High-electron-mobility InN epilayers grown on silicon substrate

Liu, Huapeng; Wang, Xinqiang; Chen, Zhaoying; Zheng, Xiantong; Wang, Ping; Sheng, Bowen; Wang, Tao; Rong, Xin; Li, Mo; Zhang, Jian; Yang, Xuelin; Xu, Fujun; Ge, Weikun; Shen, Bo

doi:10.1063/1.5017153

Cited by 27 publications

(14 citation statements)

References 50 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…The transconductance and field-effect mobility were calculated without considering the parasitic resistance, which means that the field-effect mobility was slightly underestimated. Although characterization of electrical properties of InAlN with In composition of ~0.8 films is not found in the literatures, the present mobility of polycrystalline In 0.79 Al 0.21 N is much lower than those of single-crystal InN films 17 . It should be noted that the field effect mobility of 7-nm-thick InAlN TFT is comparable to the Hall mobility of the 150-nm-thick InAlN.…”

Section: Introductionmentioning

confidence: 75%

AlN/InAlN thin-film transistors fabricated on glass substrates at room temperature

Nakamura

Kobayashi

Ueno

et al. 2019

Sci Rep

View full text Add to dashboard Cite

In this study, InAlN was grown on glass substrates using pulsed sputtering deposition (PSD) at room temperature (RT) and was applied to thin-film transistors (TFTs). The surface flatness of the InAIN films was improved by reducing the growth temperature from 350 °C to RT. Further, the electron mobility and concentration of the InAlN film that was grown at RT were observed to be strongly dependent on the In composition. It was also observed that the electron concentration could be reduced during the introduction of Al atoms into InN, which could most likely be attributed to the reduction in the position of the Fermi level stabilization energy with respect to the conduction band edge. Further, InAlN-TFT was fabricated, and successful operation with a field-effect mobility of 8 cm 2 V −1 s −1 was confirmed. This was the first demonstration of the operation of TFTs based on the growth of InAlN on an amorphous substrate at RT.

show abstract

Section: Introductionmentioning

confidence: 75%

AlN/InAlN thin-film transistors fabricated on glass substrates at room temperature

Nakamura

Kobayashi

Ueno

et al. 2019

Sci Rep

View full text Add to dashboard Cite

show abstract

“…AlN and GaN are highly important for optoelectronic applications and form the backbone in modern light emitting diode technology. The revised band gap of InN to 0.7 eV 1 and its high electron mobility 2,3 open up new opportunities; such as IR emitters, sensors 4 , solar cells, 5 thinfilm transistors 6 , and high-electron mobility transistors 7 . As all such applications are based on heterostructures with homogeneous coverage of nano-scale active layers, highly controlled InN epitaxy is paramount to realize any application.…”

Section: Introductionmentioning

confidence: 99%

On the dynamics in chemical vapor deposition of InN

Pedersen

Hsu

Deminskyi

et al. 2021

Preprint

View full text Add to dashboard Cite

Epitaxial, nanometer-thin indium nitride (InN) films are considered as promising active layers in various device applications but remains challenging to deposit. We compare the morphological evolution and characterizations of InN films with various growth conditions in chemical vapor deposition (CVD), by both a plasma atomic layer deposition (ALD) approach and a conventional metalorganic CVD approach. Our results, and previous literature, show that a time-resolved precursor supply is highly beneficial for deposition of smooth and continuous InN nanometer-thin films. We show that the time for purging the reactor between the precursor pulses and low deposition temperature are key factors to achieve homogeneous InN. Our study suggests that 320 °C is the upper temperature where the dynamics of the deposition chemistry can be controlled to involve only surface reactions with surface species. The results highlight the promising role of the ALD technique in realizing electronic devices based on nanometer-thin InN layers.

show abstract

“…In fact, the quantum efficiency of photovoltaic cells, which are based on GaN/InGaN prepared on a sapphire substrate via the metalorganic chemical vapor deposition method, reaches 60% (Ke et al, 2018). Therefore, researchers are trying various new methods to prepare high-quality InN thin films (Darakchieva et al, 2011;Zhou et al, 2017;Anjum et al, 2018;Bi et al, 2018;Kobayashi et al, 2018;Liu et al, 2018;Peng et al, 2018) to expand the applications of InN. The emission wavelength of InN-based materials can reach the long-wavelength communication band of 1.55 µm.…”

Section: Introductionmentioning

confidence: 99%

Study on Preparation and Properties of InN Films on Self-Supporting Diamond Substrates Under Different Nitrogen Flows

et al. 2020

View full text Add to dashboard Cite

Several InN film samples with superb properties were prepared on a self-supporting diamond substrate for different nitrogen flow rates using an electron cyclotron resonance plasma-enhanced metal-organic chemical vapor deposition (ECR-PEMOCVD) system. After the InN film samples were obtained, the samples were characterized via reflected high-energy electron diffraction (RHEED), X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscope (AFM), and electron probe micro-analysis (EPMA) to study the effect of the nitrogen flow on the quality of the InN films. The experimental results show that the variation in the nitrogen flow has a great impact on the preferential growth of the (0002) crystal plane of the InN thin film. By increasing the nitrogen flow moderately, the crystal quality of the film is improved. Under the growth condition of appropriate nitrogen flow, InN thin films with a preferred orientation along the c-axis can be obtained, and the surface of the resulting InN thin films is relatively flat. However, a high nitrogen flow does not improve the film crystal quality. The results of the experiment and of the analysis show that the InN films prepared with a nitrogen flow rate of 80 sccm have an excellent preferential orientation. The result of the EPMA test shows that the percentages of the In and N atoms in the prepared film samples are close to a ratio of 1:1, and a small amount of metal In droplets is present. In addition, the InN thin films prepared in such condition have an excellent surface morphology and composition.

show abstract

High-electron-mobility InN epilayers grown on silicon substrate

Cited by 27 publications

References 50 publications

AlN/InAlN thin-film transistors fabricated on glass substrates at room temperature

AlN/InAlN thin-film transistors fabricated on glass substrates at room temperature

On the dynamics in chemical vapor deposition of InN

Study on Preparation and Properties of InN Films on Self-Supporting Diamond Substrates Under Different Nitrogen Flows

Contact Info

Product

Resources

About