High-Mobility GeSn n-Channel MOSFETs by Low-Temperature Chemical Vapor Deposition and Microwave Annealing

Liu, Tzu-Hung; Chiu, Po-Yuan; Chuang, Yen; Liu, Chia-You; Shen, Chang‐Hong; Luo, Guang-Li; Li, Jiun-Yun

doi:10.1109/led.2018.2808167

Cited by 21 publications

(11 citation statements)

References 27 publications

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“…Several key factors have contributed to the advancement of Ge 1‑ x Sn x , such as the ability to tune its band gap as a function of Sn concentration, , along with higher electron and hole mobility compared to Si and Ge, and easy integration into the already well-established Si manufacturing technology platforms. Ge 1‑ x Sn x alloys enable a heterogeneous material system usable both for optoelectronic purposes, e.g., lasers , and photodetectors, , or for high-speed electronic devices. , …”

Section: Introductionmentioning

confidence: 99%

Field-Effect Transistor Figures of Merit for Vapor–Liquid–Solid-Grown Ge_1-xSn_x (x = 0.03–0.09) Nanowire Devices

Galluccio

Doherty

Biswas

et al. 2020

ACS Appl. Electron. Mater.

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Ge1‑x Sn x alloys form a heterogeneous material system with high potential for applications in both optoelectronic and high-speed electronics devices. The attractiveness of Ge1‑x Sn x lies in the ability to tune the semiconductor band gap and electronic properties as a function of Sn concentration. Advances in Ge1‑x Sn x material synthesis have raised expectations recently, but there are considerable problems in terms of device demonstration. Although Ge1‑x Sn x thin films have been previously explored experimentally, in-depth studies of the electrical properties of Ge1‑x Sn x nanostructures are very limited, specifically those on nanowires grown via a bottom-up vapor–liquid–solid (VLS) process using metal catalysts. In this study, a detailed electrical investigation is presented of nominally undoped Ge1‑x Sn x bottom-up-grown nanowire devices with different Sn percentages (3–9 at. %). The entire device fabrication process is performed at relatively low temperatures, the maximum temperature being 440 °C. Device current modulation is performed through backgating from a substrate electrode, achieving impressive on–off current (I ON/I OFF) ratios of up to 104, showing their potential for electronic and sensor-based applications. Contact resistance (R C) extraction is essential for proper VLS-grown nanowire device electrical evaluation. Once the R C contribution is extracted and removed, parameter values such as mobility can change significantly, by up to 70% in this work. When benchmarked against other Ge1‑x Sn x electronic devices, the VLS-grown nanowire devices have potential in applications where a high I ON/I OFF ratio is important and where thermal budget and processing temperatures are required to be kept to minimum.

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Section: Introductionmentioning

confidence: 99%

Field-Effect Transistor Figures of Merit for Vapor–Liquid–Solid-Grown Ge_1-xSn_x (x = 0.03–0.09) Nanowire Devices

Galluccio

Doherty

Biswas

et al. 2020

ACS Appl. Electron. Mater.

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“…Recently, the development of high‐quality GeSn epitaxial films has led to emergence of high‐performance electronic and optoelectronic devices, such as metal–oxide–semiconductor field effect transistors, [ 21 ] photodetectors, [ 22 ] and lasers. [ 23 ] However, there is limited work focusing on the quantum properties of 2D carriers in GeSn‐based structures.…”

Section: Introductionmentioning

confidence: 99%

Strain Effects on Rashba Spin‐Orbit Coupling of 2D Hole Gases in GeSn/Ge Heterostructures

et al. 2021

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A demonstration of 2D hole gases in GeSn/Ge heterostructures with a mobility as high as 20 000 cm2 V−1 s−1 is given. Both the Shubnikov–de Haas oscillations and integer quantum Hall effect are observed, indicating high sample quality. The Rashba spin‐orbit coupling (SOC) is investigated via magneto‐transport. Further, a transition from weak localization to weak anti‐localization is observed, which shows the tunability of the SOC strength by gating. The magneto‐transport data are fitted to the Hikami–Larkin–Nagaoka formula. The phase‐coherence and spin‐relaxation times, as well as spin‐splitting energy and Rashba coefficient of the k‐cubic term, are extracted. The analysis reveals that the effects of strain and confinement potential at a high fraction of Sn suppress the Rashba SOC caused by the GeSn/Ge heterostructures.

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“…GeSn alloys are potential candidates for MIR photodetection in various applications [10]. The unique advantages of complementary metal-oxide-semiconductor (CMOS) compatibility, high electron and hole mobility (μ p ) [11]- [17], larger absorption spectra [18], and the direct nature of bandgap for bulk GeSn with an Sn content >6% make GeSn alloys [19], [20] attractive candidates for MIR applications. Despite the limited solid solubility of Sn in Ge, Ge 1−x Sn x alloys with Sn concentrations up to 28% have been grown on an Si substrate using low-temperature growth techniques, such as molecular beam epitaxy, chemical vapor deposition (CVD) [21], and sputtering epitaxy [22] techniques.…”

Section: Introductionmentioning

confidence: 99%

Impact of Temperature and Doping on the Performance of ${{\bf Ge}}/{{\bf G}}{{{\bf e}}_{1 - {\boldsymbol{x}}}}{{\bf S}}{{{\bf n}}_{\boldsymbol{x}}}/{{\bf Ge}}$ Heterojunction Phototransistors

2020

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We study the effect of temperature and doping in Si-based GeSn heterojunction phototransistors (HPTs) for low-power-consuming, low-cost, and high-speed mid-infrared (MIR) applications. The incorporation of Ge 1−x Sn x alloy in the base of our HPTs significantly shortens the emitter-to-collector transit time, leading to high cutoff frequency (f T) due to an increase in mobility. Furthermore, the Ge 1−x Sn x base extends the optical detection over a wide range (up to 2500 nm) due to the shrinkage of the bandgap energy caused by alloying with Sn. Additionally, spectral responsivity increases with Sn alloying due to the increased absorption coefficient. Our results show that f T and responsivity are strongly dependent not only on doping but also on temperature. The impact of temperature on the noise behavior of phototransistors was also analyzed for frequencies up to 100 GHz. As the temperature increased, the signal-to-noise ratio (SNR) decreased; however, spectral responsivity significantly improved. The high SNR, responsivity, and f T values of the GeSn HPT make it a potential candidate for future Si-based uncooled high-speed MIR photodetection.

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High-Mobility GeSn n-Channel MOSFETs by Low-Temperature Chemical Vapor Deposition and Microwave Annealing

Cited by 21 publications

References 27 publications

Field-Effect Transistor Figures of Merit for Vapor–Liquid–Solid-Grown Ge_1-xSn_x (x = 0.03–0.09) Nanowire Devices

Field-Effect Transistor Figures of Merit for Vapor–Liquid–Solid-Grown Ge_1-xSn_x (x = 0.03–0.09) Nanowire Devices

Strain Effects on Rashba Spin‐Orbit Coupling of 2D Hole Gases in GeSn/Ge Heterostructures

Impact of Temperature and Doping on the Performance of ${{\bf Ge}}/{{\bf G}}{{{\bf e}}_{1 - {\boldsymbol{x}}}}{{\bf S}}{{{\bf n}}_{\boldsymbol{x}}}/{{\bf Ge}}$ Heterojunction Phototransistors

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High-Mobility GeSn n-Channel MOSFETs by Low-Temperature Chemical Vapor Deposition and Microwave Annealing

Cited by 21 publications

References 27 publications

Field-Effect Transistor Figures of Merit for Vapor–Liquid–Solid-Grown Ge1-xSnx (x = 0.03–0.09) Nanowire Devices

Field-Effect Transistor Figures of Merit for Vapor–Liquid–Solid-Grown Ge1-xSnx (x = 0.03–0.09) Nanowire Devices

Strain Effects on Rashba Spin‐Orbit Coupling of 2D Hole Gases in GeSn/Ge Heterostructures

Impact of Temperature and Doping on the Performance of ${{\bf Ge}}/{{\bf G}}{{{\bf e}}_{1 - {\boldsymbol{x}}}}{{\bf S}}{{{\bf n}}_{\boldsymbol{x}}}/{{\bf Ge}}$ Heterojunction Phototransistors

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Field-Effect Transistor Figures of Merit for Vapor–Liquid–Solid-Grown Ge_1-xSn_x (x = 0.03–0.09) Nanowire Devices

Field-Effect Transistor Figures of Merit for Vapor–Liquid–Solid-Grown Ge_1-xSn_x (x = 0.03–0.09) Nanowire Devices