High-energy X-ray photoelectron spectroscopy study of MBE grown (Eu,Gd) Te layers

Chemical stability of the magnetic oxide EuO directly on silicon observed by hard x-ray photoemission spectroscopy

“…4(c), in contrast, the 4f spectrum of the EuO compound (ii) shows a large additional multiplet structure in the binding energy region from 5-13 eV below E F , which corresponds to the 4f 6 → 4f 5 final-state multiplet of trivalent Eu 3+ . This broad final-state structure is observed in accordance with previous experimental works on Eu 3+ compounds [23][24][25][26] and calculated multiplet lines 21,27 [see Fig. 4(e)].…”

“…The spectra consist of two main groups, the 3d 5/2 and 3d 3/2 structures, which are clearly separated due to a large spin-orbit splitting of 29.2 eV, in excellent agreement with previous works. 26 The broad structure in the center is assigned to plasmon excitations caused by fast 3d photoelectrons passing the Al top layer, 22 as it occurs at the correct value of energy loss (15.8 eV) from the 3d 5/2 peak (and 3d 3/2 peak, which is out of the diagram range).…”

Fano Resonance Investigation of PbTe Layers Containing Eu and Gd Ions

“…The paper concerns to the set of selected results of electronic structure study of narrow gap semiconductor crystal like PbTe heavily doped with rare earth atoms Eu and Gd and to the rare earth telluride's semiconductor thin layers investigation done using resonant photoemission spectroscopy. The previous studies of (Eu,Gd)Te thin layers [12] showed the presence of Eu 3+ ions at the surface of layer and dominant presence of Eu 2+ ions inside the layer. Unfortunately, due to the technology limits the maximum amount of Gd ions in this compound cannot overcome 1-2 at.%.…”

“…• C), atoms Eu and Gd deposition and photoemission measurements presented in the paper were performed at the FLIPPER II station of synchrotron storage ring in HASYLAB, DESY (Germany) [9][10][11][12]. The paper concerns to the set of selected results of electronic structure study of narrow gap semiconductor crystal like PbTe heavily doped with rare earth atoms Eu and Gd and to the rare earth telluride's semiconductor thin layers investigation done using resonant photoemission spectroscopy.…”

“…Unfortunately, due to the technology limits the maximum amount of Gd ions in this compound cannot overcome 1-2 at.%. Because Eu 3+ 4f and Gd 3+ 4f electrons have the similar binding energies, we were not able to determine their binding energies for this case and the presence of Gd ions was possible to detect basing on high energy photoemission spectra for 3d core levels [12]. To increase the atomic percentage of Gd in PbTe the experiment was performed to deposit controlled amount of Gd atoms (25Å on 6000Å PbTe, Fig.…”