High intensity low temperature (HILT) performance of space concentrator GaInP/GaInAs/Ge MJ SCs

Abstract

Abstract:In the work, the results of an investigation of GaInP/GaInAs/Ge MJ SCs intended for converting concentrated solar radiation, when operating at low temperatures (down to -190 o C) are presented. A kink of the cell I-V characteristic has been observed in the region close to V oc starting from -20ºC at operation under concentrated sunlight. The causes for its occurrence have been analyzed and the reasons for formation of a built-in potential barrier for majority charge carriers at the n-GaInP/n-Ge isotype hetero-interface are discussed. The effect of charge carrier transport in n-GaInP/n-p Ge heterostructures on MJ SC output characteristics at low temperatures has been studied including EL technique.

Low temperature measurements of state-of-the-art concentrator solar cells

“…One can see similarity of the curves recorded at higher temperature and strong difference between them in the case of the lower temperature. An evident kink of the I-V characteristics for the Types A and B cells in the region close to V oc is probably associated with occurrence of a built-in potential barrier for majority charge carriers at the n-GaInP/n-Ge isotype hetero-interface [1]. It is clear from Fig.…”

“…Additionally, extraterrestrial applications are of great importance. Here highly efficient solar cells (SCs) frequently operate at sufficiently low temperatures and intensities [1]. As a rule, the cell structures are designed specifically for terrestrial (with high sunlight concentration), or space (sometimes with relatively low concentration) applications, differing in certain, but not principal, details.…”

Влияние легирования слоев брэгговских отражателей на электрические свойства InGaAs/GaAs метаморфных фотопреобразователей

“…Voltage, V Заметные резистивные потери в A III B V ФП могут быть вызваны энергетическими барьерами треугольной формы вблизи гетерограниц, которые возникают изза разрывов валентной зоны или зоны проводимости [22][23][24]. В данном случае доминирующим механизмом протекания тока через барьер обычно является термоэлектронная эмиссия Шоттки:…”

“…5. Различия при использовании формул (4) и (5) не видны в масштабе графика.Величина разрыва зоны проводимости для гетерограницы n-InGaAs/InAlAs составляет 0.285−0.52 эВ в зависимости от доли индия в полупроводниковых материалах[24][25][26]. Полученная с учетом этого диаграмма Зависимость эквивалентного сопротивления одного периода БО RDBR в метаморфной гетероструктуре с долей индия 24%, легированной кремнием: 1 -результаты измерений, 2 -аппроксимация по формулам (3) и (5), 3 -аппроксимация по формуле (4).…”

Measuring complex for studying cascade solar photovoltaic cells and concentrator modules on their basis

“…The main stages of this technological chain are the epitax ial growth of multilayer nanoheterostructure PVCs and their post growth processing [3], fabrication of concentrator Fresnel lens panels and concentrator modules [4], and design of automated sun tracking systems [5]. In addition, we faced the problem of designing application specific measuring com plexes-solar simulators and measuring electronic units that can be used both in the laboratory and in the industry.…”