High gain-bandwidth-product silicon heterointerface photodetector

Abstract

Effects of Si doping on normal incidence In As ∕ In 0.15 Ga 0.85 As dots-in-well quantum dot infrared photodetectors J. Appl. Phys. 99, 083105 (2006); 10.1063/1.2189973High-performance 30-period quantum-dot infrared photodetector

Transfer of InP epilayers by wafer bonding

“…The InGaAs has high light absorption at 1.3 and 1.55 mm. On the other hand, Si has longer lifetime and higher electron/hole ionization ratio leading to higher avalanche multiplication efficiency [4]. In Table 1 there is a list of recent devices presented, using InP-to-Si direct wafer bonding.…”

Influence of nanocrystal distribution on electroluminescence from Si+-implanted SiO 2 thin films

“…[1][2][3][4][5][6][7][8][9] As well known, most of the photonic components fabricated with Si technology have been demonstrated, such as optical modulators, 1,2 switches, 3,4 low-loss waveguides, 5,6 and detectors. 7,8 The observation of photoluminescence (PL) from porous Si at room temperature has attracted much research attention to fabricate Si-based light emitting devices employing low dimensional Si materials, in which the quantum confinement effect was initially thought to be the main mechanism of the strong luminescence. 9 A lot of efforts based on various techniques have been made to synthesize low dimensional Si, preferably Si nanocrystals (nc-Si).…”

Reduction of thermal conductivity in wafer-bonded silicon

“…[1][2][3][4][5][6][7][8][9] In this work, we will describe reductions in thermal conductivity in bulk silicon achieved by bonding a stack of thin wafers as illustrated in Fig. 1(a), in which numerous nanometer air gaps 10 in the bonded interface were used for impeding normal heat flow.…”