High Input Impedance Cryogenic RF Amplifier for Series Nanowire Detector

Wan, Chenhao; Jiang, Zhou; Kang, Lin; Wu, Peiheng

doi:10.1109/tasc.2017.2677519

Cited by 8 publications

(7 citation statements)

References 23 publications

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“…using silicon germanium and gallium arsenide transistors. [13][14][15][16] Digital readout circuits built directly from superconducting electronics, such as nanocryotrons 17 and single flux quantum (SFQ) circuits, 18,19 have also been demonstrated. These integrated superconducting circuits are low-noise and scalable, but usually require additional biasing and suffer from leakage current and crosstalk.…”

mentioning

confidence: 99%

“…The lack of high-impedance coaxial cables makes it necessary to place the high-impedance amplifiers close to the detectors (at the low-temperature stage), which imposes a more stringent power budget. More importantly, even if a high-impedance amplifier is available, 15 loading a standard SNSPD directly with high impedance can lead to latching. 12 In this work, without the need of high-impedance cryogenic amplifiers or any active circuit elements, we break the I B × 50 Ω limit by using an integrated superconducting transmission line taper.…”

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confidence: 99%

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Superconducting nanowire single-photon detector with integrated impedance-matching taper

Zhu

Colangelo

Korzh

et al. 2019

Applied Physics Letters

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Conventional readout of a superconducting nanowire single-photon detector (SNSPD) sets an upper bound on the output voltage to be the product of the bias current and the load impedance, I B × Z load , where Z load is limited to 50 Ω in standard r.f. electronics. Here, we break this limit by interfacing the 50 Ω load and the SNSPD using an integrated superconducting transmission line taper. The taper is a transformer that effectively loads the SNSPD with high impedance without latching. It increases the amplitude of the detector output while preserving the fast rising edge. Using a taper with a starting width of 500 nm, we experimentally observed a 3.6× higher pulse amplitude, 3.7× faster slew rate, and 25.1 ps smaller timing jitter. The results match our numerical simulation, which incorporates both the hotspot dynamics in the SNSPD and the distributed nature in the transmission line taper. The taper studied here may become a useful tool to interface high-impedance superconducting nanowire devices to conventional low-impedance circuits.

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confidence: 99%

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confidence: 99%

Superconducting nanowire single-photon detector with integrated impedance-matching taper

Zhu

Colangelo

Korzh

et al. 2019

Applied Physics Letters

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“…However, due to the coupling capacitor of the amplifier, it is challenging to realize an ultrahigh input impedance at high frequencies. We have designed a cryogenic RF amplifier with a low power dissipation of 0.9 mW and an equivalent input impedance of 6 k || 3.2 pF at 4.2 K for the series nanowire detector [21], and more works on the interconnections and readout results will be covered in the future. The transient results of the 6-pixel SND by the cryogenic RF amplifier with a capacitive input impedance of 6 k || 3.2 pF are simulated by the red lines of Fig.…”

Section: Measurements and Discussionmentioning

confidence: 99%

Characterize the Speed of a Photon-Number-Resolving Superconducting Nanowire Detector

Tao

Hao

et al. 2020

IEEE Photonics J.

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Superconducting series nanowire single-photon detectors (SNDs) have been used for resolving photon numbers. But it can also exhibit a higher counting rate than a single superconducting nanowire single-photon detector (SNSPD), because the serial architecture allows multiple detectors working in parallel and the inductance of each pixel is reduced. In this paper, we found each pixel of the SND could reset fast although the whole detector took a much longer time for recovering. Therefore, the speed of an SND with a large kinetic inductance of 1.25 μH was characterized and compared to a standard SNSPD with the same total inductance. By measuring the detected photon rate over the input photon rate, we obtained a photon counting rate enhancement by 7.5 times. Meanwhile, the timing jitter of the SND was 63 ps at single photon detection regime. Our results show that the series structure and the readout scheme are quite practical in realizing high speed single-photon detectors besides resolving photon numbers.

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“…Few studies have discussed low-noise HBT devices that are capable of operating in the millikelvin range (< 1 K) [21][22][23][24][25][26][27][28]. Among these devices are In neon low-noise SiGe HBT RF transistors, which showed improved performance at that temperature range with reduced active noise power dissipation [24][25][26]28].…”

Section: Image-charge Detection Methodsmentioning

confidence: 99%

“…A more straightforward approach is to use a low power single transistor circuit placed near the qubit. Two types of commercially-available lowpower transistors were proposed for cryogenic applications: high electron mobility transistor (HEMT) [20] and silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) [21][22][23][24][25][26][27][28]. HEMT ampli ers are more suitable for high-frequency applications because of the reduced sensitivity at frequencies < 100 MHz caused by the large corner-frequency of the icker noise [29,30].…”

Section: Introductionmentioning

confidence: 99%

Cryogenic amplification of image-charge detection for readout of quantum states of electrons on liquid helium

Elarabi,

Kawakami,

Konstantinov

2020

Preprint

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Accurate detection of quantum states is a vital step in the development of quantum computing. Image-charge detection of quantum states of electrons on liquid helium can potentially be used for the readout of a single-electron qubit; however, low sensitivity due to added noise hinders its usage in high delity and bandwidth (BW) applications. One method to improve the readout accuracy and bandwidth is to use cryogenic ampli cations near the signal source to minimize the e ects of stray capacitance. We experimentally demonstrate a two-stage ampli cation scheme with a low power dissipation of 90 µW at the rst stage located at the still plate of the dilution refrigerator, and a high gain of 40 dB at the second stage located at the 4 K plate. e good impedance matching between di erent stages and output devices ensure high BW and constant gain in a wide frequency range. e detected image-charge signals are compared for one-stage and two-stage ampli cation schemes.

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High Input Impedance Cryogenic RF Amplifier for Series Nanowire Detector

Cited by 8 publications

References 23 publications

Superconducting nanowire single-photon detector with integrated impedance-matching taper

Superconducting nanowire single-photon detector with integrated impedance-matching taper

Characterize the Speed of a Photon-Number-Resolving Superconducting Nanowire Detector

Cryogenic amplification of image-charge detection for readout of quantum states of electrons on liquid helium

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