High-performance solid-state photon-enhanced thermionic emission solar energy converters with graded bandgap window-layer

Abstract

To realize a high-performance solid-state photon-enhanced thermionic emission (SPETE) solar energy converter, in this study, a graded bandgap window layer is therefore adopted, throughout which the bandgap gradation is generated via the variation of Al composition in the A l x G a 1 − x As layer in the SPETE converter with a GaAs absorber. Based on one-dimension steady-state equation, an analytical model is formed in analyzing performance of the proposed device in our study. Theoretical simulation results indicate that not only are the losses of contact surface recombination being decreased via the bandgap-gradation-induced build-in electric field of the window layer, but also the photon-generated electrons are effectively collected, thereby improving the conversion efficiency. Moreover, the effect of bandgap energy of the contact surface and the width of the window layer on device performance is discussed. A trade-off of high-efficient SPETE converters is therefore realized between large contact surface bandgap and thin window layer width, to which the rationale lies in the improved process of electron collection facilitated by the enhanced build-in electric field rather than reducing the photon absorption in the window layer. Threshold values for barrier height at the emitting interface are presented to guarantee the ideal voltage-current characteristic. It is found that the threshold values of barrier increase with the increase in temperatures.

Retraction: Neodymium and Praseodymium Doped Perovskite Materials for Highly Stable CuInS2‐Hole‐Transport Layer‐Based Perovskite Solar Cells

“…In this way, an excessive effort has been made to design and produce state-of-the-art photovoltaic devices to convert this cheap and abundant energy to other applicable resources such as electricity. [3][4][5][6][7][8] In a common way, manipulation of the materials and their combination in different layers of the solar cell devices, especially in electron transport layer (ETL), has resulted in great upshots. [9][10][11] For instance, Ye and coworkers recently designed a bilayer ETL consisting of two tin oxide nanoparticle layers doped with different amounts of ammonium chloride to tune the band level at the corresponding interface, leading to reduced charge recombination, improved electron transfer, and lower voltage loss.…”

Exploring n‐type SiC film with ultralow work function Cs coating surface for solar cell anode

“…38,39 The Model 17 with three Cs atoms, respectively, located at T Si1 , B Si2 0 , H 1 sites achieves the lowest work function (0.92 eV), which is extremely approaching to the work function of P-doped diamond films (0.9 eV). 12 Based on the results of Yang et al, 2 the maximum conversion efficiency of PETE devices with anode material of 0.92 eV can reach 30%. These results inspirit us to further explore the feasibility of 3C-SiC material as the anode material candidate of PETE devices.…”

“…The PETE solar converters own a vacuum-gap parallel-plate structure, splitting by a semiconductor cathode, a vacuum gap and a semiconductor or metal anode. 2,3 The working mechanism of PETE devices can be described as a photoelectric emission process. The cathode absorbs solar light from a solar concentrator and excites photoelectrons in the conduction band.…”

“…The PETE method can take full advantage of per‐photon energy of shortwave radiation and the accessible thermal energy induced by long‐wave radiation. The PETE solar converters own a vacuum‐gap parallel‐plate structure, splitting by a semiconductor cathode, a vacuum gap and a semiconductor or metal anode 2,3 . The working mechanism of PETE devices can be described as a photoelectric emission process.…”

Theoretical Analysis of InGaN Solar Energy Converters Based on Photon-Enhanced Thermionic Emission

“…Regarding the selection of cathode materials, previous studies have shown that III-V semiconductors have good PETE properties but are concentrated on GaAs-based materials [14][15][16][17]. Both GaN and InN have been applied to PETE converter cathodes, while cathodes based on InGaN ternary compounds have not yet been attempted [7,18].…”