High Performance 1.2kV-2.5kV 4H-SiC MOSFETs with Excellent Process Capability and Robustness

Abstract

In this paper, we show state of the art, low on-resistance, 25mW/1.2kV and 43mW/2.5kV SiC MOSFETs with excellent design robustness and process control such that the parametric spread of key device characteristics are approaching Si products. The impact of starting material variability on device performance is shown and design sensitivity curves are presented.

SiC Charge-Balanced Devices Offering Breakthrough Performance Surpassing the 1-D Ron versus BV Limit

“…SiC unipolar devices (MOSFETs, JFETs and JBS Diodes) offer the benefit of (up to 10x) lower switching losses compared to Si bipolar diodes and IGBTs. For lower voltage applications 650V-2.5kV [1][2][3], these SiC devices also typically offer lower conduction loss as well. However, for device ratings typically found in railway traction and medium voltage converter applications, the conduction loss associated with SiC unipolar devices' drift layers at elevated temperature is often marginally better or even worse than Si IGBTs or diodes [4][5].…”