High operating temperature midwave infrared photodiodes and focal plane arrays based on type-II InAs/GaSb superlattices

Pour, Siamak Abdollahi; Huang, Edward Kwei Wei; Chen, G.; Haddadi, Abbas; Nguyen, Binh‐Minh; Razeghi, Manijeh

doi:10.1063/1.3573867

Cited by 105 publications

(40 citation statements)

References 10 publications

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“…At 150 K, the D* is 2.5 Â 10 11 Jones, which is comparable to state-of-art values. 7,8 Table I summarizes the optical and electrical performance of all samples at different temperatures. The dark current density at À50 mV are 1.2 Â 10 À4 A/cm 2 at 200 K, and the extracted R 0 A is 410 X cm 2 , corresponding to a Johnson-noise limited D* of 3.77 Â 10 10 Jones at 4.0 lm.…”

Section: B Electrical Propertiesmentioning

confidence: 99%

“…INTRODUCTION Infrared (IR) photodetectors based on type-II InAs/GaSb superlattice (SL) structures have drawn much research interest, and are suitable for high-resolution thermal imaging applications. [1][2][3][4][5][6][7][8] The flexibility of the nearly lattice-matched AlSb/InAs/GaSb material system has allowed the development of many advanced concepts and designs, including double heterostructures with graded-gap W-structure 1 and Mstructure, 2 as well as unipolar-barrier detectors such as nBn, 3 pMp, 4 and complementary-barrier IR detectors (CBIRD). 5 The development of detectors based on these designs has resulted in devices that are comparable to the state-of-the-art mid-IR detectors, and has also given researchers a better understanding of how to exploit the properties of the type-II SL material in optimizing detectors for various applications.…”

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confidence: 99%

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Interband cascade infrared photodetectors with enhanced electron barriers and p-type superlattice absorbers

Tian¹,

Hinkey²,

Yang³

et al. 2012

Journal of Applied Physics

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We present results on the optical and electrical performance of mid-infrared detectors based on interband-cascade structures. These devices include enhanced electron barriers, designed to suppress intraband-tunneling current between stages, and p-doped type-II InAs/GaSb superlattice absorbers. Within the sample set, we examined devices with different absorber thicknesses and doping levels. Carriers are extracted less efficiently in devices with longer absorbers, which is attributed to more band bending within the absorber due to electric charge accumulation. Also, devices with lower-doped (1 × 1017 cm−3) absorbers are found to have better optical and electrical performances than those with higher levels of doping (3 × 1017 cm−3). The overall performance of these devices was superior to previously reported results, with Johnson-noise limited detectivities, at 4.0 μm, as high as 6.0 × 1012 and 2.5 × 1011 Jones at 80 and 150 K, respectively.

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Section: B Electrical Propertiesmentioning

confidence: 99%

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confidence: 99%

Interband cascade infrared photodetectors with enhanced electron barriers and p-type superlattice absorbers

Tian¹,

Hinkey²,

Yang³

et al. 2012

Journal of Applied Physics

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“…Based on the stability and robustness of the mature III-V compound technology, T2SL has demonstrated the feasibility of covering a large infrared detection range, from SWIR to VLWIR [4][5][6], [7] and the capability of growing complex devices with different superlattice structures such as W-structure [8], M-structure [9]. T2SL material system, has demonstrated high performance SWIR [4] and MWIR [5] photodetectors, as well as the dual-band LWIR-LWIR, MWIR-LWIR, MWIR-MWIR photodetectors [10], [11], [12] and imaging [13], [14], [15]. However, up to date, no dual-band SWIR-MWIR photodetector performance has been reported yet.…”

Section: Introductionmentioning

confidence: 99%

High performance bias-selectable dual-band short-/mid-wavelength infrared photodetectors based on type-II InAs/GaSb/AlSb superlattices

Hoang¹,

Chen²,

Haddadi³

et al. 2013

Quantum Sensing and Nanophotonic Devices X

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Active and passive imaging in a single camera based on the combination of short-wavelength and mid-wavelength infrared detection is highly needed in a number of tracking and reconnaissance missions. Due to its versatility in band-gap engineering, Type-II InAs/GaSb/AlSb superlattice has emerged as a candidate highly suitable for this multi-spectral detection.In this paper, we report the demonstration of high performance bias-selectable dual-band short-/mid-wavelength infrared photodetectors based on InAs/GaSb/AlSb type-II superlattice with designed cut-off wavelengths of 2 μm and 4 μm. Taking advantages of the high performance short-wavelength and mid-wavelength single color photodetectors, back-to-back p-i-n-n-i-p photodiode structures were grown on GaSb substrate by molecular beam epitaxy. At 150 K, the short-wave channel exhibited a quantum efficiency of 55%, a dark current density of 1.0x10 -9 A/cm 2 at -50 mV bias voltage, providing an associated shot noise detectivity of 3.0x10 13 Jones. The mid-wavelength channel exhibited a quantum efficiency of 33% and a dark current density of 2.6x10 -5 A/cm 2 at 300 mV bias voltage, resulting in a detectivity of 4.0x10 11 Jones. The operations of the two absorber channels are selectable by changing the polarity of applied bias voltage.

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“…The M-structure barrier design consisted of 10/1/ 5/1 MLs of InAs/GaSb/AlSb/GaSb, respectively, and a GaAs interface in each period. 10 Two samples with similar structural design were grown on n-type GaSb substrates. The only difference between the two samples was the doping of the superlattice bottom p-contact.…”

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Effect of contact doping in superlattice-based minority carrier unipolar detectors

Nguyen¹,

Chen²,

Hoang³

et al. 2011

Applied Physics Letters

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We report the influence of the contact doping profile on the performance of superlattice-based minority carrier unipolar devices for mid-wave infrared detection. Unlike in a photodiode, the space charge in the p-contact of a pMp unipolar device is formed with accumulated mobile carriers, resulting in higher dark current in the device with highly doped p-contact. By reducing the doping concentration in the contact layer, the dark current is decreased by one order of magnitude. At 150 K, 4.9 μm cut-off devices exhibit a dark current of 2 × 10−5A/cm2 and a quantum efficiency of 44%. The resulting specific detectivity is 6.2 × 1011 cm Hz1/2/W at 150 K and exceeds 1.9 × 1014 cm Hz1/2/W at 77 K.

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High operating temperature midwave infrared photodiodes and focal plane arrays based on type-II InAs/GaSb superlattices

Cited by 105 publications

References 10 publications

Interband cascade infrared photodetectors with enhanced electron barriers and p-type superlattice absorbers

Interband cascade infrared photodetectors with enhanced electron barriers and p-type superlattice absorbers

High performance bias-selectable dual-band short-/mid-wavelength infrared photodetectors based on type-II InAs/GaSb/AlSb superlattices

Effect of contact doping in superlattice-based minority carrier unipolar detectors

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