High performance light emitting transistors

Abstract

Finite difference time domain analysis of the light extraction efficiency in organic light-emitting field-effect transistors J. Appl. Phys.

Organic light emitting complementary inverters

“…source and drain electrodes was 19 m and the channel width was 1000 m. All electrical and optical measurements were carried out in nitrogen atmosphere at Ͻ1.0 ppm oxygen; more details are presented in our previous publications. 7,8 Figures 2͑a͒ and 2͑c͒ show the electrical output characteristics of the LEFET in p-and n-bias corresponding to negative and positive gate voltages respectively. In p-type voltage bias, the transistor is biased negatively and the drain current was modulated with the applied gate voltage.…”

“…This value is much lower compared to our previously reported LEFET fabricated using SY. 7,8 We consider that there are two major factors limiting the efficiency of our device. The first is poor charge capture to form an exciton, due to negative polarons being concentrated in the NDI and positive polarons in the SY.…”

Conjugated polyelectrolytes for organic light emitting transistors

“…Efficient injection of both carriers has been accomplished by using electrodes made from low and high work function WF metals. 4,7,17 This choice of metals arises from the contact properties at the organic semiconductor/ metal interfaces, which limit carrier injection. Low WF metals such as Ca ͑Ref.…”

“…19 As the emissive layer, we employed a phenyl-substituted poly͑para-phenylene vinylene͒ copolymer ͑superyellow; SY͒. 7,17 CPE function was tested within LEFET devices with the architecture shown in Fig. 1͑b͒: Si/ SiO 2 / PBTTT-C14/ SY/ PFN + BIm 4 − / Ag.…”

“…This analysis has been described in more detail previously. 17 The width of the emission area was determined by imaging the light emission zone by optical microscope attached with a digital camera. The image was analyzed by taking an integrating profile across the image channel region.…”