Transfer of InP epilayers by wafer bonding

Hjort, Klas

doi:10.1016/j.jcrysgro.2004.04.053

Cited by 21 publications

(18 citation statements)

References 67 publications

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“…A large research effort has been invested worldwide highquality, direct-bandgap compound semiconductors on silicon [1][2][3][4][5] in order to overcome the intrinsically poor light emission efficiency of crystalline silicon. The recently developed hybrid silicon evanescent platform (HSEP) [6,7] represents one promising approach to equip active optical functionality onto silicon-on-insulator (SOI) substrates.…”

Section: Introductionmentioning

confidence: 99%

Hybrid silicon evanescent approach to optical interconnects

et al. 2009

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We discuss the recently developed hybrid silicon evanescent platform (HSEP), and its application as a promising candidate for optical interconnects in silicon. A number of key discrete components and a wafer-scale integration process are reviewed. The motivation behind this work is to realize silicon-based photonic integrated circuits possessing unique advantages of III-V materials and silicon-oninsulator waveguides simultaneously through a complementary metal-oxide semiconductor fabrication process. Electrically pumped hybrid silicon distributed feedback and distributed Bragg reflector lasers with integrated hybrid silicon photodetectors are demonstrated coupled to SOI waveguides, serving as the reliable on-chip single-frequency light sources. For the external signal processing, MachZehnder interferometer modulators are demonstrated, showing a resistance-capacitance-limited, 3 dB electrical bandwidth up to 8 GHz and a modulation efficiency of 1.5 V mm. The successful implementation of quantum well intermixing technique opens up the possibility to realize multiple III-V bandgaps in this platform. Sampled grating DBR devices integrated with electroabsorption modulators (EAM) are fabricated, where the bandgaps in gain, mirror, and EAM re-

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Section: Introductionmentioning

confidence: 99%

Hybrid silicon evanescent approach to optical interconnects

et al. 2009

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“…Heterogeneous integration of InP with silicon is of great technological importance since it would lead to the integration of Si-based microelectronic devices with InPbased optoelectronic devices [1,2]. Heteroepitaxial growth of InP layers on Si is not a viable solution due to the large lattice mismatch between InP and Si (8.1%).…”

Section: Introductionmentioning

confidence: 99%

“…Heteroepitaxial growth of InP layers on Si is not a viable solution due to the large lattice mismatch between InP and Si (8.1%). Heteroepitaxy of InP on Si would result in highly defective epitaxial layers containing an unacceptably large density of threading dislocations and antiphase boundaries [1,3]. These defects have deleterious effects on the performance and reliability of the optoelectronic devices fabricated using these epitaxial layers [1].…”

Section: Introductionmentioning

confidence: 99%

“…Heteroepitaxy of InP on Si would result in highly defective epitaxial layers containing an unacceptably large density of threading dislocations and antiphase boundaries [1,3]. These defects have deleterious effects on the performance and reliability of the optoelectronic devices fabricated using these epitaxial layers [1]. One of the approaches to transfer high structural quality single crystalline thin layers onto foreign substrates without any epitaxial relationship to the transferred film is direct wafer bonding and layer transfer via hydrogen/helium implantation and layer splitting [4][5][6][7].…”

Section: Introductionmentioning

confidence: 99%

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Investigation of helium implantation induced blistering in InP

Singh¹,

Radu²,

Scholz³

et al. 2006

Journal of Luminescence

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“…7 Recently, low-temperature bonding of InP to Si has been developed using B 2 H 6 and O 2 plasma chemistry. 8,9 In both the cases, the temperature of bonding was 200°C. So far, all of the bonding techniques developed have used either high-resolution transmission electron microscopy ͑HRTEM͒ or secondary-ion mass spectroscopy ͑SIMS͒ interface analysis to study the bonded interface.…”

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confidence: 99%

Probing Interface Structure of Low-Temperature-Bonded InP on Si

Arokiaraj

Tripathy

Vicknesh

et al. 2005

Electrochemical and Solid-State Letters

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The interface structure of wafer fused InP to Silicon at 220°C was investigated by high-resolution transmission electron microscopy ͑TEM͒ and micro-Raman spectroscopy. TEM measurements reveal the formation of a thin amorphous layer with the presence of a few nanocrystallites at the interface. Cross-sectional Raman scattering measurements carried out on the cleaved interface regions show a clear evidence of nanocrystalline silicon fractions within the nonstoichiometric silicon oxides. Because microRaman probing is sensitive to atomic scale disorder and crystallite size, Raman line shape analysis has also been explored to confirm the formation of nanocrystalline silicon ͑nc-Si͒ at the bonded interface.

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Transfer of InP epilayers by wafer bonding

Cited by 21 publications

References 67 publications

Hybrid silicon evanescent approach to optical interconnects

Hybrid silicon evanescent approach to optical interconnects

Investigation of helium implantation induced blistering in InP

Probing Interface Structure of Low-Temperature-Bonded InP on Si

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