High Performance SoC Design Using Magnetic Logic and Memory

Abstract

Abstract.As the technolody node shrinks down to 90nm and below, high standby power becomes one of the major critical issues for CMOS highspeed computing circuits (e.g. logic and cache memory) due to the high leakage currents. A number of non-volatile storage technologies, such as FRAM, MRAM, PCRAM and RRAM, are under investigation to bring the non-volatility into the logic circuits and then eliminate completely the standby power issue. Thanks to its infinite endurance, high switching/sensing speed and easy integration on top of CMOS process, MRAM is considered as the most promising one. Numerous logic circuits based on MRAM technology have been proposed and prototyped in the last years. In this paper, we present an overview and current status of these logic circuits and discuss their potential applications in the future from both physical and architectural points of view.

Tunnel Junction with Perpendicular Magnetic Anisotropy: Status and Challenges

“…Logic-in-memory architecture built with hybrid MTJ/CMOS logic circuits, where memory devices are merged into a logic circuit, has drawn considerable attention recently [67,68]. This structure is configured with a write circuit for memory programming, a volatile logic block using MOS transistors, a sense amplifier (S.A) for logic result evaluation, and a non-volatile memory block (e.g., MRAM) for instant data storage.…”

Current-Induced Magnetic Switching for High-Performance Computing

“…One of the beneficial applications is the computing: the structural and technological limitations of conventional computing systems prevent them from reaching high frequency (~4 GHz) and limit power efficiency [23]. In this chapter, we describe an overview of the devices and circuits for high-performance computing, which are particularly based on current-induced magnetic switching.…”

Interface engineering of 9X stacked 3D NAND flash memory using hydrogen post-treatment annealing

“…NAND flash memories are one of the most popular nonvolatile memory products and are key components of portable electronics applications. Because they have the ability to retain more than one bit of data in a transistor at the off state and are 10 2 -10 3 times faster than hard disk drives (HDDs) [1][2][3][4], flash memory has become essential for mass storage in the memory hierarchy. As a usage of the mass storage application, NAND flash memory cells must be scaled down to increase the bit density.…”