High-Mobility, Wet-Transferred Graphene Grown by Chemical Vapor Deposition

Abstract

‡) equal contributionWe report high room-temperature mobility in single layer graphene grown by Chemical Vapor Deposition (CVD) after wet transfer on SiO2 and hexagonal boron nitride (hBN) encapsulation. By removing contaminations trapped at the interfaces between single-crystal graphene and hBN, we achieve mobilities up to∼ 70000cm 2 V −1 s −1 at room temperature and∼ 120000cm 2 V −1 s −1 at 9K. These are over twice those of previous wet transferred graphene and comparable to samples prepared by dry transfer. We also investigate the combined approach of thermal annealing and encapsulation in polycrystalline graphene, achieving room temperature mobilities∼ 30000cm 2 V −1 s −1 . These results show that, with appropriate encapsulation and cleaning, room temperature mobilities well above 10000cm 2 V −1 s −1 can be obtained in samples grown by CVD and transferred using a conventional, easily scalable PMMA-based wet approach. * al515@cam.ac.uk[1] S. M. Sze and K. K. Ng, Physics of semiconductor devices, (John Wiley & Sons, 2006).

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