Organic light emitting complementary inverters

Namdas, Ebinazar B.; Samuel, Ifor D. W.; Shukla, Deepak; Meyer, D.; Sun, Yanming; Hsu, Ben B. Y.; Moses, D.; Heeger, Alan J.

doi:10.1063/1.3293293

Cited by 31 publications

(19 citation statements)

References 21 publications

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“…PPVs have been widely used in the manufacture of organic light‐emitting diodes, specifically as light‐emitting active layers . PPVs have also been used in organic field‐effect transistors and organic solar cells …”

Section: Introductionmentioning

confidence: 99%

“…PPVs have been widely used in the manufacture of organic light-emitting diodes, specifically as light-emitting active layers. [3][4][5][6][7] PPVs have also been used in organic field-effect transistors 8,9 and organic solar cells. [10][11][12] Historically, PAzMs have been associated with serious problems concerning their processability from the point of view of their solubility in common solvents 1 which much affect their technological applications.…”

Section: Introductionmentioning

confidence: 99%

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New cardo silylated poly(azomethine)s containing 9,9′‐diphenylfluorene units as materials with Brønsted acid‐dependent fluorescence

Hauyon

Garrido‐Gatica

Sobarzo

et al. 2019

Polymer International

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Aromatic poly(azomethine)s have been studied due to their attractive properties such as high thermal stability, semiconducting behavior and the ability to coordinate species with their imine units (CN). In this paper, the synthesis and characterization of two novel silylated poly(azomethine)s containing cardo units are reported. These materials were highly soluble in organic solvents such as chloroform and m‐cresol and were thermally stable, and PAzMC1 exhibited a high glass transition temperature value (287 °C), while that for PAzMC2 was not observed. UV–visible spectrophotometry revealed absorption bands related to the aromatic backbone of both PAzMCs, 300–285 nm in tetrahydrofuran and 310–301 nm in dimethylsulfoxide, and bands attributed to the conjugated imine unit at around 350 nm. In order to investigate the phenomenon of the emission of fluorescence promoted by dopant agents with regard to potential optoelectronic applications, the materials were doped with H2SO4 and their optical and electrochemical properties investigated. Thus, the absorption band of the imine group was suppressed due to the nitrogen atoms being protonated. Fluorescence spectroscopy analysis developed in dilute solutions of polymers showed no emission from the undoped polymers, whereas the acid‐doped species emitted fluorescence in the UV and violet regions (322 nm). Cyclic voltammetry measurements were carried out and HOMO–LUMO energies were estimated. This study provides a starting point for the development of new poly(azomethine)s with doping‐dependent emission. © 2019 Society of Chemical Industry

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

New cardo silylated poly(azomethine)s containing 9,9′‐diphenylfluorene units as materials with Brønsted acid‐dependent fluorescence

Hauyon

Garrido‐Gatica

Sobarzo

et al. 2019

Polymer International

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“…In LEFETs, however, achieving balanced electron and hole transport and hence efficient electron-hole recombination is particularly challenging. Various device architectures, such as single layer LEFETs, [1][2][3][4]12,17,[19][20][21][22]23] bilayer LEFETs, [5][6] trilayer OLETs, [7,18] optoelectronic gate-LEFETs (OEG-LEFETs), [8] carbon nanotube enabled vertical organic light-emitting transistors (CN-VOLETs), [9] and rib-waveguide distributed feedback Bragg LEFETs [10] have been successfully demonstrated. Since both holes and electrons are necessary for electroluminescence, an ambipolar material that can sustain electron and hole currents is desirable.…”

Section: Doi: 101002/adma201103513mentioning

confidence: 97%

Control of Efficiency, Brightness, and Recombination Zone in Light‐Emitting Field Effect Transistors

et al. 2012

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The split-gate light emitting field effect transistors (SG-LEFETs) demonstrate a new strategy for ambipolar LEFETs to achieve high brightness and efficiency simultaneously. The SG architecture forces largest quantity of opposite charges on Gate 1 and Gate 2 area to meet in the center of the channel. By actively and independently controlling current injection from separated gate electrodes within transporting channel, high brightness can be obtained in the largest injection current regime with highest efficiency.

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“…In contract, one can find fewer n ‐type organic semiconductor materials [see some recent reviews for organic field‐effect transistor (FETs)] than p ‐type organic semiconductor materials (Table and Figure ) . This renders novel and innovative electron‐transporting materials quite desirable as balanced charge injection is a major requirement for many LET devices.…”

Section: Let Materialsmentioning

confidence: 99%

Organic Light‐Emitting Transistors: Advances and Perspectives

Chaudhry

Muhieddine

Wawrzinek

et al. 2019

Adv Funct Materials

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The rapid development of charge transporting and light-emitting organic materials in the last decades has advanced device performance, highlighting the high potential of light-emitting transistors (LETs). Demonstrated for the first time over 15 years ago, LETs have transformed from an optoelectronic curiosity to a serious competitor in the race for cheaper and more efficient displays, also showing promise for injection lasers. Thus, what is an LET, how does it work, and what are the current challenges for its integration into mainstream technologies? Herein, some light is shed on these questions. This work also provides the fundamental working principle of LETs, materials that have been used, and device physics and architectures involved in the progression of LET technology. The state-of-the-art development of LETs is also explored as prospect avenues for the future of research and applications in this area.

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Organic light emitting complementary inverters

Cited by 31 publications

References 21 publications

New cardo silylated poly(azomethine)s containing 9,9′‐diphenylfluorene units as materials with Brønsted acid‐dependent fluorescence

New cardo silylated poly(azomethine)s containing 9,9′‐diphenylfluorene units as materials with Brønsted acid‐dependent fluorescence

Control of Efficiency, Brightness, and Recombination Zone in Light‐Emitting Field Effect Transistors

Organic Light‐Emitting Transistors: Advances and Perspectives

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