High-k gate dielectrics with ultra-low leakage current based on praseodymium oxide

Osten, H. J.; Liu, J.P.; Gaworzewski, P.; Bugiel, E.; Zaumseil, P.

doi:10.1109/iedm.2000.904404

Cited by 65 publications

(66 citation statements)

References 2 publications

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“…% Er), have been shown to display an even higher dielectric constant (j ¼ 33-37.6). 5,6 Also, Er 2 O 3 thin films exhibit a relatively large conduction band offset on silicon (> 2 eV), 2,4,7,8 and a lattice constant that is conducive to epitaxial growth on Si (the Er 2 O 3 lattice constant of $ 10.54 Å is about twice that of Si). 9 Similarly, erbium oxide is under active consideration as a source of efficient room-temperature light emission.…”

Section: Introductionmentioning

confidence: 99%

Optical and structural characterization of thermal oxidation effects of erbium thin films deposited by electron beam on silicon

Kamineni

Moore

et al. 2012

Journal of Applied Physics

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Thermal oxidation effects on the structural, compositional, and optical properties of erbium films deposited on silicon via electron beam evaporation were analyzed by x-ray diffraction, x-ray photoelectron spectroscopy, Auger electron spectroscopy, and spectroscopic ellipsometry. A gradual rise in oxidation temperature from 700 to 900 °C resulted in a transition from ErO- to Er2O3-rich phase. Additional increase in oxidation temperature above 1000°C led to the formation of erbium silicate due to further oxygen incorporation, as well as silicon out-diffusion from the substrate. A silicon oxide interfacial layer was also detected, with its thickness increasing with higher oxidation temperature. Additionally, film refractive index decreased, while its Tauc bandgap value increased from ∼5.2 eV to ∼6.4 eV, as the oxidation temperature was raised from 700 °C to above 900 °C. These transformations were accompanied by the appearance of an intense and broad absorption band below the optical gap. Thermal oxidation effects are discussed in the context of film structural characteristics and defect states.

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Section: Introductionmentioning

confidence: 99%

Optical and structural characterization of thermal oxidation effects of erbium thin films deposited by electron beam on silicon

Kamineni

Moore

et al. 2012

Journal of Applied Physics

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“…Fabrication of Pr 2 O 3 films on Si has been performed using molecular beam epitaxy (MBE) [14±16] and pulsed laser deposition. [17,18] Deposited Pr 2 O 3 films are potentially better than other high-k films due to the leakagecurrent densities [19] (< 10 ±8 A cm ±2 at gate voltage (V g ) = +1 V), 10 4 times lower than the observed values for HfO 2 and ZrO 2 films having the same equivalent oxide thickness of 1.4 nm. [20,21] Moreover, Osten et al [22] have reported on Pr 2 O 3 compatibility with conventional complementary metal oxide semiconductor (CMOS) processes, thus demonstrating that it is not necessary to re-engineer manufacturing procedures.…”

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confidence: 97%

A Simple Route to the Synthesis of Pr₂O₃ High‐k Thin Films

et al. 2003

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High‐quality Pr2O3 high‐k thin films with very promising electrical properties have been prepared by metal–organic chemical vapor deposition on Si(100) substrates. The most critical factor for selective and reproducible Pr2O3 film formation is the oxygen partial pressure in the reaction chamber. X‐ray (see Figure) and transmission electron microscopy diffraction patterns show that the oxide layer grows with a hexagonal random structure.

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“…[25] So far, however, studies for microelectronic applications have not been reported. In particular, the Pr 2 O 3 phase exhibits attractive features, such as a high dielectric constant (26)(27)(28)(29)(30), [26] a relatively large (3.9 eV) fundamental bandgap, [27] a symmetrical band offset 1 eV larger with respect to Si, [28] and a large formation energy (-12 900 kJ mol -1 ). [29] Praseodymium oxide layers can be grown using various routes.…”

Section: Introductionmentioning

confidence: 99%

“…The earlier physical vacuum evaporation methods adopted oxidation of the Pr metal layer. [30][31][32] Advanced methods for the fabrication of stoichiometric Pr 2 O 3 and/or PrO 2 films consist of pulsed laser deposition (PLD) [33][34][35] and molecular-beam epitaxy (MBE) [26,[36][37][38] techniques. In particular, the MBE growth of epitaxial Pr 2 O 3 films has been carried out on both Si(001) and Si (111) substrates.…”

Section: Introductionmentioning

confidence: 99%

An MOCVD Approach to High‐k Praseodymium‐Based Films

Nigro

Malandrino

Toro

et al. 2006

Chemical Vapor Deposition

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New high-k dielectric thin films have become of increasing interest over the last few years in the search for an alternative material to SiO 2 gate insulators in MOS devices. Lanthanide oxides have been studied as potential candidates for SiO 2 replacement. In this review, a description of the different CVD approaches to fabricating praseodymium oxide and silicate films with dielectric properties is presented. In particular, thermally activated and liquid-injection metal-organic (MO) CVD as well as atomic layer deposition (ALD), developed in recent years, are discussed. Examples highlighting the importance of different praseodymium precursors on the deposited phases are given. Special emphasis is placed upon deposition parameters crucial to obtain Pr 2 O 3 films and upon interfacial characterization. In addition, dielectric properties have been correlated to structural and compositional characteristics of praseodymium-containing films.

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High-k gate dielectrics with ultra-low leakage current based on praseodymium oxide

Cited by 65 publications

References 2 publications

Optical and structural characterization of thermal oxidation effects of erbium thin films deposited by electron beam on silicon

Optical and structural characterization of thermal oxidation effects of erbium thin films deposited by electron beam on silicon

A Simple Route to the Synthesis of Pr₂O₃ High‐k Thin Films

An MOCVD Approach to High‐k Praseodymium‐Based Films

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High-k gate dielectrics with ultra-low leakage current based on praseodymium oxide

Cited by 65 publications

References 2 publications

Optical and structural characterization of thermal oxidation effects of erbium thin films deposited by electron beam on silicon

Optical and structural characterization of thermal oxidation effects of erbium thin films deposited by electron beam on silicon

A Simple Route to the Synthesis of Pr2O3 High‐k Thin Films

An MOCVD Approach to High‐k Praseodymium‐Based Films

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A Simple Route to the Synthesis of Pr₂O₃ High‐k Thin Films