High-K HfAlO charge trapping layer in SONOS-type nonvolatile memory device for high speed operation

Huang

2013

Jpn. J. Appl. Phys.

Gate-all-around (GAA) nanowire (NW) memory devices with a SiN-or Hf-based charge-trapping (CT) layer of the same thickness were studied in this work. The GAA NW devices were fabricated with planar thin-film transistors (TFTs) on the same substrate using a novel scheme without resorting to the use of advanced lithographic tools. Owing to their higher dielectric constant, the GAA NW devices with a HfO 2 or HfAlO CT layer show greatly enhanced programming/erasing (P/E) efficiency as compared with those with a SiN CT layer. Furthermore, the incorporation of Al into the Hf-based dielectric increases the thermal stability of the CT layer, improving retention and endurance characteristics.

Section: Introductionmentioning

confidence: 99%

Novel gate-all-around polycrystalline silicon nanowire memory device with HfAlO charge-trapping layer

Lee

Huang

2013

Jpn. J. Appl. Phys.

“…2 However, due to the large conduction and valence band offsets between the SiO 2 and the Si substrate, i.e., 3.5 and 4.4 eV, respectively, 3 the programming/erasing speed are compromised. 6 Shin et al suppressed the top electrode injection current by adding an Al 2 O 3 layer above the tunnel oxide, which increased the erasing speed. 4 Tan et al improved the programming speed and charge retention capability by replacing silicon nitride with HfAlO as the charge trapping layer.…”

Section: Introductionmentioning

confidence: 99%

Nonvolatile memory devices with AlOx embedded Zr-doped HfO2 high-k gate dielectric stack

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

Kuo

Zhang

2014

Articles you may be interested inImproved thermal stability and electrical properties of atomic layer deposited HfO2/AlN high-k gate dielectric stacks on GaAs J. Vac. Sci. Technol. A 33, 01A136 (2015); 10.1116/1.4903367 Memory functions of nanocrystalline cadmium selenide embedded ZrHfO high-k dielectric stack J. Appl. Phys. 115, 084113 (2014); 10.1063/1.4867215Band offsets of metal-oxide-semiconductor capacitor with HfLaTaO/HfSiO stacked high-k dielectric Nanocrystalline ruthenium oxide embedded zirconium-doped hafnium oxide high-k nonvolatile memories

“…However, considering the density of trap states and deep trap energy levels, hafnium oxide (HfO 2 ) is expected to be a promising candidate for the charge-trapping layer for SONOS-type NVMs instead of Si 3 N 4 film. 10) In addition, it has been reported that the oxynitride used as the tunnel oxide shows high immunity to the SILC for a longer data retention characteristic. 11,12) Various approaches to produce modified oxides have achieved varying degrees of success, such as NO, N 2 O, NH 3 , or plasma nitridation.…”

Section: Introductionmentioning

confidence: 99%

Improved Retention Characteristic in Polycrystalline Silicon–Oxide–Hafnium Oxide–Oxide–Silicon-Type Nonvolatile Memory with Robust Tunnel Oxynitride

Hsieh

Lai

et al. 2011

Jpn. J. Appl. Phys.

In this paper, we present a simple novel process for forming a robust and reliable oxynitride dielectric with a high nitrogen content. It is highly suitable for n-channel metal-oxide-semiconductor field-effect transistor (nMOSFETs) and polycrystalline silicon-oxide-hafnium oxide-oxidesilicon (SOHOS)-type memory applications. The proposed approach is realized by using chemical oxide with ammonia (NH 3) nitridation followed by reoxidation with oxygen (O 2). The novel oxynitride process is not only compatible with the standard complementary metal-oxidesemiconductor (CMOS) process, but also can ensure the improvement of flash memory with low-cost manufacturing. The characteristics of nMOSFETs and SOHOS-type nonvolatile memories (NVMs) with a robust oxynitride as a gate oxide or tunnel oxide are studied to demonstrate their advantages such as the retardation of the stress-induced trap generation during constant-voltage stress (CVS), the program/erase behaviors, cycling endurance, and data retention. The results indicate that the proposed robust oxynitride is suitable for future nonvolatile flash memory technology application.