2017
DOI: 10.1016/j.matlet.2017.04.077
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High performance near infrared photodetector based on cubic crystal structure SnS thin film on a glass substrate

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Cited by 67 publications
(21 citation statements)
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“…The performance of the SnS/RGO hybrid nanosheets photodetector in comparison with previously reported large-size SnS lm based devices is summarized in Table 1. It is clear that the key parameters of our device are much higher than that of SnS lm based large-size photodetectors, [12][13][14][15][16][17] and are also close to that of single SnS nanoribbon/nanosheet based complex micron-size photodetectors. 11,[18][19][20][21][22] The enhanced photoresponse may be attributed to several reasons.…”
Section: 28mentioning
confidence: 56%
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“…The performance of the SnS/RGO hybrid nanosheets photodetector in comparison with previously reported large-size SnS lm based devices is summarized in Table 1. It is clear that the key parameters of our device are much higher than that of SnS lm based large-size photodetectors, [12][13][14][15][16][17] and are also close to that of single SnS nanoribbon/nanosheet based complex micron-size photodetectors. 11,[18][19][20][21][22] The enhanced photoresponse may be attributed to several reasons.…”
Section: 28mentioning
confidence: 56%
“…Another kind of micro-size single SnS nanoribbon/ nanosheet based photodetectors, having also been reported by several groups exhibit relatively high photoresponsivity above the level of A W À1 . [17][18][19][20][21][22] But such single SnS nanoribbon/ nanosheet based photodetectors are on the micron scales and their fabrication must undergo extremely complex and precise processes, which is not suitable for large-scale applications. Nevertheless, all of these reports show that SnS nanostructures are good candidates for high performance photodetectors.…”
mentioning
confidence: 99%
“…In parallel, multiple studies of potential applications have explored the use of this cubic phase of monochalcogenides in solar cells, [7] for thermoelectric conversion [8] and as a high performance near infrared photodetector for SnS [9,10] and for SnSe. [6] These studies demonstrate the breadth of potential applications and the usability of this novel cubic phase in cases where the large band gap semiconducting property and nanoscale structures are valuable advantages in next generation devices.…”
Section: Introductionmentioning
confidence: 99%
“…While ultraviolet (UV) photodetectors based on ZnO nanowires and near-infrared (NIR) photodetectors based on SnS nanoflakes have shown promise for integration with glass owing to their high photosensitivity, low-temperature growth, and good stability, these photodetectors are power hungry, area inefficient, and limited in speed. 1,2 Recently, layered twodimensional (2D) van der Waals materials, particularly the semiconducting transition metal dichalcogenides (TMDCs) with the general formula of MX 2 , where M stands for transition metals (e.g., Mo, W, etc.) and X stands for chalcogens (S, Se, and Te), have become attractive to realize ultra-thin and ultrasensitive photodetectors owing to their indirect to direct band gap transition at the monolayer limit.…”
mentioning
confidence: 99%
“…Furthermore, making these photodetectors ultra-low-power will allow their deployment in resource-constrained and inaccessible locations that are deprived of continuous sources of electrical energy. While ultraviolet (UV) photodetectors based on ZnO nanowires and near-infrared (NIR) photodetectors based on SnS nanoflakes have shown promise for integration with glass owing to their high photosensitivity, low-temperature growth, and good stability, these photodetectors are power hungry, area inefficient, and limited in speed. , Recently, layered two-dimensional (2D) van der Waals materials, particularly the semiconducting transition metal dichalcogenides (TMDCs) with the general formula of MX 2 , where M stands for transition metals ( e . g ., Mo, W, etc. )…”
mentioning
confidence: 99%