: Selectively Screen-printing and Single Diffusion Processmentioning

confidence: 99%

Non-Vacuum Process for Production of Crystalline Silicon Solar Cells

Üzüm¹,

Ito²,

Dhamrin³

et al. 2017

New Research on Silicon - Structure, Properties, Technology

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Existing technologies for conventional high-efficient solar cells consist of vacuum-processed, high cost, sophisticated, and potentially hazardous techniques (POCl 3 diffusion, SiNx deposition, etc.) during crystalline silicon solar cell manufacturing. Alternative research studies of non-vacuum and cost-efficient processes for crystalline silicon solar cells are in continuous demand. However, there is not a well understanding of utilizing schemes and the achievable performances for such applications and techniques in solar cell fabrication. This chapter addresses the non-vacuum processes and applications for crystalline silicon solar cells. Such processes including spin coating and screen-printing phosphorus and boron diffusions for the formation of n+ and p+ emitter or back surface fields, spin coating and spray-deposited antireflection coatings for silicon solar cells. Application techniques were explained by combining and comparing experimental results with the calculation and simulations. Consequently, the aim of this chapter is to provide a good understanding of the non-vacuum processes for crystalline solar cells both with simulation and with experimental proves.

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Section: Selectively Screen-printing and Single Diffusion Processmentioning

confidence: 99%

Non-Vacuum Process for Production of Crystalline Silicon Solar Cells

Üzüm¹,

Ito²,

Dhamrin³

et al. 2017

New Research on Silicon - Structure, Properties, Technology

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“…The formation of the emitters using an ion implantation technique requires quite low ion doses for a short time in comparison to other doping techniques. The ion implantation can be useful for industrial applications as it offers certain benefits which are demonstrated well in [ 62 ]. The most important one is the formation of an accurate doping profile with a uniformly doped emitter.…”

Section: Ion Implanted Emitter Cellsmentioning

confidence: 99%

“…The fabrication of advanced cell structures (i.e., selective emitters) can be simplified by using the ion implantation process. The comfort and ease of cell processing with benefits such as reductions in process steps, improved blue response, edge isolation elimination, and a uniformly doped emitter can be formed by this ion implantation process [ 62 ]. Sunvia Inc. working in collaboration with Varian Semiconductor Equipment Associates (VSEA) [ 66 ] and the Georgia Institute of Technology has pioneered the ion-implantation technology.…”

Section: Ion Implanted Emitter Cellsmentioning

confidence: 99%

Advancements in n‐Type Base Crystalline Silicon Solar Cells and Their Emergence in the Photovoltaic Industry

Rehman

Lee

2013

The Scientific World Journal

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The p-type crystalline silicon wafers have occupied most of the solar cell market today. However, modules made with n-type crystalline silicon wafers are actually the most efficient modules up to date. This is because the material properties offered by n-type crystalline silicon substrates are suitable for higher efficiencies. Properties such as the absence of boron-oxygen related defects and a greater tolerance to key metal impurities by n-type crystalline silicon substrates are major factors that underline the efficiency of n-type crystalline silicon wafer modules. The bi-facial design of n-type cells with good rear-side electronic and optical properties on an industrial scale can be shaped as well. Furthermore, the development in the industrialization of solar cell designs based on n-type crystalline silicon substrates also highlights its boost in the contributions to the photovoltaic industry. In this paper, a review of various solar cell structures that can be realized on n-type crystalline silicon substrates will be given. Moreover, the current standing of solar cell technology based on n-type substrates and its contribution in photovoltaic industry will also be discussed.

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“…7 Some of these single-side doping techniques are already used in high-efficiency n-type solar cells. 8,9 Among these techniques, this paper focuses on ion implantation, which presents other advantages as the possibility of local doping thanks to an in situ masking 10 that can strongly simplify the process flow of selective emitters and IBC cells, the ability to easily and precisely control the dopant concentration and distribution as well as the high uniformity and reproducibility of the doping. 11 In addition, very high-emitter quality has been reported using a beamline ion implantation (BLII) of B + ions, with emitter saturation current densities (J 0e ) lower than 40 fA/cm 2 , 12 along with promising PV conversion efficiencies up to 21.8% with screen-printed n-PERT cells.…”

Section: Introductionmentioning

confidence: 99%

Plasma‐immersion ion implantation: A path to lower the annealing temperature of implanted boron emitters and simplify PERT solar cell processing

Lanterne

Desrues

Lorfeuvre

et al. 2019

Progress in Photovoltaics

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Ion implantation is a suitable and promising solution for the massive industrialization of boron doping, which is a crucial process step for most next‐generation solar cells based on crystalline silicon (c‐Si). However, the use of ion implantation for boron doping is limited by the high temperature (in the 1050°C range) of the subsequent activation anneal, which is essential to dissolve the boron clusters and reach a high‐emitter quality. In this work, we propose the use of plasma‐immersion ion implantation (PIII) from B2H6 gas precursor instead of the standard beamline ion implantation (BLII) technique to decrease this temperature down to 950°C. PIII and BLII boron emitters were compared with annealing temperatures ranging from 950°C to 1050°C. Contrary to BLII, no degradation of the emitter quality was observed with PIII implants annealed at 950°C along with a full activation of the dopants in the emitter. At 1000°C, emitter saturation current densities (J0e) below 21 fA/cm2 were obtained using the PIII technique regardless of the tested implantation doses for sheet resistances between 110 and 160 Ω/sq. After metallization steps, the metal/emitter contact resistances were assessed, indicating that these emitters were compatible with a conventional metallization by screen‐printing/firing. The PIII boron emitters' performances were further tested with their integration in n‐type passivated emitter rear totally diffused (PERT) solar cells fully doped by PIII. Promising results already show a conversion efficiency of 20.8% using a lower annealing temperature than with BLII and a reduced production cost.

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High efficiency selective emitter enabled through patterned ion implantation

Cited by 9 publications

References 18 publications

Non-Vacuum Process for Production of Crystalline Silicon Solar Cells

Non-Vacuum Process for Production of Crystalline Silicon Solar Cells

Advancements in n‐Type Base Crystalline Silicon Solar Cells and Their Emergence in the Photovoltaic Industry

Plasma‐immersion ion implantation: A path to lower the annealing temperature of implanted boron emitters and simplify PERT solar cell processing

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