High magnetic field studies of AlGaN/GaN heterostructures grown on bulk GaN

Siekacz, M.; Dybko, K.; Skierbiszewski, C.; Knap, W.; Wasilewski, Z. R.; Maude, D. K.; Łusakowski, J.; Krupczyński, W.; Nowak, G.; Boćkowski, M.; Porowski, S.

doi:10.1002/pssc.200460451

Cited by 3 publications

(2 citation statements)

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“…With regard to the RT, it was not long ago that the maximum reported mobility was slightly below 2000 cm 2 /(V s) [25], followed by theoretical prediction that optical phonons scattering mechanism limit is around 2000 cm 2 /(V s) [26]. The exception to this trend was given by our experiments on the GaN/AlGaN heterostructures grown on the bulk, low dislocation GaN substrates revealed mobility over 2500 cm 2 /(V s) [17,27]. In Fig.…”

Section: Two-dimensional Electron Gas On Gan/algan Interfacecontrasting

confidence: 42%

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From High Electron Mobility GaN/AlGaN Heterostructures to Blue-Violet InGaN Laser Diodes. Perspectives of MBE for Nitride Optoelectronics

Skierbiszewski

2005

Acta Phys. Pol. A

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The recent progress in growth of nitride based semiconductor structures made by plasma assisted MBE is presented. This technology is ammonia free and nitrogen for growth is activated in RF plasma source from nitrogen molecules. The new growth mechanism -adlayer enhanced lateral diffusion of adatoms on semiconductor surface is studied in plasma assisted MBE. This mechanism enables us to achieve high quality step-flow epitaxy at temperatures 600−750• C, much lower than expected from classical estimates based on the melting point of GaN. We show that growth at low temperatures in metal rich (gallium or indium) regime, together with use of low dislocation bulk GaN substrates, results in high quality of (In, Al, Ga)N layers and sharp interfaces. We demonstrate record high mobility of two-dimensional electron gas at GaN/AlGaN interface (with mobility exceeding 100 000 cm 2 /(V s) at 4.2 K and 2500 cm 2 /(V s) at 300 K) and report on first blue-violet InGaN multiquantum well laser diodes, operating in 407-422 nm wavelengths range. In this paper, we discuss also properties of strain compensated InAlN/InGaN multiquantum wells grown by plasma assisted MBE which are very attractive for telecommunication applications at 1.5 µm wavelengths like electro-optical modulators or all-optical switches.

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Section: Two-dimensional Electron Gas On Gan/algan Interfacecontrasting

confidence: 42%

“…As we have recently shown [17,27], samples with high electron mobility 2DEG enable fundamental studies of the quantum and many-body effects such as fractional quantum Hall effect, spin-related phenomena and magnetoexcitons.…”

Section: Two-dimensional Electron Gas On Gan/algan Interfacementioning

confidence: 99%

From High Electron Mobility GaN/AlGaN Heterostructures to Blue-Violet InGaN Laser Diodes. Perspectives of MBE for Nitride Optoelectronics

Skierbiszewski

2005

Acta Phys. Pol. A

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Carrier Transport

Morkoç

2008

Handbook of Nitride Semiconductors and Devices

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Different temperature dependence of carrier transport properties between Al _x Ga _{1–
x} N/In _y Ga _{1–
y}

Song¹,

Xu²,

Cheng-Cheng³

et al. 2011

Chinese Phys. B

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The temperature dependence of carrier transport properties of AlxGa 1−x N/InyGa 1−y N/GaN and AlxGa 1−x N/GaN heterostructures has been investigated.It is shown that the Hall mobility in Al 0.25 Ga 0.75 N/In 0.03 Ga 0.97 N/GaN heterostructures is higher than that in Al 0.25 Ga 0.75 N/GaN heterostructures at temperatures above 500 K, even the mobility in the former is much lower than that in the latter at 300 K. More importantly, the electron sheet density in Al 0.25 Ga 0.75 N/In 0.03 Ga 0.97 N/GaN heterostructures decreases slightly, whereas the electron sheet density in Al 0.25 Ga 0.75 N/GaN heterostructures gradually increases with increasing temperature above 500 K. It is believed that an electron depletion layer is formed due to the negative polarization charges at the InyGa 1−y N/GaN heterointerface induced by the compressive strain in the InyGa 1−y N channel, which effectively suppresses the parallel conductivity originating from the thermal excitation in the underlying GaN layer at high temperatures.

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High magnetic field studies of AlGaN/GaN heterostructures grown on bulk GaN

Cited by 3 publications

References 14 publications

From High Electron Mobility GaN/AlGaN Heterostructures to Blue-Violet InGaN Laser Diodes. Perspectives of MBE for Nitride Optoelectronics

From High Electron Mobility GaN/AlGaN Heterostructures to Blue-Violet InGaN Laser Diodes. Perspectives of MBE for Nitride Optoelectronics

Carrier Transport

Different temperature dependence of carrier transport properties between Al _x Ga _{1–
x} N/In _y Ga _{1–
y}

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High magnetic field studies of AlGaN/GaN heterostructures grown on bulk GaN

Cited by 3 publications

References 14 publications

From High Electron Mobility GaN/AlGaN Heterostructures to Blue-Violet InGaN Laser Diodes. Perspectives of MBE for Nitride Optoelectronics

From High Electron Mobility GaN/AlGaN Heterostructures to Blue-Violet InGaN Laser Diodes. Perspectives of MBE for Nitride Optoelectronics

Carrier Transport

Different temperature dependence of carrier transport properties between Al x Ga 1– x N/In y Ga 1– y

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Product

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About

Different temperature dependence of carrier transport properties between Al _x Ga _{1–
x} N/In _y Ga _{1–
y}