High-Performance Pentacene-Based Thin-Film Transistors and Inverters With Solution-Processed Barium Titanate Insulators

Wei, Chia-Yu; Kuo, Shu-Hao; Huang, Wen-Chieh; Hung, Yu-Ming; Yang, Cheng‐San; Adriyanto, Feri; Wang, Yeong-Her

doi:10.1109/ted.2011.2174459

Cited by 14 publications

(5 citation statements)

References 28 publications

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“…To date, there have been only a few reports on OFET-based temperature sensors. ,− Table S1 in the Supporting Information summarizes the recently reported temperature sensors fabricated with various types of temperature-sensitive materials on different platforms and their properties. Attempts have been made for fabrication of OFETs using barium titanate (BaTiO 3 ) (BTO) as a dielectric material without demonstration of temperature-sensing capabilities. − Resistive-type temperature sensors are popular due to the observed large changes in their resistance with temperature variation. However, the response time was found to be higher in many cases. ,, Highly sensitive ultraflexible resistive-type temperature sensors using acrylate copolymers and graphite as sensing materials are used for the fabrication of temperature sensors with a response time of 100 ms within the temperature variation of 0.1 °C at 33 °C with a measurement precision of 20 mK .…”

Section: Introductionmentioning

confidence: 99%

Organic Field-Effect Transistor-Based Ultrafast, Flexible, Physiological-Temperature Sensors with Hexagonal Barium Titanate Nanocrystals in Amorphous Matrix as Sensing Material

Mandal

Banerjee

Roy

et al. 2018

ACS Appl. Mater. Interfaces

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Organic field-effect transistors (OFETs) with hexagonal barium titanate nanocrystals (h-BTNCs) in amorphous matrix as one of the bilayer dielectric systems have been fabricated on a highly flexible 10 μm thick poly(ethylene terephthalate) substrate. The device current and mobility remain constant up to a bending radius of 4 mm, which makes the substrate suitable for wearable e-skin applications. h-BTNC films are found to be highly temperature-sensitive, and the OFETs designed based on this material showed ultraprecision measurement (∼4.3 mK), low power (∼1 μW at 1.2 V operating voltage), and ultrafast response (∼24 ms) in sensing temperature over a range of 20−45 °C continuously. The sensors are highly stable around body temperature and work at various extreme conditions, such as under water and in solutions of different pH values and various salt concentrations. These properties make this sensor unique and highly suitable for various healthcare and other applications, wherein a small variation of temperature around this temperature range is required to be measured at an ultrahigh speed.

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Section: Introductionmentioning

confidence: 99%

Organic Field-Effect Transistor-Based Ultrafast, Flexible, Physiological-Temperature Sensors with Hexagonal Barium Titanate Nanocrystals in Amorphous Matrix as Sensing Material

Mandal

Banerjee

Roy

et al. 2018

ACS Appl. Mater. Interfaces

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“…The conjugated organic semiconductor that forms the active TFT layer must meet a significant number of requirements, and to date, more than 700 different materials have been evaluated for this purpose . Pentacene was one of the first and remains among the most popular small-molecule semiconductors for organic TFTs, because of its large carrier mobility. , Electronic systems that have been successfully demonstrated using pentacene TFTs include flexible active-matrix displays, sensor arrays, radio-frequency identification (RFID) tags, and microprocessors …”

Section: Introductionmentioning

confidence: 99%

Low-Voltage Organic Transistors Based on Tetraceno[2,3-b]thiophene: Contact Resistance and Air Stability

et al. 2015

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The small-molecule organic semiconductor tetraceno[2,3-b]thiophene has been synthesized through an environmentally friendly synthetic route, utilizing NaBH4, rather than Al/HgCl2, for the reduction of the quinone. Low-voltage organic thin-film transistors (TFTs) have been fabricated using tetraceno[2,3-b]thiophene and, for comparison, pentacene and anthradithiophene as the semiconductor. The tetraceno[2,3-b]thiophene TFTs have an effective field-effect mobility as large as 0.55 cm2 V–1 s–1 and a subthreshold swing of 0.13 V/decade. In addition, it has been found that the contact resistance of the tetraceno[2,3-b]thiophene TFTs is substantially smaller than that of the anthradithiophene TFTs and similar to that of the pentacene TFTs. The long-term air stability of TFTs based on all three semiconductors has been monitored over a period of 12 months. The initial charge-carrier mobility of the tetraceno[2,3-b]thiophene TFTs is ∼50% smaller than that of the pentacene TFTs, but as a result of the greater ionization potential and better air stability induced by the terminal thiophene ring condensed at the thiophene-b-bond, the tetraceno[2,3-b]thiophene TFTs outperform the pentacene TFTs after continuous exposure to ambient air for just 3 months.

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“…Using the polarizations of the incident and scattered light either parallel or perpendicular to each other, we calculated the intermolecular coupling energy (ω 1 ) that can be estimated by ω = ω 2 1 /2ω o , where ω o is the frequency of the intermolecular band and ω is the splitting frequency based on the coupled oscillator mode. The calculated coupling energy (ω 1 ) of 5.36 meV between two molecules of the TIPS pentacene-graphene composite (sample T2) semiconductors is illustrated in figure 4(b); it is higher than the 4.46 eV coupling energy of two pentacene molecules on PVP dielectric previously reported [23]. Raman spectroscopy is a powerful and nondestructive technique that can determine molecular packing conjugated backbone orientation and thin film uniformity (homogeneity) in small-molecule thin films, and can provide information on the reorganization energy (λ), which indicates the charge-phonon interaction inside the molecules.…”

Section: Resultsmentioning

confidence: 65%

“…V and λ were calculated from the polarized Raman spectra and UV-vis spectra experiments, as shown in figures 4(b) and (c), respectively. The estimated V and λ are 5.36 meV and 0.271 eV for the TIPS pentacene-graphene hybrid semiconductor, whereas for the as-vacuum-deposited pentacene molecules on the PVP dielectric the values are 4.46 meV and 0.2 eV [23].…”

Section: Resultsmentioning

confidence: 82%

Blending effect of 6,13-bis(triisopropylsilylethynyl) pentacene–graphene composite layers for flexible thin film transistors with a polymer gate dielectric

Basu¹,

Adriyanto²,

Wang³

2014

Nanotechnology

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Solution processible poly(4-vinylphenol) is employed as a transistor dielectric material for low cost processing on flexible substrates at low temperatures. A 6,13-bis (triisopropylsilylethynyl) (TIPS) pentacene-graphene hybrid semiconductor is drop cast to fabricate bottom-gate and bottom-contact field-effect transistor devices on flexible and glass substrates under an ambient air environment. A few layers of graphene flakes increase the area in the conduction channel, and form bridge connections between the crystalline regions of the semiconductor layer which can change the surface morphology of TIPS pentacene films. The TIPS pentacene-graphene hybrid semiconductor-based organic thin film transistors (OTFTs) cross-linked with a poly(4-vinylphenol) gate dielectric exhibit an effective field-effect mobility of 0.076 cm(2) V(-1) s(-1) and a threshold voltage of -0.7 V at V(gs) = -40 V. By contrast, typical TIPS pentacene shows four times lower mobility of 0.019 cm(2) V(-1) s(-1) and a threshold voltage of 5 V. The graphene/TIPS pentacene hybrids presented in this paper can enhance the electrical characteristics of OTFTs due to their high crystallinity, uniform large-grain distribution, and effective reduction of crystal misorientation of the organic semiconductor layer, as confirmed by x-ray diffraction spectroscopy, atomic force microscopy, and optical microscopy studies.

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High-Performance Pentacene-Based Thin-Film Transistors and Inverters With Solution-Processed Barium Titanate Insulators

Cited by 14 publications

References 28 publications

Organic Field-Effect Transistor-Based Ultrafast, Flexible, Physiological-Temperature Sensors with Hexagonal Barium Titanate Nanocrystals in Amorphous Matrix as Sensing Material

Organic Field-Effect Transistor-Based Ultrafast, Flexible, Physiological-Temperature Sensors with Hexagonal Barium Titanate Nanocrystals in Amorphous Matrix as Sensing Material

Low-Voltage Organic Transistors Based on Tetraceno[2,3-b]thiophene: Contact Resistance and Air Stability

Blending effect of 6,13-bis(triisopropylsilylethynyl) pentacene–graphene composite layers for flexible thin film transistors with a polymer gate dielectric

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