High-Frequency Performance of GaN High-Electron Mobility Transistors on 3C-SiC/Si Substrates With Au-Free Ohmic Contacts

Jatal, Wael; Baumann, Uwe; Tonisch, Katja; Schwierz, Frank; Pezoldt, Jörg

doi:10.1109/led.2014.2379664

Cited by 51 publications

(21 citation statements)

References 28 publications

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“…In addition to present lower resistance (R ). Some comparisons between different materials are reported in [33] regarding this point, of which the comparison among the 3 materials mentioned above is presented in Fig. 2.…”

Section: Physical Properties and Performance Of Si Sic Y Ganmentioning

confidence: 99%

Recent Advance and Future Progress of GaN Power Semiconductor Devices Used in PV Module Integrated Converters

Rodríguez-Benítez¹,

Silva²,

Hernández-González³

et al. 2018

Preprint

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Power semiconductor devices are essential from the operation point of view, size, efficiency and cost, these components are used in a myriad of applications, providing features that make them an important part of the system in which they are operating. This document analyzes and compares the basic structure, properties, design aspects, as well as temperature performance, stability and switching losses, present in devices on silicon (Si), silicon carbide (SiC) and new generation devices fabricated in gallium nitride (GaN) applied in renewable energy systems. The main objective is determinate the viability of the new generation components, which present a superior performance in view of an increase in efficiency, conductivity, decreases in switching losses, lower resistances and parasitic capacitances as well as higher operating frequency range. Therefore demonstrating the GaN components are a strong and viable candidate to solve some of the problems present in renewable energy systems.

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Section: Physical Properties and Performance Of Si Sic Y Ganmentioning

confidence: 99%

Recent Advance and Future Progress of GaN Power Semiconductor Devices Used in PV Module Integrated Converters

Rodríguez-Benítez¹,

Silva²,

Hernández-González³

et al. 2018

Preprint

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“…Another application for the GaN-on-Si product is lower switching voltage (600 V and lower) power electronics. 19 However, improving the starting material quality and yield, increasing the wafer diameter, reducing wafer cost, and developing normally OFF devices are needed in order to compete with the current state-of-the-art Si devices.…”

Section: Applications and Fi Gures Of Meritmentioning

confidence: 99%

Power electronics with wide bandgap materials: Toward greener, more efficient technologies

et al. 2015

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IntroductionPower electronics is the branch of electronics specifi cally dealing with collecting, delivering, and storing energy, including general and local/commodity energy supplies, by conversion and control of electrical power.1 Specifi c applications range from power supply systems to motor vehicle drives, 2 photovoltaic and fuel cell converters, inverters, and high-frequency heating, 3 among many others. The impact of power electronics has already been signifi cant and is anticipated to be even more so in the future for effi cient energy production and management.As in most other electronics areas, silicon also has been the predominant semiconductor in power electronics to date. However, with wide bandgap materials power electronic components are faster, smaller, more effi cient, and more reliable than their Si-based counterparts. Moreover, they permit the operation of devices at higher voltages, temperatures, and frequencies, 4 making it possible to reduce volume and weight in a wide range of applications. This could lead to large energy savings in industrial and consumer appliances, accelerate widespread use of electric vehicles and fuel cells, and integrate renewable energy into the electric grid.The power electronics market as a whole was about $20 billion in 2012, and power electronics will remain one of the most attractive branches of the semiconductor industry over the next decade. 5 The latest power electronics market forecasts 6 predict an increase of 60% for low-voltage technologies (below 900 V) by the year 2020, accompanied by an approximately 100% market increase for medium (1.2-1.7 kV) and high voltage (2 kV and above) technologies. This implies that the largest market increase in this sector over the next decade (medium and high voltage) will rely on semiconductor technologies beyond silicon (also see article by Okumura in this issue). This can be likened to a second revolution, equivalent to the introduction of large scale fabrication of silicon complementary metal oxide semiconductor (CMOS) technology, which led to the commoditization of electronics and formed the basis of our modern technological era. The power electronics revolution could be setting the basis for a world centered on greener technologies: improved energy conversion effi ciencies, faster switching, and more compact, lighter systems with better thermal management and tolerance will have tremendous impact on industrialization and energy systems, encompassing energy savings, renewable energy systems, and Greener technologies for more effi cient power generation, distribution, and delivery in sectors ranging from transportation and generic energy supply to telecommunications are quickly expanding in response to the challenge of climate change. Power electronics is at the center of this fast development. As the effi ciency and resiliency requirements for such technologies can no longer be met by silicon, the research, development, and industrial implementation of wide bandgap semiconductors such as gallium nitride (GaN) and sil...

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“…While the first determines the tensile stress in the AlN film , the second may relate to electrical leakage via screw dislocations or for instance, via the diffusion of Ga through the thinner AlN in the V‐pits, justifying the attempts to grow low strained and smooth AlN layers . One alternative for enabling the nucleation of AlN at high temperature is to intercalate another material like 3C‐SiC .…”

Section: Buffer Layer Schemes On Siliconmentioning

confidence: 99%

Al(Ga)N/GaN high electron mobility transistors on silicon

Cordier

2015

Physica Status Solidi (a)

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Phone: þ33 493 954 200, Fax: þ33 493 958 361In this paper, a review of the different buffer layers and heterostructures developed for Al(Ga)N/GaN high electron mobility transistors (HEMTs) on silicon substrate is presented. The difficulties associated with the barrier thinning and the rise of the Al content are discussed. Finally, we compare the DC output characteristics and the small and large signal RF performances of thin barrier AlGaN/GaN HEMTs, thick barrier gate recessed ones, and ultra-thin AlN barrier devices.

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High-Frequency Performance of GaN High-Electron Mobility Transistors on 3C-SiC/Si Substrates With Au-Free Ohmic Contacts

Cited by 51 publications

References 28 publications

Recent Advance and Future Progress of GaN Power Semiconductor Devices Used in PV Module Integrated Converters

Recent Advance and Future Progress of GaN Power Semiconductor Devices Used in PV Module Integrated Converters

Power electronics with wide bandgap materials: Toward greener, more efficient technologies

Al(Ga)N/GaN high electron mobility transistors on silicon

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