High-performance In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As HFET compatible with optical-detector integration

Harrang, J.P.; Daniels, R. R.; Fuji, Hiroshi; Griem, H.T.; Ray, Sayan Kumar

doi:10.1109/55.79557

Cited by 9 publications

(1 citation statement)

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“…INTRODUCTION N recent years, there has been considerable interest in developing new InP/InGaAs based hetero-junction insulated gate field effect transistor (HICFET) technologies for microwave and photonic applications [ l], [2]. Although successful X-band operation of InP Metal-Insulator-Semiconductor (M1S)FET's has been demonstrated as early as 1983 [3], development of MIS and heterostructure devices using dielectrics, such as SIN,, has been hampered by a large density of traps at the InP/insulator interface that are hard to control [4].…”

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confidence: 99%

Performance of interface engineered SiN_x/ICL/InP/In/sub 0.53/Ga/sub 0.47/As/InP doped channel HIGFET's

Sundararaman

Currie

1995

IEEE Electron Device Lett.

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SiN,AnPIInGaAs doped channel passivated heterojunction insulated gate field effect transistors (HIGFET's) have been fabricated for the first time using an improved In-S interface control layer (ICL). The insulated gate HIGFET's exhibit very low gate leakage (10 nA @ VGS = k5 V) and I~s ( s a t ) of 250 mA/mm. The doped channel improves the DC characteristics and the HIGFET's show transconductance of 140-150 m S / m ( L , = 2 pm), f t of 5-6 GHz ( L , = 3 pm), and power gain of 14.2 dB at 3 GHz. The ICL HIGFET technology is promising for high frequency applications.

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confidence: 99%

Performance of interface engineered SiN_x/ICL/InP/In/sub 0.53/Ga/sub 0.47/As/InP doped channel HIGFET's

Sundararaman

Currie

1995

IEEE Electron Device Lett.

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Photodetectors and OEIC Receivers

Mun¹

1994

Optoelectronic Integration: Physics, Technology and Applications

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A universal large/small signal 3-terminal FET model using a nonquasistatic charge-based approach

Daniels

Yang

Harrang

1993

IEEE Trans. Electron Devices

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High-performance In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As HFET compatible with optical-detector integration

Cited by 9 publications

References 5 publications

Performance of interface engineered SiN_x/ICL/InP/In/sub 0.53/Ga/sub 0.47/As/InP doped channel HIGFET's

Performance of interface engineered SiN_x/ICL/InP/In/sub 0.53/Ga/sub 0.47/As/InP doped channel HIGFET's

Photodetectors and OEIC Receivers

A universal large/small signal 3-terminal FET model using a nonquasistatic charge-based approach

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High-performance In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As HFET compatible with optical-detector integration

Cited by 9 publications

References 5 publications

Performance of interface engineered SiNx/ICL/InP/In/sub 0.53/Ga/sub 0.47/As/InP doped channel HIGFET's

Performance of interface engineered SiNx/ICL/InP/In/sub 0.53/Ga/sub 0.47/As/InP doped channel HIGFET's

Photodetectors and OEIC Receivers

A universal large/small signal 3-terminal FET model using a nonquasistatic charge-based approach

Contact Info

Product

Resources

About

Performance of interface engineered SiN_x/ICL/InP/In/sub 0.53/Ga/sub 0.47/As/InP doped channel HIGFET's

Performance of interface engineered SiN_x/ICL/InP/In/sub 0.53/Ga/sub 0.47/As/InP doped channel HIGFET's