2011
DOI: 10.1016/j.synthmet.2011.07.025
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High hole mobility through charge recombination interface in organic light-emitting diodes

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Cited by 20 publications
(9 citation statements)
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“…Although Dev.1 and Dev.2 have similar device structures and EL emissions, as shown in Figure a–c, it is anticipated that they have different balancing degrees of charge-carrier injection and thus possess various optoelectronic performances due to their different hole-injection functional layers (HAT-CN and PEDOT:PSS). In Dev.2, the hole-injection barrier (0.6 eV) from PEDOT:PSS to the highest occupied molecular orbital (HOMO) of TCTA molecules is much higher than the electron-injection barrier (0.1 eV) from the LiF/Al cathode to the lowest unoccupied molecular orbital (LUMO) of PO-T2T molecules. These different barrier heights for the hole and electron injections might cause an unbalanced carrier injection and poor device performance. In contrast, Dev.1 has the hole-injection layer of HAT-CN, which can efficiently reduce the hole-injection barrier, causing a balanced carrier injection and good device performance .…”
Section: Resultsmentioning
confidence: 99%
“…Although Dev.1 and Dev.2 have similar device structures and EL emissions, as shown in Figure a–c, it is anticipated that they have different balancing degrees of charge-carrier injection and thus possess various optoelectronic performances due to their different hole-injection functional layers (HAT-CN and PEDOT:PSS). In Dev.2, the hole-injection barrier (0.6 eV) from PEDOT:PSS to the highest occupied molecular orbital (HOMO) of TCTA molecules is much higher than the electron-injection barrier (0.1 eV) from the LiF/Al cathode to the lowest unoccupied molecular orbital (LUMO) of PO-T2T molecules. These different barrier heights for the hole and electron injections might cause an unbalanced carrier injection and poor device performance. In contrast, Dev.1 has the hole-injection layer of HAT-CN, which can efficiently reduce the hole-injection barrier, causing a balanced carrier injection and good device performance .…”
Section: Resultsmentioning
confidence: 99%
“…Dopants in this category include 2,3-dichloro-5,6-dicyano-1,4-benzoquinone (DDQ; LUMO: −4.6 eV) and the more widely used 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ; LUMO: −5.24 eV). ,, Following the same concept of molecular design, even higher EA dopants, such as 1,3,4,5,7,8-hexafluorotetracyanonaphthoquinodimethane (F6-TNAP; LUMO: −5.37 eV) , and 3,6-difluoro-2,5,7,7,8,8-hexacyanoquinodimethane (F2-HCNQ; LUMO: −5.59 eV), have been recently synthesized. Other recently reported p-type dopants with high EA include C 60 fullerene (LUMO: −3.6 eV), its fluorinated derivative C 60 F 36 (LUMO: −5.38 eV), , and hexaazatriphenylene hexacarbonitrile (HAT-CN6; LUMO: −5.7 eV). However, most of these dopants have low solubility in common solvents, and are incorporated into devices structures using either evaporation processes , or premixing in an inert matrix because they cannot be effectively solution processed. This limitation significantly restricts further development of solution-processed and mass-produced organoelectronics applications …”
Section: Introductionmentioning
confidence: 99%
“…The equivalent charge mobility in the DBR films was deduced according to the space charge limited current (SCLC) model, which is usually used to evaluate the charge transport in organic semiconductor films. Based on the Poole–Frenkel equation, the equivalent charge mobility in the devices are field dependent and can be describe as follows: μ(E)=μ0 exp(βE)=89ϵnormalrϵ0JE2where μ 0 is the zero‐field mobility and β is the Poole–Frenkel factor. The relative dielectric constant ε r is assumed to be 3 for organic semiconducting materials, and the permittivity of the free space ε 0 is 8.85 × 10 −12 F m −1 .…”
Section: Various Device Structures Of the Multi‐alternating Organic Smentioning
confidence: 99%
“…Generally, a charge recombination and/or generation interface will be formed when the highest occupied molecular orbital (HOMO) of one organic semiconducting material and the lowest unoccupied molecular orbital (LUMO) of another organic semiconducting material are close to each other (for instance, m‐MTDATA and HAT‐CN), which will facilitate the charge transport in the composite films . To improve the conductivity of the hybrid DBRs, we came up with the strategy of utilizing the multi‐alternating organic semiconducting films instead of the single component film as the low‐refractive‐index units.…”
Section: Various Device Structures Of the Multi‐alternating Organic Smentioning
confidence: 99%