High Performance GAA SNWT with a Triangular Cross Section: Simulation and Experiments

Li, Ming; Gong, Chen; Huang, Ru

doi:10.3390/app8091553

Cited by 6 publications

(3 citation statements)

References 15 publications

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“…The Silicon Nanowire Transistor (SiNWT), which is likely to be the successor to FET-based nanoscale devices, is a basic device that is used in the performance research of simplicity and complexity. However, the parameters of the SiNWT (channel length, diameter, nanowire size, and nanowire gap) are impacted and the performance of the transistor degrades when the SiNWT's dimensions (length and diameter) decrease [14]. These SiNWTs can be optimized as prospective research instruments for bio molecular interactions and electro covalent interactions because of their ultrasensitive, selective, label-free detection capabilities, as highlighted in several literature publications [12].…”

Section: Introductionmentioning

confidence: 99%

The Effect of Nanowire Gap for Silicon Nanowire Transistor to the Current-Voltage (I-Vds)

Abdullah,

Yaacob,

Alias

et al. 2023

JST

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One-dimensional structures are attracting a lot of attention for optimizing applications as one of the most sensitive devices. Among the fabricated devices, silicon nanowires (SiNW) and silicon nanowire transistors (SiNWT) are of particular importance for promising applications fabricated using bottom-up or top-down approaches to nanoscale devices. In this paper, the sensitivity of the current-voltage characteristic to the nanowire gap of a silicon nanowire transistor (SiNWT) was analyzed. SiNWTs with different nanowire gaps were fabricated using scanning probe microscopy by local anodic oxidation (LOA). Varies gaps can be occurring during the fabrication processes and its can be controlled by RASTER programming in LAO. These gaps can give different results of the sensitivity to the volt-ampere response. However, these gaps can be neglected depending on the subject of the studies and important to the other study, especially in nano particle sensors. In this experiment, the nanowires gaps were developed in the range of 100.5-435.6 nm and had been plotted the measurement data with the volt-ampere response. The data was analyzed using a semiconductor analyzer connected to a HP 4156C SPA series software analysis model from Desert Cryogenics. From the results had been measured the Current-Voltage (IV) increases proportionally with the nanowire gap distance in the SINWT device and this results will give significant effects to the application in nanoparticle sensors

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Section: Introductionmentioning

confidence: 99%

The Effect of Nanowire Gap for Silicon Nanowire Transistor to the Current-Voltage (I-Vds)

Abdullah,

Yaacob,

Alias

et al. 2023

JST

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“…Producing different structures within a single process can also increase the efficiency and reliability of the fabrication, reducing variability between devices. <100> oriented substrates are commonly used for the fabrication of triangular structures by wet etching 17,18 . Fabrication of rectangular structures can be achieved on the same substrates by dry etching 19 .…”

Section: Introductionmentioning

confidence: 99%

Single step fabrication of Silicon resistors on SOI substrate used as Thermistors

Rollo

Rani

Olthuis

et al. 2019

Sci Rep

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Temperature sensing is one of the important features of Micro Electro Mechanical Systems and a monolithic integration provides advantages for both fabrication simplicity and performance. The use of Silicon On Insulator substrates allows simple fabrication of integrated wires that can be used as thermistors. We fabricated rectangular and triangular silicon wires with different dimensions in a single step fabrication process based on the wet etching of a <110> Silicon On Insulator substrate. We determined the experimental resistivity of the two kinds of devices and tested their performance as thermistors in a temperature range between 24 and 100 °C. The accuracy and normalized sensitivities of our devices were 0.4 °C and 0.3–0.5%/°C, respectively. The potential of the proposed method resides in the possibility of having devices with different shapes in a single straightforward process.

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“…Owing to their unique characteristics such as small size, light weight, low cost, flexibility, fast response, stability, and ability for further downscaling, silicon nanowire field effect transistor (SiNW-FET) can serve as an ideal nanosensor [13][14][15][16]. It is the most likely successor to FET-based nanoscale devices [17]. However, as the dimensions (channel length and diameter) of SiNWT channel are shrinking down, electrical and temperature characteristics of SiNWTs should be affected, thereby degrading transistor performance [18].…”

Section: Introductionmentioning

confidence: 99%

Characterization of silicon nanowire transistor

et al. 2019

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This paper analyses the temperature sensitivity of Silicon Nanowire Transistor (SiNWT) depends on the diameter (D.ch) of channel. In addition, it also investigates the possibility of utilizing SiNWT as a Nano-temperature sensor. The MuGFET simulation tool has been utilized to conduct a comprehensive simulation to evaluate both electrical and temperature characteristics of SiNWT. Current-voltage characteristics with different values of temperature and with a varying diameter of the Nano wire channel (D.ch = 80, 40, 20 and 10 nm), were simulated. Diode operating mode connection of the transistor is suggested for measuring the temperature sensitivity of SiNWT. As simulation results demonstrated, the best temperature sensitivity was occurred at lower temperature with increasing the channel diameter. We also illustrate the impact of varying temperature and channel diameter on electrical characteristics of SiNWT including, Subthreshold Swing (SS), Threshold voltage (V.th), and Drain-induced barrier lowering (DIBL), which were proportionally increased with the operating temperature.

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High Performance GAA SNWT with a Triangular Cross Section: Simulation and Experiments

Cited by 6 publications

References 15 publications

The Effect of Nanowire Gap for Silicon Nanowire Transistor to the Current-Voltage (I-Vds)

The Effect of Nanowire Gap for Silicon Nanowire Transistor to the Current-Voltage (I-Vds)

Single step fabrication of Silicon resistors on SOI substrate used as Thermistors

Characterization of silicon nanowire transistor

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