High Figure-of-Merit (${V}_{\text{BR}}^{\text{2}}$ /${R}_{\text{ON}}$ ) AlGaN/GaN Power HEMT With Periodically C-Doped GaN Buffer and AlGaN Back Barrier

Lee, Jun-Hyeok; Ju, J.J.; Atmaca, G.; Kim, Jeong-Gil; Kang, Seung-Hyeon; Lee, Yong Soo; Lee, Sang‐Heung; Lim, Jong−Won; Kwon, Ho‐Sang; Li̇şesi̇vdi̇n, S. B.; Lee, Jung‐Hee

doi:10.1109/jeds.2018.2872975

Cited by 34 publications

(14 citation statements)

References 25 publications

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“…The thickness and Al fraction of AlGaN back barrier can be optimized to further suppress the off‐state leakage and CC. [ 86,87 ] Some recent literature data on the buffer structure and leakage properties of GaN devices are reported in Table 1 .…”

Section: Modified Buffer Structuresmentioning

confidence: 99%

“…They also proved that the CC of GaN HEMT increased from 35% to 45% when carbon atoms was doped into the GaN buffer, while it decreased to 18% with an optimized AlGaN back barrier. [ 87 ] In addition, the AlGaN back barriers doped with Si are applied to mitigate the decrease in channel conductivity resulting from C‐doping semi‐insulating GaN buffer in Hao's work. The maximum output current increased from 412 to 720 mA mm ‐1 with a low CC of 7.8%.…”

Section: Modified Buffer Structuresmentioning

confidence: 99%

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Recent Advances in GaN‐Based Power HEMT Devices

Cheng

Wang

et al. 2021

Adv Elect Materials

133

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The ever‐increasing power density and operation frequency in electrical power conversion systems require the development of power devices that can outperform conventional Si‐based devices. Gallium nitride (GaN) has been regarded as the candidate for next‐generation power devices to improve the conversion efficiency in high‐power electric systems. GaN‐based high electron mobility transistors (HEMTs) with normally‐off operation is an important device structure for different application scenarios. In this review, an overview of a series of effective approaches to improve the performance of GaN‐based power HEMT devices is given. Modified epistructures are presented to suppress defects and current leakage, and low‐damage recess‐free processes are discussed in fabricating normally‐off HEMTs. Possible effects of dielectrics on a metal–insulator–semiconductor (MIS) structure are also intensively introduced. Metal/semiconductor contact engineering is investigated, and fabrication of Au‐free ohmic contact and graphene insertion layer to enhance the device performance is emphasized. Finally, the effects of field plates are studied through the use of simulated and fabricated devices.

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Section: Modified Buffer Structuresmentioning

confidence: 99%

Section: Modified Buffer Structuresmentioning

confidence: 99%

Recent Advances in GaN‐Based Power HEMT Devices

Cheng

Wang

et al. 2021

Adv Elect Materials

133

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“…Given the experimental data above, we postulate that certain types of shallow traps exist underneath the gate. They might be from the gate, the AlGaN barrier [16], or the GaN buffer [17]. The most likely location of the traps is in the gate, though the exact position is still under investigation.…”

Section: Current Pathmentioning

confidence: 99%

Dynamic Ron Effect in GaN HEMT in a Zero-Voltage-Switching Circuit Due to Off-Resonance Operation

Sun

Xia²,

et al. 2021

IEEE J. Electron Devices Soc.

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Dynamic ON resistance of GaN devices is a must-care point for users. In this paper, the reverse conduction of commercial GaN power transistors is studied. Even though the commercial HEMTs show stable performance in normal operation modes (off-to-on), significant dynamic ON resistance can be seen in some particular conditions. A test method is set up to evaluate dynamic Ron in a reverse-to-on mode. The conditions to activate the behavior are discussed, and the cause of dynamic Ron is possibly due to traps located in the gate region. Meanwhile, a wireless power transfer system operating at 6.78MHz is used to study the effect of reverse conduction mode on dynamic resistance at the circuit level. According to the change of the operation frequency, we find that the influence of reverse conduction on the dynamic Ron effect is not only affected by the value of reverse conduction voltage but also related to the operating mode of the device.

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“…Currently, sapphire and Si are popularly used as substrate materials for GaN. However, the large lattice mismatch between GaN buffer and Si (~17%) [1] substrate, or the nitrogen vacancy and oxygen impurity, may result in defects and a large number of dislocations in the buffer layer, forming an n-type buffer layer [2].…”

Section: Introductionmentioning

confidence: 99%

“…Several studies have presented doped iron (Fe) [3][4][5] or carbon (C) [2,[6][7][8] in the buffer layer to suppress buffer defects. If the doping position is too close to the channel layer, or the doping concentration is too strong, it may affect the reliability and electrical properties of the device.…”

Section: Introductionmentioning

confidence: 99%

The Characteristics of 6-Inch GaN on Si RF HEMT with High Isolation Composited Buffer Layer Design

et al. 2020

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In this study, a 50-nm Al0.05Ga0.95N back barrier (BB) layer was used in an AlGaN/GaN high-electron-mobility transistor between the two-dimensional electron gas channel and Fe-doped/C-doped buffer layers. This BB layer can reduce the channel layer. The BB layer is affected by doped carriers in the buffer layer and the conduction energy band between the channel and the buffer layers. The Ion/Ioff ratio of the BB device was 4.66 × 105, and the ratio for the device without BB was 1.91 × 103. Lower leakage currents were obtained in the BB device because of the higher conduction energy band. The 0.25-μm gate length device with the BB exhibited a high current gain cutoff frequency of 24.4 GHz, and power gain cutoff frequency of 73 GHz.

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High Figure-of-Merit (${V}_{\text{BR}}^{\text{2}}$ /${R}_{\text{ON}}$ ) AlGaN/GaN Power HEMT With Periodically C-Doped GaN Buffer and AlGaN Back Barrier

Cited by 34 publications

References 25 publications

Recent Advances in GaN‐Based Power HEMT Devices

Recent Advances in GaN‐Based Power HEMT Devices

Dynamic Ron Effect in GaN HEMT in a Zero-Voltage-Switching Circuit Due to Off-Resonance Operation

The Characteristics of 6-Inch GaN on Si RF HEMT with High Isolation Composited Buffer Layer Design

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