High-Performance High-$k$$\hbox{Y}_{2}\hbox{O}_{3}$ SONOS-Type Flash Memory

Pan, Tung-Ming; Yeh, Wen-Wei

doi:10.1109/ted.2008.927401

Cited by 24 publications

(7 citation statements)

References 26 publications

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“…Pan et al , proposed a novel high -k Y 2 O 3 SONOS-type flash memory in 2008 [43]. Schematic representation of flash memory cell structure is shown in Figure 8.…”

Section: Recent Developmentsmentioning

confidence: 99%

Review on Non-Volatile Memory with High-k Dielectrics: Flash for Generation Beyond 32 nm

et al. 2014

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Flash memory is the most widely used non-volatile memory device nowadays. In order to keep up with the demand for increased memory capacities, flash memory has been continuously scaled to smaller and smaller dimensions. The main benefits of down-scaling cell size and increasing integration are that they enable lower manufacturing cost as well as higher performance. Charge trapping memory is regarded as one of the most promising flash memory technologies as further down-scaling continues. In addition, more and more exploration is investigated with high-k dielectrics implemented in the charge trapping memory. The paper reviews the advanced research status concerning charge trapping memory with high-k dielectrics for the performance improvement. Application of high-k dielectric as charge trapping layer, blocking layer, and tunneling layer is comprehensively discussed accordingly.

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“…Pan et al , proposed a novel high -k Y 2 O 3 SONOS-type flash memory in 2008 [43]. Schematic representation of flash memory cell structure is shown in Figure 8.…”

Section: Recent Developmentsmentioning

confidence: 99%

Review on Non-Volatile Memory with High-k Dielectrics: Flash for Generation Beyond 32 nm

et al. 2014

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“…Various high-j dielectrics have been widely investigated as CTL, such as HfO 2 , HfAlO, ZrO 2 , and Y 2 O 3 . [4][5][6][7] In our research, we will investigate the memory characteristics of metal-Al 2 O 3 -high-j dielectric materials-SiO 2 -p-type Si (MAHOS) structures with aluminum as metal gate electrode, Al 2 O 3 as blocking oxide (BO), 1, 8 and HfO 2 /Al 2 O 3 nanolaminates (NL) as CTL.…”

Section: Introductionmentioning

confidence: 99%

Energy band alignments of Al2O3–HfO2/Al2O3 nanolaminates–SiO2–p-type Si structures

Rifai

Maikap

Nakamura

2015

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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“…As an important branch, the metals [14][15][16][17] or oxides [18][19][20] nanocrystals as storage media were considered to be an effective method for improving the memory performance. Furthermore, various high-k dielectrics, such as ZrO 2 , 21) HfO 2 , 22) and Y 2 O 3 23) have been employed instead of conventional Si 3 N 4 to acquire lower operating voltage and higher carrier capture efficiency. 24) Particularly, the ternary oxides as charge trapping layer (CTL) can improve the program/erase speed and retention characteristics because of the high trap density and suitable energy band alignment.…”

mentioning

confidence: 99%

Improved memory characteristics for nonvolatile memory by using a double-potential well charge trapping layer

Tang

Geng

et al. 2019

Appl. Phys. Express

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A memory capacitor incorporating a designed ZrxSi1-xO2 trapping layer with a double-potential well bandgap is fabricated and investigated. Compared to single potential well and flat energy band, the double-potential well improves memory characteristics, and a faster program time of 9 × 10−6 s at +6 V flat band voltage shift, a lower charge loss of 3.6% at 200 °C up to 104 s, and a wider charge loss temperature insensitive range of 20 °C–134 °C can be obtained. The results indicate that the double-potential well bandgap is an appealing energy band structure for future nonvolatile memory applications.

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High-Performance High-$k$$\hbox{Y}_{2}\hbox{O}_{3}$ SONOS-Type Flash Memory

Cited by 24 publications

References 26 publications

Review on Non-Volatile Memory with High-k Dielectrics: Flash for Generation Beyond 32 nm

Review on Non-Volatile Memory with High-k Dielectrics: Flash for Generation Beyond 32 nm

Energy band alignments of Al2O3–HfO2/Al2O3 nanolaminates–SiO2–p-type Si structures

Improved memory characteristics for nonvolatile memory by using a double-potential well charge trapping layer

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