High Field-Emission Stability of Offset-Thin-Film Transistor-Controlled Al-Doped Zinc Oxide Nanowires

Yang, Po‐Yu; Wang, Jyh-Liang; Tsai, Wei-Chih; Wang, Shui-Jinn; Lin, Jia-Chuan; Lee, I-Che; Chang, Chia-Tsung; Cheng, Huang–Chung

doi:10.7567/jjap.50.04dn07

Cited by 3 publications

(1 citation statement)

References 23 publications

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“…It had an on=off emission current ratio of 3.05 × 10 5 , which was achieved using a TFT gate voltage in the range of 0-30 V. Furthermore, the current fluctuated by less than 2%. 24) Yang et al adopted a MOSFET as the active device for ZnO nanowires. 25) They observed current changes of four orders of magnitude (from 0.2 nA to 1.15 µA) when the MOSFET gate voltage was increased from 0.8385 to 1.5255 V and the current fluctuations were reduced from 61.4 to 3.2%.…”

Section: Introductionmentioning

confidence: 99%

Highly stable field emission from ZnO nanowire field emitters controlled by an amorphous indium–gallium–zinc-oxide thin film transistor

Li¹,

Wang²,

Zhang³

et al. 2018

Jpn. J. Appl. Phys.

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Lowering the driving voltage and improving the stability of nanowire field emitters are essential for them to be applied in devices. In this study the characteristics of zinc oxide (ZnO) nanowire field emitter arrays (FEAs) controlled by an amorphous indium–gallium–zinc-oxide thin film transistor (a-IGZO TFT) were studied. A low driving voltage along with stabilization of the field emission current were achieved. Modulation of field emission currents up to three orders of magnitude was achieved at a gate voltage of 0–32 V for a constant anode voltage. Additionally, a-IGZO TFT control can dramatically reduce the emission current fluctuation (i.e., from 46.11 to 1.79% at an emission current of ∼3.7 µA). Both the a-IGZO TFT and ZnO nanowire FEAs were prepared on glass substrates in our research, demonstrating the feasibility of realizing large area a-IGZO TFT-controlled ZnO nanowire FEAs.

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Section: Introductionmentioning

confidence: 99%

Highly stable field emission from ZnO nanowire field emitters controlled by an amorphous indium–gallium–zinc-oxide thin film transistor

Li¹,

Wang²,

Zhang³

et al. 2018

Jpn. J. Appl. Phys.

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Modulation of field emission current from ZnO nanowires by high voltage a-Si thin film transistor

Chen

Song

et al. 2015

2015 28th International Vacuum Nanoelectronics Conference (IVNC)

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Improvement of a capacitive UV-sensor by porous silicon powders embedded in epoxy on porous silicon film

Lin

Lai

et al. 2022

Opt. Mater. Express

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A high-sensitivity porous silicon (PS) powder-based capacitive UV-sensor is developed on the PS-film structure. To the best of our knowledge, this is the first report on PS powder-based capacitive UV-sensors. An anodization etching approach based on a sawtooth waveform electrolytic voltage is adopted to get sufficient PS-powders. The collected PS-powders are embedded on the PS-film and covered with epoxy to improve the UV sensitivity. The results show that the increase of UV sensitivity on capacitive characteristics is almost linearly related to the PS powder mass embedded inside. The proposed method is suitable for fine-tuning and improving the equivalent permittivity of the capacitive UV-sensor without changing the device geometry design, which can be compatibly applied to Si-VLSI technology.

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High Field-Emission Stability of Offset-Thin-Film Transistor-Controlled Al-Doped Zinc Oxide Nanowires

Cited by 3 publications

References 23 publications

Highly stable field emission from ZnO nanowire field emitters controlled by an amorphous indium–gallium–zinc-oxide thin film transistor

Highly stable field emission from ZnO nanowire field emitters controlled by an amorphous indium–gallium–zinc-oxide thin film transistor

Modulation of field emission current from ZnO nanowires by high voltage a-Si thin film transistor

Improvement of a capacitive UV-sensor by porous silicon powders embedded in epoxy on porous silicon film

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