High-efficiency single-drift GaAs IMPATT diodes for 72 GHz

Zhang, X.; Freyer, J.

doi:10.1049/el:19840514

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Large Signal Simulation1

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1986

1993

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Cited by 10 publications

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“…The voltage amplitude modulation is 50%. The state-ofthe-art Si and GaAs p'n p'n single-drift flatprofile IMPATT devices are also shown in figure 2 [9], [lo], [ll], [12], [13]. The agreements between simulation results and experimental data for GaAs and Si are very good for the frequencies below the efficiencyfall-off corner frequency.…”

Section: Large Signal Simulationmentioning

confidence: 95%

Characterization of GaInP avalanche transit time device in millimeter-wave frequencies

Meng

Liao

1998 IEEE MTT-S International Microwave Symposium Digest (Cat. No.98CH36192)

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GaInP material has high breakdown electrical fields and thus is suitable to avalanche transit time device application. Millimeter-wave GaInP IMPATT devices at operating temperature (500K) are analyzed by a large signal model in this paper. The simulation confirms that GaInP IMPATT device has the power density advantage when compared to conventional GaAs and Si IMPATT devices. The improvement in power density is about factor of 4 at 100 GHz. Moreover, GaInP IMPATT devices are easy to incorporate into GaAs millimeter-wave monolithic integrated circuit technology because of the lattice-match and high etching selectivity between GaInP and GaAs materials.

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Section: Large Signal Simulationmentioning

confidence: 95%