High energy excimer laser system for nanosecond annealing of semiconductor devices

Besaucele, Herve; Adnet, Audrey; Beau, François; Bouksou, Yacine; Bellier, Cédric; Ceccato, P.; Chatelain, Maxime; Douri, Nabil; Dusserre, Hervé; Dutems, Cyril; Heintzmann, Martin; Huet, Karim; Lenormand, Mathieu; Lespinasse, Bobby; Martinez, Vincent A.; Mazzamuto, Fulvio; Melin, Antoine; Perrot, Sylvain; Rodrigues, David; Ruet, Laurent; Sannier, Olivier; Thébault, Guillaume; Toqué-Tresonne, I.; Vestraete, Armand; Zekri, Karim

doi:10.1117/12.2522443

Cited by 7 publications

(12 citation statements)

References 3 publications

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“…The second method applied to determine the ED th value is based on the TRR measurement available on the UV-NLA LT-3100 platform. 33 The typical TRR signals obtained during the UV-NLA process are shown in Fig. 2.…”

Section: Resultsmentioning

confidence: 99%

“…The SiO 2 /Si wafer is submitted to a UV-NLA using the LT-3100 platform from SCREEN Semiconductor Solutions Co., Ltd. to form wrinkles on the surface. 33 The pulse duration is set at 160 ns for its full width at half maximum. As this platform uses a xenonchloride excimer laser source of 308 nm wavelength, the heat generation by laser absorption can be theoretically limited within a few tens of nanometers from the surface of most semiconductor materials used in CMOS such as Si, germanium (Ge), and silicongermanium (SiGe).…”

Section: Methodsmentioning

confidence: 99%

“…To determine the Si substrate melting threshold ED (ED th ), the Haze measurement is performed at a wavelength of 360 nm by the SP2 equipment from KLA-Tencor. Also, an in situ time-resolved reflectivity (TRR) methodology at a wavelength of 635 nm is available on the UV-NLA equipment 33 and the obtained signals are compared with the Haze measurement results. To observe the wrinkles formed on the sample surface, SEM images are collected with a field size of 40 μm × 40 μm.…”

Section: Methodsmentioning

confidence: 99%

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Non-Equilibrium Growth of Surface Wrinkles Emerging in an SiO₂/Si Stack during Si Melting Induced by UV Nanosecond Pulsed Laser Annealing

Karmous

Rozé

Raynal³

et al. 2022

ECS J. Solid State Sci. Technol.

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UV nanosecond pulsed laser annealing (UV-NLA) is demonstrating clear benefits in emerging 3D-integrated electronic devices, where the allowed thermal budget is strictly limited to preserve underlying device performance. A possible drawback of UV-NLA is that melting a solid substrate covered by a dielectric layer, which can be found in typical electronic device structures, induces wrinkles on the surface and may be an issue for subsequent processes. In this study, UV-NLA is performed in SiO2/Si structures to systematically investigate the emergence of wrinkles. A classical analytical model shows good agreement with our experimental results if a fitting coefficient is involved. Interestingly, its value rapidly increases for a thinner SiO2 film, whereas it becomes closer to unity for a thicker SiO2 film. This might infer a possible discrepancy of the material properties taken from literature and those of real industrial thin SiO2 films. The degree of the initial SiO2 film stress being negligible compared to the SiO2 shear modulus, its impact on the growth of wrinkles is not significant in our experiment.

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Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

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Non-Equilibrium Growth of Surface Wrinkles Emerging in an SiO₂/Si Stack during Si Melting Induced by UV Nanosecond Pulsed Laser Annealing

Karmous

Rozé

Raynal³

et al. 2022

ECS J. Solid State Sci. Technol.

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“…A 308 nm wavelength (i.e., UV) nanosecond pulsed excimer laser annealing (SCREEN-LASSE LT3100, more details are given in Ref. 22) was applied at RT with different laser energy densities (J cm −2 ) and a pulse duration of 160 ns to melt the ion-implanted SiGe layer. An in situ time-resolved reflectivity (TRR) methodology using a light of 635 nm wavelength (see Ref.…”

Section: Methodsmentioning

confidence: 99%

“…22) was used to determine EC conditions. Two representative MLA conditions were then selected for further analysis: (i) the EC with a very limited SC in terms of depth at 0.60 J/cm 2 [Fig.1(a)] and (ii) the EC followed by a significant SC at 1.20 J/cm 2 [Fig.1(b)].…”

mentioning

confidence: 99%

Dopant Redistribution and Activation in Ga Ion-Implanted High Ge Content SiGe by Explosive Crystallization during UV Nanosecond Pulsed Laser Annealing

Tabata¹,

Huet²,

Rozé³

et al. 2021

ECS J. Solid State Sci. Technol.

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Explosive crystallization (EC) is often observed when using nanosecond-pulsed melt laser annealing (MLA) in amorphous silicon (Si) and germanium (Ge). The solidification velocity in EC is so fast that a diffusion-less crystallization can be expected.In the contacts of advanced transistors, the active level at the metal/semiconductor Schottky interface must be very high to achieve a sub-10 -9 ohm.cm 2 contact resistivity, which has been already demonstrated by using the dopant surface segregation induced by MLA. However, the beneficial layer of a few nanometers at the surface may be easily consumed during subsequent contact cleaning and metallization. EC helps to address such kind of process integration issues, enabling the optimal positioning of the peak of the dopant chemical profile. However, there is a lack of experimental studies of EC in heavily-doped semiconductor materials. Furthermore, to the best of our knowledge, dopant activation by EC has never been experimentally reported. In this paper, we present dopant redistribution and activation by an EC process induced by UV nanosecond-pulsed MLA in heavily gallium (Ga) ion-implanted high Ge content SiGe. Based on the obtained results, we also highlight potential issues of integrating EC into real device fabrication processes and discuss how to manage them.

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Estimation of the melting threshold of Ti supersaturated Si using time resolved reflectometry and haze measurements

Montero¹,

Caudevilla²,

Algaidy³

et al. 2023

Semicond. Sci. Technol.

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Hyperdoped or supersaturated semiconductors are gathering the attention of industry and research institutions due to their sub-bandgap photon absorption properties. In this study, two fast and non-invasive techniques, Time-Resolved Reflectometry (TRR) and Haze Measurements, are applied to infer the melt and solidification regimes of Ti supersaturated 300 mm silicon wafers, aiming to ease the characterization process towards high volume manufacturing of supersaturated materials. Ti supersaturation is attained by using an ion implantation process with a dose 3x1015 cm-2, which amorphizes the surface. Crystalline quality is then recovered by means of a XeCl UV Nanosecond Laser Annealing (NLA) process. TRR technique is used to determine two different melting and solidification processes of the laser annealed implanted surface. A first brief, low temperature peak (α peak) is associated with the melting process of the amorphized surface, followed by a longer peak/plateau (β1 peak/plateau), linked to the melting process of the crystalline phase below the amorphized layer, at sufficiently high laser fluences. Haze technique is used to indirectly measure the crystalline quality after the solidification process of the laser-annealed surface. Atomic Force Microscopy (AFM) measurements are used to obtain the surface roughness value and cross-section HRTEM micrographs to check crystalline quality.

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High energy excimer laser system for nanosecond annealing of semiconductor devices

Cited by 7 publications

References 3 publications

Non-Equilibrium Growth of Surface Wrinkles Emerging in an SiO₂/Si Stack during Si Melting Induced by UV Nanosecond Pulsed Laser Annealing

Non-Equilibrium Growth of Surface Wrinkles Emerging in an SiO₂/Si Stack during Si Melting Induced by UV Nanosecond Pulsed Laser Annealing

Dopant Redistribution and Activation in Ga Ion-Implanted High Ge Content SiGe by Explosive Crystallization during UV Nanosecond Pulsed Laser Annealing

Estimation of the melting threshold of Ti supersaturated Si using time resolved reflectometry and haze measurements

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High energy excimer laser system for nanosecond annealing of semiconductor devices

Cited by 7 publications

References 3 publications

Non-Equilibrium Growth of Surface Wrinkles Emerging in an SiO2/Si Stack during Si Melting Induced by UV Nanosecond Pulsed Laser Annealing

Non-Equilibrium Growth of Surface Wrinkles Emerging in an SiO2/Si Stack during Si Melting Induced by UV Nanosecond Pulsed Laser Annealing

Dopant Redistribution and Activation in Ga Ion-Implanted High Ge Content SiGe by Explosive Crystallization during UV Nanosecond Pulsed Laser Annealing

Estimation of the melting threshold of Ti supersaturated Si using time resolved reflectometry and haze measurements

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Non-Equilibrium Growth of Surface Wrinkles Emerging in an SiO₂/Si Stack during Si Melting Induced by UV Nanosecond Pulsed Laser Annealing

Non-Equilibrium Growth of Surface Wrinkles Emerging in an SiO₂/Si Stack during Si Melting Induced by UV Nanosecond Pulsed Laser Annealing