1989
DOI: 10.1109/16.40970
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High-performance TFTs fabricated by XeCl excimer laser annealing of hydrogenated amorphous-silicon film

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Cited by 288 publications
(76 citation statements)
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“…Pulsed laser induced crystallization of silicon films has been precisely investigated and widely applied to fabrication of polycrystalline silicon thin film transistors (poly-Si TFTs) [4][5][6][7][8][9][10]. The electrical and structural properties of polycrystalline silicon (poly-Si) thin films formed by pulsed laser irradiation have been reported.…”
Section: Introductionmentioning
confidence: 99%
“…Pulsed laser induced crystallization of silicon films has been precisely investigated and widely applied to fabrication of polycrystalline silicon thin film transistors (poly-Si TFTs) [4][5][6][7][8][9][10]. The electrical and structural properties of polycrystalline silicon (poly-Si) thin films formed by pulsed laser irradiation have been reported.…”
Section: Introductionmentioning
confidence: 99%
“…Laser crystallization processes using pulsed excimer lasers have been widely used for the mass production of formation of poly-Si films at a low processing temperature because laserinduced rapid and local heating achieve crystallization of silicon films with a low heating energy [3,4]. However, there are serious problems of a low lasing emitting efficiency of 1%, low gas lifetime, and high running costs in operation of pulsed excimer laser.…”
Section: Introductionmentioning
confidence: 99%
“…Many technologies have been reported for the formation of polycrystalline silicon films at low processing temperature [1][2][3][4][5][6][7][8][9][10]. Lateral crystalline grain growth is very important for the formation of large crystalline grain in thin films.…”
Section: Introductionmentioning
confidence: 99%