High Efficiency Si/CdS Radial Nanowire Heterojunction Photodetectors Using Etched Si Nanowire Templates

Manna, Santanu; Das, Samaresh; Mondal, Sankar Prasad; Singha, R. K.; Ray, S. K.

doi:10.1021/jp210455w

Cited by 113 publications

(86 citation statements)

References 32 publications

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“…This achieved R value is larger than that of a commercial Si photodiode PD (in the range 0.1À0.2 A/W at 442 nm), 27 near 100 times larger in magnitude than that obtained from a Si/ZnO coreÀshell NW array PD (1.0 Â 10 À2 A/W, 480 nm, À1 V), 28 also larger than that of a Si/CdS coreÀshell NW network PD (<1 A/W, 480 nm, À1 V). 29 To illustrate the piezo-phototronics effect on photoresponsivity more clearly, relative changes of photoresponsivity R with respect to R 0 (corresponding photoresponsivity at no strain) are calculated and summarized in Figure 4d. It is observed that, under each power density, the relative change of R varyies with applied strain in a similar manner to that of photocurrent ΔI (Figure 4b) and photoreponsivity R (Figure 4c), displaying a maximum value at an external strain of À0.10%.…”

Section: Resultsmentioning

confidence: 99%

Optimizing Performance of Silicon-Based p–n Junction Photodetectors by the Piezo-Phototronic Effect

et al. 2014

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Silicon-based p-n junction photodetectors (PDs) play an essential role in optoelectronic applications for photosensing due to their outstanding compatibility with well-developed integrated circuit technology. The piezo-phototronic effect, a three-way coupling effect among semiconductor properties, piezoelectric polarizations, and photon excitation, has been demonstrated as an effective approach to tune/modulate the generation, separation, and recombination of photogenerated electron-hole pairs during optoelectronic processes in piezoelectric-semiconductor materials. Here, we utilize the strain-induced piezo-polarization charges in a piezoelectric n-ZnO layer to modulate the optoelectronic process initiated in a p-Si layer and thus optimize the performances of p-Si/ZnO NWs hybridized photodetectors for visible sensing via tuning the transport property of charge carriers across the Si/ZnO heterojunction interface. The maximum photoresponsivity R of 7.1 A/W and fastest rising time of 101 ms were obtained from these PDs when applying an external compressive strain of -0.10‰ on the ZnO NWs, corresponding to relative enhancement of 177% in R and shortening to 87% in response time, respectively. These results indicate a promising method to enhance/optimize the performances of non-piezoelectric semiconductor material (e.g., Si) based optoelectronic devices by the piezo-phototronic effect.

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Section: Resultsmentioning

confidence: 99%

Optimizing Performance of Silicon-Based p–n Junction Photodetectors by the Piezo-Phototronic Effect

et al. 2014

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“…One-dimensional (1D) semiconducting heterostructures [8][9][10][11] are considered the most promising sensitive photodetection materials because they offer not only the high photoconductive gain and property benefits of 1D nanostructures (rich surface trap states and large surface-to-volume ratio) but also the added benefit of multifunctions or new properties arising from the synergistic effects of combining heterojunction materials. Furthermore, the formed heterojunction interface can greatly enhance these PDs' detectivity, response speed, and responsivity [12][13][14][15][16][17]. Fang's group reported that PDs based on both ZnS/ZnO [18] and GaP/ZnS [19] 1D heterojunctions exhibited improved light-detection properties such as a high photoresponsiveness and high spectral selectivity.…”

Section: Introductionmentioning

confidence: 99%

High-performance solar-blind ultraviolet photodetector based on electrospun TiO2-ZnTiO3 heterojunction nanowires

et al. 2015

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High-performance solar-blind UV (ultraviolet) photodetectors (PDs) based on low-dimension semiconducting nanostructures with high sensitivity, excellent cycle stability, and the ability to operate in harsh environments are critical for solar observations, space communication, UV astronomy, and missile tracking. In this study, TiO 2 -ZnTiO 3 heterojunction nanowire-based PDs are successfully developed and used to detect solar-blind UV light. A photoconductive analysis indicates that the fabricated PDs are sensitive to UV illumination, with high sensitivity, good stability, and high reproducibility. Further analysis indicates that the rich existence of grain boundaries within the TiO 2 -ZnTiO 3 nanowire can greatly decrease the dark current and recombination of the electron-hole pairs and thereby significantly increase the device's photosensitivity, spectra responsivity (1.1 × 10 6 ), and external quantum efficiency (4.3 × 10 8 %). Moreover, the PDs exhibit good photodetective performance with fast photoresponse and recovery and excellent thermal stability at temperatures as high as 175 °C . According to these results, TiO 2 -ZnTiO 3 heterojunction nanowires exhibit great potential for applications in high-performance optical electronics and PDs, particularly next-generation photodetectors with the ability to operate in harsh environments.

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“…6−10 Second, III−V and II−VI NWs have been grown vertically on Si and germanium substrates 11−27 and on Si NWs, forming branched heterostructure NWs. 28 Lastly, there has been recent interest in core/ shell heterostructure NWs, though the Si/III−V or II−VI core/ shell interfaces are often difficult to control 29 or have not been characterized 30 and shells of high crystal quality with thicknesses beyond several nanometers have not been explored. 6,31,32 Conceptually, facet-selective growth provides a means by which to reduce the interfacial area of mismatched materials since the growing layer is confined to the width of the facet on which it is deposited.…”

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confidence: 99%

Facet-Selective Epitaxy of Compound Semiconductors on Faceted Silicon Nanowires

Mankin¹,

Day²,

Gao³

et al. 2015

Nano Lett.

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Integration of compound semiconductors with silicon (Si) has been a long-standing goal for the semiconductor industry, as direct band gap compound semiconductors offer, for example, attractive photonic properties not possible with Si devices. However, mismatches in lattice constant, thermal expansion coefficient, and polarity between Si and compound semiconductors render growth of epitaxial heterostructures challenging. Nanowires (NWs) are a promising platform for the integration of Si and compound semiconductors since their limited surface area can alleviate such material mismatch issues. Here, we demonstrate facet-selective growth of cadmium sulfide (CdS) on Si NWs. Aberration-corrected transmission electron microscopy analysis shows that crystalline CdS is grown epitaxially on the {111} and {110} surface facets of the Si NWs but that the Si{113} facets remain bare. Further analysis of CdS on Si NWs grown at higher deposition rates to yield a conformal shell reveals a thin oxide layer on the Si{113} facet. This observation and control experiments suggest that facet-selective growth is enabled by the formation of an oxide, which prevents subsequent shell growth on the Si{113} NW facets. Further studies of facet-selective epitaxial growth of CdS shells on micro-to-mesoscale wires, which allows tuning of the lateral width of the compound semiconductor layer without lithographic patterning, and InP shell growth on Si NWs demonstrate the generality of our growth technique. In addition, photoluminescence imaging and spectroscopy show that the epitaxial shells display strong and clean band edge emission, confirming their high photonic quality, and thus suggesting that facet-selective epitaxy on NW substrates represents a promising route to integration of compound semiconductors on Si.

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High Efficiency Si/CdS Radial Nanowire Heterojunction Photodetectors Using Etched Si Nanowire Templates

Cited by 113 publications

References 32 publications

Optimizing Performance of Silicon-Based p–n Junction Photodetectors by the Piezo-Phototronic Effect

Optimizing Performance of Silicon-Based p–n Junction Photodetectors by the Piezo-Phototronic Effect

High-performance solar-blind ultraviolet photodetector based on electrospun TiO2-ZnTiO3 heterojunction nanowires

Facet-Selective Epitaxy of Compound Semiconductors on Faceted Silicon Nanowires

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