Thermal oxidation effects on the structural, compositional, and optical properties of erbium films deposited on silicon via electron beam evaporation were analyzed by x-ray diffraction, x-ray photoelectron spectroscopy, Auger electron spectroscopy, and spectroscopic ellipsometry. A gradual rise in oxidation temperature from 700 to 900 °C resulted in a transition from ErO- to Er2O3-rich phase. Additional increase in oxidation temperature above 1000°C led to the formation of erbium silicate due to further oxygen incorporation, as well as silicon out-diffusion from the substrate. A silicon oxide interfacial layer was also detected, with its thickness increasing with higher oxidation temperature. Additionally, film refractive index decreased, while its Tauc bandgap value increased from ∼5.2 eV to ∼6.4 eV, as the oxidation temperature was raised from 700 °C to above 900 °C. These transformations were accompanied by the appearance of an intense and broad absorption band below the optical gap. Thermal oxidation effects are discussed in the context of film structural characteristics and defect states.

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A new type of through‐silicon via (TSV) defect, silicon fin defect, which was found after the TSV deep‐reactive‐ion‐etching process at the TSV bottom is reported. These defects are considered killer TSV defects that may cause process or mechanical failures and have to be eliminated. A scanning electron microscope automatic process inspection approach, which is non‐destructive and proven to be effective, has been established to image the fin defects at the bottom of the trench. A possible root cause of this defect is also explored. Both simulation and benchmarking test results indicate that bulk micro defects (BMDs) in the silicon substrate could serve as a micro‐mask during etching and result in silicon fin defects.

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