High performance complementary Ge peaking FinFETs by room temperature neutral beam oxidation for sub-7 nm technology node applications

Lee, Y.-J.; Hong, Tzu-Chieh; Hsueh, Fu-Kuo; Sung, Po-Jung; Chen, C.-Y.; Chuang, Shang-Shiun; Cho, T.-C.; Noda, Shuichi; Tsou, Y.-C.; Kao, Kuo-Hsing; Wu, Chien-Ting; Yu, Tien-Han; Jian, Yi-Ling; Su, Chun-Jung; Huang, Yao-Ming; Huang, Wei‐Hsiang; Chen, Bailiang; Chen, M.-C.; Huang, Kun-Ping; Li, J.-Y.; Chen, Mei‐Jyh; Li, Y.; Samukawa, Seiji; Wu, Wen−Fa; Huang, Guo–Wei; Shieh, Jia‐Min; Tseng, Tseung‐Yuen; Chao, Tien−Sheng; Wang, Y.-H.; Yeh, Wen–Kuan

doi:10.1109/iedm.2016.7838535

Cited by 12 publications

(7 citation statements)

References 4 publications

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“…The possible options for technology improvement include the reduction of source/drain series resistance that is responsible for a degradation of the transistor on-current by 30%-40%, 1,2 the use of semiconductors alternative to silicon, [2][3][4][5][6][7][8] the introduction of stressors, 9,10 and the development of device architectures beyond planar FETs such as multi-gate FETs (MuGFETs). 7,9,11 In particular, for CMOS generations beyond the 7-nm node, gate-all-around (GAA) nanowire FETs appear to be the most promising architecture. 1,2,5,[12][13][14][15] However, nanowire transistors still face significant challenges and, due to the high surface-tovolume ratio, the performance of these devices is strongly influenced by surface roughness (SR) and interface defects.…”

Section: Introductionmentioning

confidence: 99%

Improved surface-roughness scattering and mobility models for multi-gate FETs with arbitrary cross-section and biasing scheme

Lizzit

Badami

Specogna

et al. 2017

Journal of Applied Physics

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We present a new model for surface roughness (SR) scattering in n-type multi-gate FETs (MuGFETs) and gate-all-around nanowire FETs with fairly arbitrary cross-sections, its implementation in a complete device simulator, and the validation against experimental electron mobility data. The model describes the SR scattering matrix elements as non-linear transformations of interface fluctuations, which strongly influences the root mean square value of the roughness required to reproduce experimental mobility data. Mobility simulations are performed via the deterministic solution of the Boltzmann transport equation for a 1D-electron gas and including the most relevant scattering mechanisms for electronic transport, such as acoustic, polar, and non-polar optical phonon scattering, Coulomb scattering, and SR scattering. Simulation results show the importance of accounting for arbitrary cross-sections and biasing conditions when compared to experimental data. We also discuss how mobility is affected by the shape of the cross-section as well as by its area in gate-all-around and tri-gate MuGFETs. © 2017 Author(s)

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Section: Introductionmentioning

confidence: 99%

Improved surface-roughness scattering and mobility models for multi-gate FETs with arbitrary cross-section and biasing scheme

Lizzit

Badami

Specogna

et al. 2017

Journal of Applied Physics

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“…With respect to plasmaenhanced ALE, these techniques can be classified into ion energy assisted etch methods to directionally etch Si, SiO 2 , Si 3 N 4 , and organic polymers. Neutral-beam-enhanced ALE (NBALE) has attracted attention as one method to address the challenges of atomic precision plasma processing because of eliminating the incidence of charged particles and UV photons on the substrate [65,66]. These attributes enable precise nanoprocessing, while suppressing the formation of defects at the atomic layer level.…”

Section: Current and Future Challengesmentioning

confidence: 99%

The 2022 Plasma Roadmap: low temperature plasma science and technology

Adamovich

Agarwal

Ahedo

et al. 2022

J. Phys. D: Appl. Phys.

255

139

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The 2022 Roadmap is the next update in the series of Plasma Roadmaps published by Journal of Physics D with the intent to identify important outstanding challenges in the field of low-temperature plasma (LTP) physics and technology. The format of the Roadmap is the same as the previous Roadmaps representing the visions of 41 leading experts representing 21 countries and five continents in the various sub-fields of LTP science and technology. In recognition of the evolution in the field, several new topics have been introduced or given more prominence. These new topics and emphasis highlight increased interests in plasma-enabled additive manufacturing, soft materials, electrification of chemical conversions, plasma propulsion, extreme plasma regimes, plasmas in hypersonics, data-driven plasma science and technology and the contribution of LTP to combat COVID-19. In the last few decades, LTP science and technology has made a tremendously positive impact on our society. It is our hope that this roadmap will help continue this excellent track record over the next 5–10 years.

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“…Interlayer Composite Materials Daisuke Ohori, 1,4,5 Min-Hui Chuang, 4 Asahi Sato, 1 Sou Takeuchi, 1 Masayuki Murata, 3 Atsushi Yamamoto, 3 Ming-Yi Lee, 4 Kazuhiko Endo, 3 Yiming Li, 4,5,6,7,8 Jenn-Hwan Tarng, 4,5,6,7 Yao-Jen Lee, 9 and Seiji Samukawa 1,2,3,5,7…”

Section: Management Of Phonon Transport In Lateral Direction For Gap-controlled Si Nanopillar/sigementioning

confidence: 99%

“…In general, semiconductor devices need to have low heat generation and low power consumption. To improve the performance of the semiconductor device, a metal-oxide-semiconductor fieldeffect transistor (MOSFET) was designed with miniaturization, changing the structure from planer to Fin and nanosheet, and considering the material such as germanium [7][8][9]. In MOSFET, there are three causes of electron mobility reduction: Coulomb, roughness, and phonons.…”

Section: Introductionmentioning

confidence: 99%

Management of Phonon Transport in Lateral Direction for Gap-Controlled Si Nanopillar/SiGe Interlayer Composite Materials

Ohori¹,

Chuang²,

Asahi³

et al. 2021

IEEE Open J. Nanotechnol.

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The phonon transport in the lateral direction for gap-controlled Si nanopillar (NP) /SiGe interlayer composite materials was investigated to eliminate heat generation in the channel area for advanced MOS transistors. The gap-controlled Si NP/SiGe composite layer showed 1/250 times lower thermal conductivity than Si bulk. Then, the phonon transport behavior in lateral direction could be predicted by the combination between the 3-omega measurement method for thermal conductivity and the Landauer approach for phonon transport in Si NP/Si0.7Ge0.3 interlayer composite structure. We found that the NP structure could regulate the phonon transport in the lateral direction by changing the NP gaps by preventing the phonon transportation from the drain region and the potential heat generation. As such, this structure achieves the first step toward phonon transport management in the same electron transportation direction of planar-type MOSFETs and represents a promising solution to heat generation for advanced CMOS devices.

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High performance complementary Ge peaking FinFETs by room temperature neutral beam oxidation for sub-7 nm technology node applications

Cited by 12 publications

References 4 publications

Improved surface-roughness scattering and mobility models for multi-gate FETs with arbitrary cross-section and biasing scheme

Improved surface-roughness scattering and mobility models for multi-gate FETs with arbitrary cross-section and biasing scheme

The 2022 Plasma Roadmap: low temperature plasma science and technology

Management of Phonon Transport in Lateral Direction for Gap-Controlled Si Nanopillar/SiGe Interlayer Composite Materials

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