High performance 70 nm CMOS device and key technologies

Xu, Qing; Qian, He; Huaxiang, Yin; Lin, Jenshan; Ji, Honghao; Chen, Baoqin; Zhu, Ye; Liu, Min

doi:10.1109/icsict.2001.981426

Cited by 1 publication

(1 citation statement)

References 6 publications

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“…The thin gate oxide RF PDSOI nMOSFETs were fabricated on SIMOX (separation by implantation of oxygen) wafers with an SOI film (p-type <100>, 20 Ω) thickness of 200 nm and a buried oxide layer of 400 nm. A summary of the major processing steps of the technology, which are based on the platform of 0.1 µm CMOS technology developed by the Institute of Microelectronics of Chinese Academy of Sciences [15] , is given as follows. Prior to the device fabrication, a LOCOS (local oxidation of silicon) approach was employed to isolate the MOSFETs; after that, maskless BF + 2 ion implants with energy 80 keV and dose 2 × 10 12 cm −2 and B + ion implants with energy 70 keV and dose 4×10 13 cm −2 were employed for front gate threshold voltage adjustment and anti-punch through purpose, respectively.…”

Section: Methodsmentioning

confidence: 99%

Effect of total ionizing dose radiation on the 0.25 μm RF PDSOI nMOSFETs with thin gate oxide

Liu

Han

et al. 2009

J. Semicond.

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Thin gate oxide radio frequency (RF) PDSOI nMOSFETs that are suitable for integration with 0.1 μm SOI CMOS technology are fabricated, and the total ionizing dose radiation responses of the nMOSFETs having four different device structures are characterized and compared for an equivalent gamma dose up to 1 Mrad (Si), using the front and back gate threshold voltages, off-state leakage, transconductance and output characteristics to assess direct current (DC) performance. Moreover, the frequency response of these devices under total ionizing dose radiation is presented, such as small-signal current gain and maximum available/stable gain. The results indicate that all the RF PDSOI nMOSFETs show significant degradation in both DC and RF characteristics after radiation, in particular to the float body nMOS. By comparison with the gate backside body contact (GBBC) structure and the body tied to source (BTS) contact structure, the low barrier body contact (LBBC) structure is more effective and excellent in the hardness of total ionizing dose radiation although there are some sacrifices in drive current, switching speed and high frequency response.

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Section: Methodsmentioning

confidence: 99%